DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25C 0.6 @ VGS = 4.5V 0.9A 0.8 @ VGS = 2.5V 0.7A 1.0 @ VGS = 1.8V 0.5A 1.6 @ VGS = 1.5V 0.3A PRODUCT INFORMATION ADVANCED NEW BVDSS 20V Features and Benefits Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max. Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Power Management Functions Battery Operated Systems and Solid-State Relays Load Switch Case: U-DFN1212-3 (Type C) Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.005 grams (Approximate) U-DFN1212-3 (Type C) D S pin 1 D G G Gate Protection Diode ESD PROTECTED Bottom View Top View S Pin-Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMN2400UFDQ-7 DMN2400UFDQ-13 Notes: Case U-DFN1212-3 (Type C) U-DFN1212-3 (Type C) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information U-DFN1212-3 (Type C) K24 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) K24 YM Date Code Key Year 2015 Code C Month Code Jan 1 2016 D Feb 2 DMN2400UFDQ Document number: DS37853 Rev. 4 - 2 2017 E Mar 3 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 6 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N 2025 M Dec D February 2018 (c) Diodes Incorporated DMN2400UFDQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS PRODUCT INFORMATION ADVANCED NEW Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 4.5V Steady State Continuous Drain Current (Note 7) VGS = 2.5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C Value 20 12 0.9 0.7 ID A 0.7 0.5 3.0 0.8 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 7) Unit V V IDM IS A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA PD RJA RJc TJ, TSTG Steady State Steady State Value 0.44 283 0.85 147 112 -55 to +150 (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 20 - V Zero Gate Voltage Drain Current TJ = +25C IDSS - - Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS - - 80 100 1.0 VGS(TH) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD 0.45 - 0.35 0.45 0.6 0.7 1.4 0.7 1.0 0.6 0.8 1.0 1.6 1.2 Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 37.0 5.7 4.2 68 0.5 0.07 0.1 4.06 7.28 13.74 10.54 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Unit W C/W W C/W C/W C nA A V S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 4.5V, VGS = 0V VDS = 20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 200mA VGS = 1.8V, ID = 100mA VGS = 1.5V, ID = 50mA VDS = 3V, ID = 200mA VGS = 0V, IS = 500mA VDS =16V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47, RG = 10, ID = 200mA 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN2400UFDQ Document number: DS37853 Rev. 4 - 2 2 of 6 www.diodes.com February 2018 (c) Diodes Incorporated DMN2400UFDQ 1.5 2.0 VGS = 4.5V VDS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.5 )A ( T 1.0 N E R R U C N IA R D 0.5 ,D I VGS = 2.0V VGS = 1.8V 1.0 VGS = 1.5V 0.5 TA = 150C TA = 125C TA = 85C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics ) ( E C N A T S IS E R -N O E C R U O S -N I A R D ,N ) 1.6 VGS = 1.5V 0.8 VGS = 1.8V VGS = 2.5V 0.4 VGS = 5.0V 0 0 R 2 VGS = 4.5V ID = 1.0A VVGS 2.5V GS==2.5.V ID = 500mA 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( (C)) Fig. 5 On-Resistance Variation with Temperature DMN2400UFDQ Document number: DS37853 Rev. 4 - 2 3 0.8 VGS = 4.5V 0.6 TA = 150C TA = 125C 0.4 TA = 85C TA = 25C 0.2 TA = -55C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.6 1.2 0.5 1 1.5 2 2.5 VGS , GATE SOURCE VOLTAGE (V) O (S D VGS = 4.5V 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 0 Fig. 2 Typical Transfer Characteristics 2.0 1.2 TA = 25C TA = -55C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) PRODUCT INFORMATION ADVANCED NEW VGS = 2.5V 3 of 6 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( ( C)) Fig. 6 On-Resistance Variation with Temperature February 2018 (c) Diodes Incorporated DMN2400UFDQ VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 1.0 IS, SOURCE CURRENT (A) )A ( 1.2 T N E R R U C 0.8 E C R U O S , S 0.4 I ID = 1mA 0.8 ID = 250A 0.6 0.4 TA = 25C 0.2 T (S G V 0 -50 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -25 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 0 )A 1,000 n ( T N E R R 100 U C E G A K A 10 E L E C R U O S 1 -N IA R D ,S S D 0.1 I 0.2 0.4 0.6 0.8 1.0 VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 60 20 5 1.2 TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 10 RDS(on) Limited PW = 100s 4 I D, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) PRODUCT INFORMATION ADVANCED NEW 1.2 )V ( E G A T L O V D L O H S E R H T E T A G , )H VDS = 10V ID = 250mA 3 2 1 DC PW = 10s 1 0 0 0.1 0.2 0.3 0.4 0.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2400UFDQ Document number: DS37853 Rev. 4 - 2 0.6 PW = 1s 0.1 0.01 4 of 6 www.diodes.com TJ(MAX)=150 TC=25 Single Pulse DUT on 1*MRP Board VGS = 4.5V 0.1 PW = 100ms PW = 10ms PW = 1ms 1 10 VDS, DRAIN -SOURCE VOLTAGE (V) Figure Output Characteristics Fig. 12 12 Typical SOA, Safe Operation Area 100 February 2018 (c) Diodes Incorporated DMN2400UFDQ D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE PRODUCT INFORMATION ADVANCED NEW 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 283C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN1212-3 (Type C) A1 A U-DFN1212-3 Type C Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 D2 0.75 0.95 0.85 e 0.80 E 1.15 1.25 1.20 E2 0.40 0.60 0.50 L 0.25 0.35 0.30 L1 0.65 0.75 0.70 All Dimensions in mm A3 Seating Plane L D e b1 E L1 E2 D2 b DMN2400UFDQ Document number: DS37853 Rev. 4 - 2 5 of 6 www.diodes.com February 2018 (c) Diodes Incorporated DMN2400UFDQ Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PRODUCT INFORMATION ADVANCED NEW U-DFN1212-3 (Type C) X2 Y1 X1 Dimensions Y2 G X Y C G X X1 X2 Y Y1 Y2 Value (in mm) 0.800 0.200 0.320 0.520 1.050 0.450 0.250 0.850 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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