BFY 50 BFY 51 BY 52 SILICON PLANAR NPN MEDIUM-POWER AMPLIFIERS The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. ABSOLUTE MAXIMUM RATINGS BFY 50 | BFY 51 | BFY 52 Veso Collector-base voltage (I~ = 0} Voeo Collector-emitter voltage (Ig = 0) Vepo Emitter-base voltage (l = 0) le Collector current lem Collector peak current Prot Total power dissipation at Tamp 29C at Tease 25C Tsigs Ty Storage and junction temperature 80 Vv | 60 | 40 V 35 V 30v_ | 20V 6V ~ 1A 1A 0.8 W 5W -65 to 200 C MECHANICAL DATA Dimensions in mm 7/76 106 THERMAL DATA Rth ;case Fhermal resistance junction-case max 35 C/W Rth jamb Thermal resistance junction-ambient max 218 C/W ELECTRICAL CHARACTERISTICS (T.4.= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lepo Collector cutoff current (l_e = 0) for BFY 50 Vep= 60V 2 50] nA Vep= 60V Tease 100C 0.055 2.5; uA for BFY 51 Vep= 40V 2 50] nA Vep= 40V Tease 100C 0.055 2.5; UA for BFY 52 Veg= 30V 2 50| nA Vep= 30V Tease= 100C 0.055 2.5] pA lego Emitter cutoff current (Ic = Q) Vep= 5V 1 50 | nA Vep= 5V Tease= 100C 0.016 2.8] WA Vierycapo Collector-base breakdown voltage le = 100 pA (le =0) for BFY 50 80 Vv for BFY 51 60 Vv for BFY 52 40 Vv Veo gus) Collector-ernitter sustaining voltage le = 30 mA (lz =0) for BFY 50 35 Vv for BFY 51 30 Vv for BFY 52 20 Vv Vieryepo Emitter~base breakdown voltage le = 100 vA 6 Vv (le = 0) Vee Gat) Collector-emitter saturation voltage le = 150 mA Ig = 15MA for BFY 50 0.14 O02] V for BFY 51 and BFY 52 0.14 0.35}; V le =A ip =O.1A for BFY 50 0.7 1|/ Vv for BFY 51 and BFY 52 0.7 16/ V Vee (sat) Base-emitter saturation voltage le =150 mA Ig =15mMA 0.95 Vv le =1A Ip =O.1A 1.5 2/ Vv ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.! Unit hee * DC current gain for BFY 50 Ile =10mMA Vee= 6V 20 40 - lc = 150mMA Veg= 6V 30 55 IG =1A Vee= 6V 15 30 - for BFY 51 le =10mA Vee=6V 30 55 _ lc = 150 mMA VeEe= 6V 40 70 > Ic =1A Vee= 6V 15 40 _ for BFY 52 lo =10mMA Vee=6V 30 80 _ Ic = 150mA Vcee= 6V 60 130 - Ic=1A Vce= 6V 15 60 _ Hie Small signa! current gain Vece= 6V f=1 kHz le =1mA for BFY 51 30 42| - for BFY 52 30 84] ic =10mA for BFY 50 45 - for BFY 51 60 _ for BFY 52 120 - fy. Transition frequency Io =50mA Vep= 6V for BFY 50 j60 100 MHz for BFY 51 50=s: 110 MHz forBFY 52 [50 120 MHz CeBo Collector-base capacitance le =0 Veg= 12V = 1 MHz 7 12] pF hie Input impedance le =10mMA Veoe= 6V f =1kHz for BFY S50 180 2 for BFY 51 220 2 for BFY 52 400 a re Reverse voltage ratio le =10mA Vee= 6V fF =1 kHz for BFY 50 55x107 - for BFY 51 70x10 - for BFY 52 130x10 - Hoe Output admittance lo =10mA Vee= 6Y f =1kHz for BFY 50 30 Us for BEY 51 35 Us for BFY 52 70 Ms 108 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.) Unit ty Delay time le =150mMA Vec= 10V Ipi=15MA Vee=-2V 25 ns ty Rise time Ilo =150 MA Vec= 10V Igx=15MA Vee=-2V 30 ns ts Storage time leo = 150 MA Vec= 10V lei = -lgo= 15 MA for BFY 50 140 ns for BFY 51 160 ns for BFY 52 220 ns ty Fall time lc =150mMA_ Vec= 10V lg1=-lp2= 15 mA for BFY 50 and BFY 51 35 ns for BFY 52 40 ns *Pulsed: pulse duration = 300 us, duty cycle = 1% 109