MIL SPECS cg o0o001e5 0001340 2 a NOTICE INCH-POUND OF VALIDATION MIL-S-19500/248A(ER) NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET TRANSISTOR, NPN, SILICON TYPES 2N2015, 2N2016 Military specification MIL-S-19500/248A(ER), dated 10 April 1963, with Amendment 2, dated 23 June 1982, has been reviewed and determined to be valid for use in acquisition. Custodian: Preparing Activity: Army - ER Army-ER Agent: DLA - ES AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 1 of 1MIL SPECS Ic O0001e5 oO01341 4 a 3 33/3 MIL -S-19500/248A(ER) 1/ AMENDMENT 2 23 June 1982 SUPERSEDING AMENDMENT 1 18 April 1966 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N2015, 2N2016 This amendment forms a part of Military Specification MIL-S-19500/248(EL), dated 10 April 1963, and is approved for use by the US Army Electronics Research and Development Command, Department of the Army and is available for use by all Departments and Agencies of the Department of Defense. PAGE 3 3.5: Delete and substitute: "3.5 Marking. Except as otherwise specified herein, marking shall be in accordance with Specification MIL-S-19500. If any specification-requirements waiver has been granted, the product-identification marking shail consist of the classification type designation only." 3.5.1: Delete in its entirety. PAGE 10 Add the following new paragraph: "6.4 Mounting insulators. The following statements should be supplied with each device: a. Ensure insulating tubing is in place on the locator pin. b. The insulating washer should be appropriately greased on both sides with heat sinking compound before transistor is mounted on heat sink." PAGE 11 FIGURE 1, add notes 2 and 3 as follows: "2. The insulating material covering the locator pin shall have an operational 1 temperature equal to or greater than 135C. 3. Locator pin insulator and insulating washer (see 6.4)." 1/ For FSC 5961, Army EL is now ER. The margins of this amendment are marked with an asterisk to indicate where changes (additions, modifications, corrections, deletions) from the previous amendment were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment. Custodians: Preparing activity: Army - ER Army ~ ER (Project 5961-A835) Agent: DLA - ES 1 of 1 FSC 5961MIL SPECS Icy Oo001eS W091354e &b a 3373 MIL~S-19500/248A (EL) 10 April 1963 SUPERSEDING MIL-S-19500/248(SigC) 21 dune 1962 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N2015, 2N2016 1. SCOPE 1.1 Scope.- This specification covers the detail requirements for silicon, NPN, transistors for use In high-power circuit applications and having the following particular characteristics at Ta =+25 + 3C, (See 3.2 herein): MRE ICBO lEBO Vee Vee (ot) (at: (at: (at: (ot: (ot: (at: Ic = 5Adc le = 10 Adc Veg =30 Vde | Veg=10 Vde} Ic = 5 Ade Ic = 5 Adc Vcp=4.0Vde) | Veg=4.0Vde) | Ip = 0) Ic =0 Vcpe=4.0Vde)| Ig= 0.5 Adc) --- o-- vAdc wAde Vde Vde Minimum 15 a --- --- --- --- Moximum 50 --- 50 50 2.2 1,25 1.2 Maximum ratings. - VcBo VEBO VcEX Vceo bus) 2N2015 2N2016 2N2015 2N2016 2N2015 2N2016 Vde Vde | Vde Vde Vde Vde Vde 100 130 10 100 130 50 65 Pc Y/ Ic Ip Oj-c Ty T3tg Altitude Ww Ade | Ade sc ee e ft 150 10 6 1,17 +200 -65 to+200 | 100,000 1/ - ~ This power dissipation is for 1,000 hours expected life at a mounting temperature of + 25 + 3C. For power dissipation at mounting temperatures.up to + 200C, derate at 0.86 W/C. Sheet 1 of 11 sheetsMIL SPECS tc OO001e5 O001343 & i MIL~S-19500/248A(EL) 2, APPLICABLE DOCUMENTS 2.1 The following documents, of the Issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein: SPECIFICATIONS MILITARY MIL-$-19500 Semiconductor Devices, General Specification For STANDARDS MILITARY MIL-S1 D-750 Test Methods For Semiconductor Devices (Copies of specifications, standards, drawings, and publications required by contractors in connection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. Both the title and number or symbol should be stipulated when requesting copies.) 3. REQUIREMENTS 3.1 General.= Requirements for the transistors shall be in accordance with Specifi- cation MIL-$-19500, and as otherwise specified herein, 3.2 Abbreviations and symbols.- The abbreviations and symbols used herein are defined in Specification MIL-5-19500 and as follows: PC Cee oeneerenseres collector power dissipation VCEO(sus).-occeceess Collector-to emitter voltage, open base, sustaining VCEXs occccccceccece Collector-to-emitter voltage, emitter-to-base reverse blased 3.3 Design and consiruction.