1074166 - TriQuint Semiconductor

TGA4512-SM

Ka-Band Driver Amplifier

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Applications

• Ka-band VSAT Ground Terminal

• Point-to-Point Radio

QFN 3x3mm 12L

Product Features Functional Block Diagram

• Frequency Range: 28 – 32 GHz

• Power: 17 dBm Psat, 16 dBm P1dB

• Gain: 14.5 dB

• TOI: 24dBm

• NF: 7.5 dB

• Bias: Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical

• Package Dimensions: 3.0 x 3.0 x 0.85 mm

General Description Pin Configuration

The TriQuint TGA4512-SM is a Ka-Band Packaged

Driver Amplifier. The TGA4512-SM operates from 28-

32 GHz and is designed using TriQuint’s power pHEMT

production process.

The TGA4512-SM typically provides 17 dBm of

saturated output power with small signal gain of 14.5

dB.

The TGA4512-SM is available in a low-cost, surface

mount 12 lead 3x3 QFN package and is ideally suited for

Ka-band VSAT Ground Terminal, and Point-to-Point

Radio.

Lead-free and RoHS compliant

Evaluation Boards are available upon request.

Pin # Symbol

1, 3, 4, 5, 7, 9, 10, 12 N/C

2 RF IN

6 Vg

8 RF OUT

11 Vd

Ordering Information

Part No. ECCN Description

TGA4512-SM 3A001.b.2.d Ka-band Driver Amplifier

Standard T/R size = 1000 pieces on a 7” reel.

1

2

3

9

8

7

45 6

12 11 10

TGA4512-SM

Ka-Band Driver Amplifier

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Specifications

Absolute Maximum Ratings

Parameter Rating

Drain Voltage,Vd +8 V

Gate Voltage,Vg -5 to 0 V

Drain Current, Id 100 mA

Gate Current, Ig -0.6 to 3.5

Power Dissipation, Pdiss 0.65 W

RF Input Power, CW, 50Ω,T = 25ºC 18 dBm

Channel Temperature, Tch 200 oC

Mounting Temperature (30 Seconds) 260 oC

Storage Temperature -40 to 150

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter Min Typical Max Units

Vd 6 V

Id 80 mA

Id_drive (Under RF

Drive) 100 mA

Vg -0.45 V

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical.

Parameter Min Typical Max Units

Operational Frequency Range 28 32 GHz

Gain 11 14.5 dB

Input Return Loss -12 dB

Output Return Loss -10 dB

Output Power @ Saturation 14 17 dBm

Output Power @ 1dB Gain Compression 16 dBm

Output TOI 24 dBm

Noise Figure 7.5 dB

Gain Temperature Coefficient -0.38 dB/°C

Power Temperature Coefficient -0.01 dBm/°C

TGA4512-SM

Ka-Band Driver Amplifier

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Specifications (cont.)

Thermal and Reliability Information

Parameter Condition Rating

Thermal Resistance, θJC, measured to back of package Tbase = 85 °C θJC = 117.5 °C/W

Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 85 °C, Vd = 6 V, Id = 80 mA,

Pdiss = 0.48 W

Tch = 141 °C

Tm = 2.2 E+6 Hours

Channel Temperature (Tch), and Median Lifetime (Tm)

Under RF Drive

Tbase = 85 °C, Vd = 6 V, Id = 100

mA, Pout = 16.9 dBm, Pdiss = 0.55 W

Tch = 150 °C

Tm = 1 E+6 Hours

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

1.E+14

25 50 75 100 125 150 175 200

Median Lifetime, Tm, (Hours)

Channel T emperature, T ch, (°C)

Median Li f e t i m e (Tm ) vs . Channel Temperatur e (Tch)

FET3

TGA4512-SM

Ka-Band Driver Amplifier

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Typical Performance

-30

-25

-20

-15

-10

-5

0

10

11

12

13

14

15

16

26 27 28 29 30 31 32 33 34 35 36

Return Loss (dB)

Gain (dB)

Frequency (GHz)

Gain, Retu rn Lo ss vs. F requ enc y

Vd = 6 V, Id = 80 mA , V g = - 0 .4 5 V Typica l , +25 0C

Gain

IRL

ORL

0

1

2

3

4

5

6

7

8

9

10

11

12

26 27 28 29 30 31 32 33 34

Noise Figure (dB)

