28/11/08 DB90048
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Current Transfer Ratio
zHigh Isolation V oltage (5.3kVRMS ,7.5kVPK )
zAll electrical parameters 100% tested
zCustom electrical selections available
APPLICATIONS
zComputer terminals
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 80mA
Reverse Voltage 5V
Power Dissipation 100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 50V
Emitter-collector Voltage BVECO 5V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6 1.4
0.9
4N29, 4N30, 4N31, 4N32, 4N33
1
2
34
5
6
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 50mA
Reverse Current (IR)10μAV
R = 6V
Output Collector-emitter Breakdown (BVCEO)30 V I
C = 1mA (note 2)
Collector-base Breakdown (BVCBO)50 V I
C = 100μA
Emitter-collector Breakdown (BVECO)5 V I
E = 100μA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 10V
Coupled Collector Output Current ( IC ) (Note 2)
4N32, 4N33 50 mA 10mA IF , 10V VCE
4N29, 4N30 10 mA 10mA IF , 10V VCE
4N31 5 mA 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT)
4N29,4N30,4N32,4N33 1.0 V 8mA I F , 2mA IC
4N31 1.2 V 8mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Turn on Time ton 5 μsV
CC = 10V, IC= 50mA,
Output Turn off Time IF = 200mA ,
4N32, 4N33 toff 100 μs Pulse Width = 1ms
4N29, 4N30, 4N31 40 μs fig.1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
28/11/08
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC = 10V
IC = 50mA
IF = 200mA,
Pulse width = 1ms
Input
FIGURE 1
DB90048-AAS/A4
28/11/08
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
20
0
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward current IF (mA)
IF = 8mA
IC = 2mA
80
100
0
0.5
1.0
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
Ambient temperature TA ( °C )
IF = 10mA
VCE = 10V
0
10
Current Transfer Ratio vs.
Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
5mA
10mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
VCE = 10V
TA = 25°C
IF = 1mA
20
50mA TA = 25°C
50
5000
800
500
DB90048-AAS/A4