TGA4512-SM Ka-Band Driver Amplifier Applications * * Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features * * * * * * * Functional Block Diagram 12 Frequency Range: 28 - 32 GHz Power: 17 dBm Psat, 16 dBm P1dB Gain: 14.5 dB TOI: 24dBm NF: 7.5 dB Bias: Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical Package Dimensions: 3.0 x 3.0 x 0.85 mm 11 1 9 2 8 3 7 4 General Description 10 5 6 Pin Configuration The TriQuint TGA4512-SM is a Ka-Band Packaged Driver Amplifier. The TGA4512-SM operates from 2832 GHz and is designed using TriQuint's power pHEMT production process. The TGA4512-SM typically provides 17 dBm of saturated output power with small signal gain of 14.5 dB. Pin # Symbol 1, 3, 4, 5, 7, 9, 10, 12 2 6 8 11 N/C RF IN Vg RF OUT Vd The TGA4512-SM is available in a low-cost, surface mount 12 lead 3x3 QFN package and is ideally suited for Ka-band VSAT Ground Terminal, and Point-to-Point Radio. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. TGA4512-SM ECCN 3A001.b.2.d Description Ka-band Driver Amplifier Standard T/R size = 1000 pieces on a 7" reel. Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 1 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50,T = 25C Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +8 V -5 to 0 V 100 mA -0.6 to 3.5 0.65 W 18 dBm 200 oC 260 oC -40 to 150 Vd Id Id_drive (Under RF Drive) Vg Min Typical Max Units 6 80 V mA 100 mA -0.45 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical. Parameter Min Operational Frequency Range Gain Input Return Loss Output Return Loss Output Power @ Saturation Output Power @ 1dB Gain Compression Output TOI Noise Figure Gain Temperature Coefficient Power Temperature Coefficient Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. 28 11 14 - 2 of 13 - Typical 14.5 -12 -10 17 16 24 7.5 -0.38 -0.01 Max Units 32 GHz dB dB dB dBm dBm dBm dB dB/C dBm/C Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, JC, measured to back of package Tbase = 85 C Tbase = 85 C, Vd = 6 V, Id = 80 mA, Pdiss = 0.48 W Tbase = 85 C, Vd = 6 V, Id = 100 mA, Pout = 16.9 dBm, Pdiss = 0.55 W JC = 117.5 C/W Tch = 141 C Tm = 2.2 E+6 Hours Tch = 150 C Tm = 1 E+6 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm, (Hours) 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch, (C) Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Typical Performance Noise Figure vs. Frequency Gain, Return Loss vs. Frequency Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C 0 15 -5 14 -10 -15 Gain IRL ORL 12 -20 11 -25 10 -30 12 11 10 9 8 7 6 5 4 3 2 1 0 26 27 28 29 30 31 32 33 34 35 36 26 Frequency (GHz) Power vs. Frequency 27 28 29 30 31 Output Power (dBm) 31 33 34 35 36 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 32 33 34 130 125 120 115 110 105 100 95 90 85 80 75 70 <-- Power <-- Gain --> Id -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 Frequency (GHz) 2 4 6 Input Power (dBm) TOI vs. Frequency vs. Pout/Tone IM3 vs. Pout/Tone vs. Frequency Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C 25 24 23 22 21 Pout/Tone = 8dBm 20 Pout/Tone = 6dBm 19 18 17 16 15 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 0 -5 -10 IM3 (dBc) Output TOI (dBm) 30 Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C Power (dBm), Gain (dB) 32 29 Power, Gain, Id vs. Input Power @ 30 GHz Psat P1dB 26 28 Frequency (GHz) Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C 19 18 17 16 15 14 13 12 11 10 27 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. -15 -20 -25 28GHz 29GHz 30GHz 31GHz -30 -35 -40 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Frequency (GHz) Preliminary Data Sheet: Rev A Id (mA) 13 Noise Figure (dB) 16 Return Loss (dB) Gain (dB) Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C Pout/Tone (dBm) - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Typical Performance (cont.) Gain vs. Frequency vs. Vd Gain vs. Frequency vs. Id Vd = 4 - 7 V, Id = 60 mA, +25 0C 16 16 15 15 14 14 Gain (dB) Gain (dB) Vd = 4 - 7 V, Id = 60 mA, +25 0C 7V, 60mA 6V, 60mA 5V, 60mA 4V, 60mA 13 12 11 10 10 27 28 29 30 31 32 33 34 35 6V, 80mA 6V, 60mA 6V, 45mA 12 11 26 26 36 28 29 30 31 32 33 34 35 36 Frequency (GHz) Saturated Power vs. Frequency vs. Vd Saturated Power vs. Frequency vs. Id Vd = 6 V, Id = 45 - 80 mA, +25 0C Psat (dBm) 19 18 17 16 15 14 13 12 11 10 7V, 60mA 6V, 60mA 5V, 60mA 4V, 60mA 26 27 28 29 30 31 32 33 34 35 19 18 17 16 15 14 13 12 11 10 6V, 80mA 6V, 60mA 6V, 45mA 26 36 28 29 30 31 32 33 34 35 Frequency (GHz) Gain vs. Frequency vs. Temperature Psat vs. Frequency vs. Temperature -40C +25C +85C 27 28 29 30 31 32 33 34 35 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. 