High-Voltage NPN Transistor
Surface Mount
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
5.0
Unit
Vdc
Vdc
Vdc
mAdc
500
Rating
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
R JA
PD
PD
Symbol Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
MMBTA42=1D
Device Marking
Characteristics Symbol Min Max Unit
Electrical Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=100 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0)
Base Cutoff Current (VCB=200 Vdc, IE=0)
Emitter Cutoff Current VEB=3V, IC=0
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
0.25
0.1
Vdc
Vdc
Vdc
Adc
Adc
Off Characteristics
WEITRON
http://www.weitron,com.tw
MMBTA42
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
(TA=25 C Unless Otherwise noted)
300
300
5.0
-
-
-
-
-
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
1
2
3
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 5 Vdc, f=130MHz) fT-50 -MHz
DC Current Gain
(IC= 1.0 mAdc, VCE=10Vdc)
(IC= 10 mAdc, VCE= 10Vdc)
(IC= 30 mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2.0 mAdc)
Base-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2.0 mAdc)
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
-
Vdc
Vdc
25
100
25
-
200
-
On Characteristics
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Unit
Min Max
0.5
0.9
-
-
(3)
(3)
MMBTA42 WE IT R ON
WEITRON
http://www.weitron.com.tw
MMBTA42
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
80
70
60
50
40
30
20
10
Ic, COLLECTOR CURRENT (mA)
Figure ,3 Current-Gain-Bandwidth
Tj=25 C
VEC=20V
f=20MHz
fT, CURRENT-GAIN-BANDWIDTH (MHz)
IC, COLLECTOR CURRENT (mA)
Figure,2 "On"Voltages
0.1 1.0 10 100
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
VCE(sat)@25 C, ICIB = 10
VCE(sat)@125 C, ICIB =10
VCE(sat)@ -55 C, ICIB=10
VBE(sat)@25 C, ICIB = 10
VBE(sat)@125 C, ICIB =10
VBE(sat)@ -55 C, ICIB =10
VBE(on)@25 C, VCE = 10V
VBE(on)@125 C, VCE = 10V
VBE(on)@-55 C, VCE = 10V
120
100
80
60
40
20
0
Tj=+125 C
25 C
-55 C
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure ,1 DC Current Gain
hFE, DC CURRENT GAIN
Typical Characteristics
WEITRON
http://www.weitron.com.tw
WE IT R ON
WEITRON
http://www.weitron.com.tw
MMBTA42
A
B
D
EG
M
L
H
J
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
K
C
SOT-23
SOT-23 Package Outline Dimension