Frequency (GHz)

No ise Figu re vs. Freq uen cy

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25

0

C

10

11

12

13

14

15

16

17

18

19

26 27 28 29 30 31 32 33 34 35 36

Output Power (dBm)

Frequency (GHz)

Powe r v s. Fre quency

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25

0

C

Psat

P1dB

70

75

80

85

90

95

100

105

110

115

120

125

130

-6

-4

-2

0

2

4

6

8

10

12

14

16

18

-20-18-16-14-12-10 -8 -6 -4 -2 0 2 4 6

Id (mA)

Power (dBm), Gain (dB)

Input Power (dBm)

Power, Gain, Id vs. Input Power @ 30 GHz

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25 0C

<-- Power

<-- Gain

--> Id

15

16

17

18

19

20

21

22

23

24

25

27.5 28 28.5 29 29.5 30 30.5 31 31.5 32

Output TOI (dBm)

Frequency (GHz)

TOI vs. Frequency vs. Pout/Tone

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical, +25

0

C

-40

-35

-30

-25

-20

-15

-10

-5

0

0123456789101112131415

IM3 (dBc)

Pout/Tone (dBm)

IM3 vs. Pout/Tone vs. Frequency

Vd = 6 V , Id = 80 mA, Vg = -0.45 V Typical, +25

0

C

28GHz

29GHz

Pout/T one = 8dBm

30GHz

Pout/T one = 6dBm

31GHz

TGA4512-SM

Ka-Band Driver Amplifier

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Typical Performance (cont.)

10

11

12

13

14

15

16

26 27 28 29 30 31 32 33 34 35 36

Gain (dB)

Frequency (GHz)

G ain vs. F req uen cy vs. V d

Vd = 4 - 7 V, Id = 60 mA, +25

0

C

7V , 60mA

6V , 60mA

5V , 60mA

4V , 60mA

10

11

12

13

14

15

16

26 27 28 29 30 31 32 33 34 35 36

Gain (dB)

Frequency (GHz)

G ain vs. Fr eq uen cy vs. Id

Vd = 4 - 7 V, Id = 60 mA, +25 0C

6V , 80mA

6V , 60mA

6V , 45mA

10

11

12

13

14

15

16

17

18

19

26 27 28 29 30 31 32 33 34 35 36

Psat (dBm)

Frequency (G Hz)

Saturated Power vs. Frequency vs. Vd

Vd = 4 - 7 V, Id = 60 mA, +25

0

C

7V , 60mA

6V , 60mA

5V , 60mA

4V , 60mA

10

11

12

13

14

15

16

17

18

19

26 27 28 29 30 31 32 33 34 35 36

Psat (dBm)

Frequency (GHz)

Satu rated Pow er vs. F req uenc y vs. Id

Vd = 6 V, Id = 45 - 80 mA, +25 0C

6V , 80mA

6V , 60mA

6V , 45mA

0

2

4

6

8

10

12

14

16

18

20

26 27 28 29 30 31 32 33 34 35 36

Gain (dB)

Frequency (GHz)

Gain vs. Frequency vs. Temperature

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical

11

12

13

14

15

16

17

18

19

20

26 27 28 29 30 31 32 33 34

Psat (dBm)

Frequency (GHz)

Psat vs. Freq uency vs. Temp erature

Vd = 6 V, Id = 80 mA, Vg = -0.45 V Typical

-40C

-40 C

+25C

+25 C

+85C

+85 C

TGA4512-SM

Ka-Band Driver Amplifier

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Application Circuit

Bias-up Procedure Bias-down Procedure

Vg set to -1.5 V Turn off RF supply

Vd set to +6 V Reduce Vg to -1.5V. Ensure Id ~ 0 mA

Adjust Vg more positive until quiescent Id is 80 mA.

This will be ~ Vg = -0.45 V Turn Vd to 0 V

Apply RF signal to RF Input Turn Vg to 0 V

RF IN

Vd = 6 V

Vg = -0.45 V Typical

C2

10 Ohms

C1

1 uF

1

2

3

45 6

9

8

7

12 11 10

J1

RF OUT

J2

100 pF

C3

100 pF

C4

R1

TGA4512-SM

Ka-Band Driver Amplifier

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Pin Description

1

2

3

9

8

7

45 6

12 11 10

13

Pin Symbol Description

1, 3, 7, 9 N/C No internal connection; must be grounded on PCB

2 RF IN Input, matched to 50 ohms

4, 5, 10, 12 N/C No internal connection. Can be grounded or left open

6 Vg

Gate voltage. Bias network is required; see Application Circuit on page 11 as

an example.