20 19 18 17 16 15 14 13 12 11 -40 C +25 C +85 C 26 36 27 28 29 30 31 32 33 34 Frequency (GHz) Frequency (GHz) Preliminary Data Sheet: Rev A 36 Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical Psat (dBm) 20 18 16 14 12 10 8 6 4 2 0 26 27 Frequency (GHz) Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical Gain (dB) 27 Frequency (GHz) Vd = 4 - 7 V, Id = 60 mA, +25 0C Psat (dBm) 13 - 5 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Application Circuit Vd = 6 V C1 100 pF 12 J1 RF IN 11 C3 1 uF 10 1 9 2 8 3 7 4 5 6 R1 10 Ohms C2 100 pF J2 RF OUT Vg = -0.45 V Typical C4 1 uF Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 80 mA. This will be ~ Vg = -0.45 V Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. Turn Vd to 0 V Turn Vg to 0 V - 6 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Pin Description 12 11 10 9 1 2 8 13 7 3 4 5 6 Pin Symbol Description 1, 3, 7, 9 2 4, 5, 10, 12 N/C RF IN N/C 6 Vg 8 RF OUT Vd No internal connection; must be grounded on PCB Input, matched to 50 ohms No internal connection. Can be grounded or left open Gate voltage. Bias network is required; see Application Circuit on page 11 as an example. Output, matched to 50 ohms Drain voltage. Bias network is required; see Application Circuit on page 11 as an example. Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 15 for suggested footprint. 11 13 GND Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 7 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Applications Information PC Board Layout Top RF layer is 0.008" thick Rogers RO4003, r = 3.38. Metal layers are 1-oz copper. Microstrip 50 line detail: width = 0.0175". The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA4512-SM Product Information page. Bill of Material Ref Des Value Description Manufacturer C1, C2 C3, C4 R1 100 pF 1 uF 10 Ohms Cap, 0402, 50V, 5%, NPO Cap, 0603, 50V, 5%, NPO Res, 0402, 1/16W, 5%, NPO various various various Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 8 of 13 - Part Number Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Mechanical Information Package Information and Dimensions All dimensions are in millimeters. Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 9 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier This package is lead-free/RoHS-compliant. The package base is copper alloy and the plating material on the leads is matte tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245 C reflow temperature) soldering processes. 19.0 The TGA4512-SM will be marked with the "4512" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the year the part was manufactured, the "WW" is the work week, and the "XXXX" is an auto-generated number. 21.5 Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .25 mm (.010"). Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the "Application Notes" section. Standard T/R size = 1000 pieces on a 7 x 0.5" reel. Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 10 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier CARRIER AND COVER TAPE DIMENSIONS Part Feature Cavity Length Width Depth Pitch Cavity to Perforation Length Direction Cavity to Perforation Width Direction Width Width Distance Between Centerline Cover Tape Carrier Tape Symbol Size (in) Size (mm) A0 B0 K0 P1 0.130 0.130 0.043 0.315 3.3 3.3 1.1 8.0 P2 0.079 2.0 F 0.217 5.5 C W 0.362 0.472 9.2 12.0 Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating: TBD Value: Passes TBD min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level TBD at +260 C convection reflow The part is rated Moisture Sensitivity Level TBD at 260C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free ECCN US Department of Commerce 3A001.b.2.d Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 11 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier Recommended Soldering Temperature Profile Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: info-networks@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 12 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA4512-SM Ka-Band Driver Amplifier TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright (c) 2012 TriQuint Semiconductor, Inc. All rights reserved. Preliminary Data Sheet: Rev A 04/26/12 (c) 2012 TriQuint Semiconductor, Inc. - 13 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)