= The transistors shall be of the design, construction, and physical dimensions specizied in Figure | herein. 3.3.1 Terminal arrangement.= The terminal arrangement on the transistors shall be as indicated in Figure | herein. 3.3.2 Operatin ition.= The transistors shall be capable of proper operation in any position, ,MIL SPECS IC poo00125 oo01344 Ty MIL-S-19500/248A(EL) 3.4 Performance characteristics.- The transistor performance characteristics shall - be as specified in Tables |, Il, cond Tit herein. Except where specifically differentiated for respective transistor types (see 1.1, 1.2, and Tables 1, Il, and III herein), the perfor- mance requirements, including characteristics, ratings, test conditions, and test limits, apply equally to both transistor types covered herein. 3.5 Marking. - The transistor shall be marked in accordance with Specification MIL-S-19560 and as follows. When the diminutive size or lack of suitable surface area prevents routine marking, on the device, of all items required by Specification MIL-S-19500, the following items may be omitted in the following preferred order: color-band type identification (if specified for the device), country of origin, manufacturer's identification. Where only a minimum of items can suitably be marked on the device, first consideration shall be given to marking the complete type designation (see 3.5.1 herein), and then to Inclusion of the acceptance date and inspection lot Identification. However, all required = - marking shall be placed on the unit package. 3.5.1 Complete type-designation marking. - Complete type-designation marking of transistors procured on Department of Army contracts, and which have, passed Government inspection and comply with all requirements of this specification, shall consist of: "USA- manufacturer's qualification code letters-transistor designation (including any assigned reliability indicator.)" The letters " JAN" or any abbreviation thereof shall not be used. If any specification waiver has been granted, the combination "USA-manufacturer's qualification code letters" shall not be used to complete the type-designation marking. 4. QUALITY ASSURANCE PROVISIONS 4.1 General.- Except as otherwise specified erein, the responsibility for inspection, generol procedures for acceptance, classification of inspection, and inspection conditions and methods of test shall be in accordance with Specification MIL-S-19500, Quality Assurance Provisions. 4.1.1 Responsibility for inspection. - Unless otherwise specified in the contract or purchase order, the supplier is responsible for the performance of all inspection require- ments as specified herein. Except as otherwise specified, the supplier may utilize his own facilities or any.commercial laboratory acceptable to the Government. The Government _ reserves the right to perform any of the inspections set forth in the specification where such Inspections are deemed necessary to assure supplies and services conform to prescribed requirements. 4.2 Qualification and Acceptance Inspection. ~ Qualification and Acceptance Inspection shall be in accordance with Specification MIL-S-19500, Quality Assurance Provisions, and as otherwise specified herein. Groups A, B, and C Inspection shall consist of the examinations and tests specified in Tables |, Il, and Ill, respectively, herein. Acceptance Inspection shall include inspection of Preparation for Delivery (see 5.1 herein). 4.2.1 Specified LTPD for subgroups.- The LTPD specified for a subgroup in Tables t, UW, and Ui roretn shall apply for all of the tests, combined, in the subgroup. (See 6.2 herein.) 9MIL SPECS Ic O0001e5 QO01345 1 i MiL~S-19500/248A(EL) 4.2.2 Mechanical damage resulting from tests.- Except for intentional deforming, mutilating, or dizmembering mechanical-stress tests to which samples are subjected, there shall be no evidence of mechanical damage to any sample unit as a result of any of the Group A, B, or C tests. 4.2.3 Destructive tests.- The Group B, Subgroups 2, 3, 5, 6, 7, and 8 tests are considered destructive. However, the tests of Subgroups 2, 3, 6, 7, and 8 can be considered non-destructive if sufficient evidence Is presented to the Government inspection authority to that effect. Acceptable evidence, for example, would be repeating of all Subgroups 2, 3, 6, 7, and 0 tests, ten times, without significant devi-e degradation. This test repetition procedure need be done only once at inception of Acceptance In.nection, provided no change in design, or of production techniques, has been effected. 