8 RF OUT Output, matched to 50 ohms

11 Vd Drain voltage. Bias network is required; see Application Circuit on page 11 as

an example.

13 GND

Backside Paddle. Multiple vias should be employed to minimize inductance

and thermal resistance; see Mounting Configuration on page 15 for suggested

footprint.

TGA4512-SM

Ka-Band Driver Amplifier

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Applications Information

PC Board Layout

Top RF layer is 0.008” thick Rogers RO4003, єr = 3.38. Metal layers are 1-oz copper.

Microstrip 50 Ω line detail: width = 0.0175”.

The pad pattern shown has been developed and tested for optimized assembly at TriQuint

Semiconductor. The PCB land pattern has been developed to accommodate lead and

package tolerances. Since surface mount processes vary from company to company, careful

process development is recommended.

For further technical information, refer to the TGA4512-SM Product Information page.

Bill of Material

Ref Des Value Description Manufacturer Part Number

C1, C2 100 pF Cap, 0402, 50V, 5%, NPO various

C3, C4 1 uF Cap, 0603, 50V, 5%, NPO various

R1 10 Ohms Res, 0402, 1/16W, 5%, NPO various

TGA4512-SM

Ka-Band Driver Amplifier

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Mechanical Information

Package Information and Dimensions

All dimensions are in millimeters.

TGA4512-SM

Ka-Band Driver Amplifier

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This package is lead-free/RoHS-compliant. The package base is copper

alloy and the plating material on the leads is matte tin. It is compatible with

both lead-free (maximum 260 °C reflow temperature) and tin-lead

(maximum 245 °C reflow temperature) soldering processes.

The TGA4512-SM will be marked with the “4512” designator and a lot

code marked below the part designator. The “YY” represents the last two

digits of the year the part was manufactured, the “WW” is the work week,

and the “XXXX” is an auto-generated number.

19.0

21.5

Mechanical Information (cont.)

Mounting Configuration

All dimensions are in millimeters (inches).

Notes:

1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation.

2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .25 mm (.010”).

Tape and Reel Information

Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section.

Standard T/R size = 1000 pieces on a 7 x 0.5” reel.

TGA4512-SM

Ka-Band Driver Amplifier

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CARRIER AND COVER TAPE DIMENSIONS

Part Feature Symbol

Size (in) Size (mm)

Cavity Length A0 0.130 3.3

Width B0 0.130 3.3

Depth K0 0.043 1.1

Pitch P1 0.315 8.0

Distance Between Centerline Cavity to Perforation

Length Direction P2 0.079 2.0

Cavity to Perforation

Width Direction F 0.217 5.5

Cover Tape Width C 0.362 9.2

Carrier Tape Width W 0.472 12.0

Product Compliance Information

ESD Information

ESD Rating: TBD

Value: Passes ≥ TBD min.

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

Solderability

Compatible with the latest version of J-STD-020, Lead

free solder, 260°

This part is compliant with EU 2002/95/EC RoHS

directive (Restrictions on the Use of Certain Hazardous

Substances in Electrical and Electronic Equipment).

This product also has the following attributes:

• Lead Free

• Halogen Free (Chlorine, Bromine)

• Antimony Free

• TBBP-A (C15H12Br402) Free

• PFOS Free

• SVHC Free

MSL Rating

Level TBD at +260 °C convection reflow

The part is rated Moisture Sensitivity Level TBD at 260°C per

JEDEC standard IPC/JEDEC J-STD-020.

ECCN

US Department of Commerce 3A001.b.2.d

TGA4512-SM

Ka-Band Driver Amplifier

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Recommended Soldering Temperature Profile

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com Tel: +1.972.994.8465

Email: info-sales@tqs.com Fax: +1.972.994.8504

For technical questions an d application information:

Email: info-networks@tqs.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint

assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained

herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with

the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest

relevant information before placing orders for TriQuint products. The information contained herein or any use of such

information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property

rights, whether with regard to such information itself or anything described by such information.

®

TGA4512-SM

Ka-Band Driver Amplifier

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TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining

applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.