4.2.4 Disposition of sample units.- Sample units that have been subjected to Group B, Subgroup 5 test shall not be delivered on the controct or order. Sample units that have been subjected to and have passed Group B, Subgroups 2, 3, 6, 7, and 8 tests not determined to be destructive tests may be dellvered on the contract or order provided that, after Group B inspection is terminated, those sample units ore sublected to and pass Group A Inspection. Defective units from any somple group that may hove passed group inspection shall not be delivered on the contract or order until the defect(s) has been remedied to the satisfaction of the Government. 4.3 Particular examination and test procedures. - 4.3.1 Collector-fmitter Voltage, Open Base, Sustaining test.- The specified currents shall be applied, unde: the specified test conditions, and the collector-to-emitter voriage shall then be measured. 4.3.2 Collector-Emitter Voltage, Emitter-To-Base Reverse Biased test.- The specified current and voltage shall be applied, under the specitied test conditions, and the collector- te-emitier voltoge shall then be measured, 4.3.3 Base-Emitie: Voltage test.- The specified current and voltage shall be applied, ang the dc base-to-emitter voltage shall then be measured.MIL SPECS Ich Oo00225 Ooo1s4b 3 i MIL-S=19500/248A(EL). - Table |. Group A inspection. 7 Test Method per Conditions J Limits Unit MIL-STD-750 Examination or test VY LTPD Symbol Min. Max. , Subgroup | 10 ~ 207) Visual and mechanical --- --- ere eee cone examination Subgroup 2 5 7 3036 Collect or-base cutoff Bias Cond. D icBO --- 50 vAde current Vcp = 30 Vde ee ip =0 2/ Collector-emitter Ic = 200 mAdc voltage, open base, Ip =0 sustaining: 2N2015 VceEo(sus) 50 e-- Vde 2N2016 Vceo(sus) 465 ene Vde 3/ Collector-emitter voltage, Ic = 2.0 mAdc emltter-to-base reverse Vep = 1.5 Vde biased: - 2N2015 VCEX 100 --- Vde 2N2016 VcEX 130 --- Vde 3061 Emitter-base cutoff Bias Cond. D lEBO tee= 50 vAde current VeB = 10 Vde ic =0 Subgroup 3 5 3076 Forward-current transfer 1c =5.0 Ade hFE 15 50 == ratio VcE = 4.0 Vde 3076 Forward-current transfer. 1c = 10.0 Adc hFE 7.5 ore eee tatlo VCE = 4.0 Vde 307] Collector-emitter Ic = 5,0 Ade VCE(sat) w-- 1.25 Vde saturation voltage ig = 500 mAdc Y Base-emitter voltage: ic= 5.0 Ade VoE \-- 2,2- Vde VcE = 4.0 Vde ~ Yee 3.4 herein. 2/se0 4.2.1 herein. Vee 4.3.2 herein Af See 4.3.3 herein.MIL SPECS MIL-S-19500/248A(EL) 1 ff cooosas OOOL3S4? 5S i Table Il. Group B inspection. Test Methoa per Conditions Limits Unit MiL-S1 D-750 Examination or test V/ LTPD Symbol Min. Max. , Subgroup 1 20 2056 Physical dimensions one wre wee wee Subgroup 2 10 203) Soldering heat 1 cycle o-- ane ee owe 1051 Temperature cycling Test Cond, C woe wen eee wee 1056 Thermal shock Test Cond. A oo- a (glass strain) 1021 Moisture resistance No initial condition= <= wen wee wee ing End-point tests: 3036 Collector-base cutoff Bias Cond. D icBO wee 100 vAde current Vcp = 30 Vde {E=0 3076 Forward=current transfer = 1c = 5.0 Ade hFE 12.5 soe oon ratio VceE = 4.0 Vde Subgroup 3 20 20146 Shock Non-operating om woe wae aoe G = 500 5 blows of 1 msec. ea. in orientations XI, Yi, 2,Z1 (total = 20 blows) 2006 Constant acceleratjen G =,10,000 oon one 2 me ome (centrifuge) Orlentations Xi, Yi, 2, Zl 2046 Vibration fatigue Non-operating o-- won ae See 2056 Vibration, voriable we a= one mee frequency End-point tests: Same as for Subgroup 2, aboveMIL SPECS Ic goo01eS 0001344 ? a MIL-S-19500/248A(EL) Table Il, Group B inspection-(Cont'd). - Test Method per Conditions Limits Unit MIL-STD-750 Examination or test YV LTPD Symbol Min. Max. Subgroup 4 10 2/ High-temperature Ta =+ 150C operation: 3036 Collector-base Bias Cond. D ICBO --- 1.5 . mAde cutoff current Vcp = 30 Vde ig =0 a Subgroup 5 20 1046 Salt spray (corrosion) won oon wre eee End-point tests: Same as for Subgroup 2, above Subgroup 6 20 2036 Tension Test Cond.A ooo --- wee wee Fixed position = axis of unit vertical Attached weig.it = 10 Ibs 10 oz (total) to ea. terminal _- Tension time = 10 + 1 sec. 2036 Torque (stud) Test Cond. D o<- woo ane aoe Torque = 12 tb. /in. Torque time = 10 + 1 sec. 2036 Torque (terminal) Test Cond. D --- o-- Ws wee Torque =24 +2 oz/in. applied to flat of ea. terminal Torque time = 10+1 secMIL SPECS Ic OOOO1eS OO01349 4 i MIL -$-19500/248A(EL) Table Il, Group B inspection -(Cont'd). lest Method per Conditions Limits Unit MIL=STD-750 Examination or test Y LTPD Symbol Min, Max. 5 Subgroup 6 ~(Cont'd) End-points tests: 3036 Collector-base cutoff Bias Cond. D ICBO oon 50 = vAde urrent Vos = 30 Vde lg 2Q 3076 Forward-current I = 5,0 Adc hee 15 50 ene transfer ratio VcE = 4.0 Vde Subgroup 7 , A=10 103) High-temperature life Ta = + 200C (non-operating) End-point tests: Same as for Subgroup 2, above Subgroup 8 A=10 1026 Steady state operation TA = + 125 = 3C life with heat sink Po = 65 W, min. End-point tests: Same as for Subgroup 2, above V/ See 3.4 herein. 2/ Test measurement shall be made after thermal equilibrium has been reached at the temperature specified,MIL SPECS 1J cooo1es 0001350 5 i MIL-$=19500/248A(EL) 1 Table tl. Group Cc inspection. Test Method per Conditions __Limits Uni MIL-STD-750 Examination or test 2/ LTPD Symbol | Min. Max. ~"! . Subgroup | 20 313) Thermal iesistance Vcp = 30 Vde 8j-C --- 1.17 *CA 1001 Barometric pressure, Test Cond. D reduced (altitude operation): 3036 Collector-bose cutoff Bias Cond. D ICBO --- 200 wuAde current Vcp = 30 Vde - [p= V/ Periodicity for Group C inspection = Initial lot, and thereafter on a lot every 90 days or every 5th lot, whichever occurs first. 2/ See 3.4 herein.MIL SPECS Icy OOO01e5 0001351 i MIL-S-19500/248A(EL) 5, PREPARATION FOR DELIVERY 5.1 Preparation for delivery.- Preparation for delivery shall be in accordance with Specification MIL-5-=1 . ~ 6 NOTES 6.1 Notes.- The notes included in Specification MIL-S-19500, with the following exceptions, are applicable to this specification. 6.2 Re-evaluation or verification inspection.- The LTPD method is exceptionally well suited for inspection af source, since it provides o high degree of assurance (90% confidence) that the lot represented has a proportion defective less than the specified LTPD volue. However, the LTPD method is not suitable for inspection performed subsequent to sources Inspection since it prevides, at most, a 10% confidence that the lot represented by a fai..u sample actually contains a proportion defective in excess of the specified LTPD value. Asa result, whenever the quality of a lot is re-evaluated or verified by sampling Inspection subsequent to the supplier's satisfactory demonstrations of compliance with the quality requirements, lot disposition should be based on a sampling plan which provides reasonable assurance that any lot rejected contains o proportion defective greater than the specified LTPD or A value for any individual subgroup. When deemed necessary, the purchase order should specify the detailed criteria for lot disposition. 6.3 Qualification. - With respect to products requiring qualification, awards will be made only for such products as have, prior to the time set for opening of bids, beer tested and approved for inclusion in Qualified Products List (QPL)-19500, supplement (Army), whether or not such products have actually been so listed by that date. information pertaining to qualification of products covered by this specification should be requested from the Chief, Stondardization Engineering Division, U. S. Army Electronics Materiel Support Agency, Fort Monmouth, New Jersey, attention: SELMS-PSM-3. NOTICE: When Government drawings, specifications, or other data are used for any purpose other than in connection with a definitely related Government procurement operation, the United States Government thereby incurs no responsibility nor any ob:igation whatsoever; ond the fact that the Government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data is not to be regarded by implication or otherwise as in any manner licensing the holder or any other person or corporation, or conveying any right or permission to manufacture, use, or sell any patented invention that may in any way be related thereto. 10MIL SPECS Icy O0001e5 0001352 4 i MIL-S-19500/248A(EL). 1,250 Dia, Max, joma 520 Max, - ch aXe 375,500 ] Insulated Locatce Pin .14G Dia, Max, 10932 NFe2ZA THD. 390 Max, TERMINALS: E = Emitter B = Base 345 R C = Collector (Case grounded) NOTES 1, All dimensions in inches. Tolerances = + .005 unless otherwise specified. Figure 1. Outline and dimensions. \t