ky SGS-THOMSON MICROELECTRONICS STD8N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE Voss Ros(on) lo STD8Ni0L 100 V < 0.33 2 BA TYPICAL Rosin) = 0.25 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS IPAK DPAK TO-251 TO-252 (Suffix 7-1") (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM D(TAB or 2) (1) s(3) Symbol Parameter Value Unit Vos Drain-source Voltage (Vas = 0) 100 V Voer |Drain- gate Voltage (Ras = 20 kQ) 100 Vv Vas |Gate-source Voltage +15 Vv ip Drain Current (continuous) at T, = 25 C 8 A Ip Drain Current (continuous) at Tc = 100 C 5.5 A Ipw(*) {Drain Current (pulsed) 32 A Prot | Total Dissipation at T, = 25 C 45 WwW Derating Factor 0.3 WPC Tstg |Storage Temperature -65 to 175 C Tj Max. Operating Junction Temperature 175 C (*) Pulse width limited by safe operating area March 1995 1/10 MH 792923? OO?2be7 387STD8N10L THERMAL DATA Rthj-casa |Thermal Resistance Junction-case Max 3.33 C/W Rihj-amb |Thermal Resistance Junction-ambient Max 100 C/W Rine-sink [Thermal Resistance Case-sink Typ 1.5 C/W Ti Maximum Lead Temperature For Soldering Purpose 275 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 8 A (pulse width limited by T; max, 5 < 1%) Eas Single Pulse Avalanche Energy 25 mJ (starting Tj = 25 C, Ip = lan, Von = 25 V) Ear Repetitive Avalanche Energy 6 mJ (pulse width limited by Tj max, 5 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 5.5 A (T. = 100 C, pulse width limited by T; max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vieryoss |Drain-source Ip=250 vA Ves=0 100 Vv Breakdown Voltage lpss Zero Gate Voltage Vos = Max Rating 250 pA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 Te = 125C 1000 HA lass Gate-body Leakage Vaes=4t15V + 100 nA Current (Vos = 0) ON (*) Symbol Parameter Test Conditions Min. | Typ. | Max. Unit Vestn) |Gate Threshold Voltage |Vos= Vas Ip = 250 pA 1 1.6 2.5 V Ros(on) |Static Drain-source On |Vas=5V lo=4A 0.25 | 0.33 Q Resistance Ves=5V Ip=4A_ Te = 100C 0.66 a ID(on) +|On State Drain Current |Vps > ID(on) X Rosionjmax 8 A Ves=10V DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Gis (*) [Forward Vos > Ip(on) X Aps(onymax Ip=4A 3 7 S Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 430 650 pF Coss Output Capacitance 90 150 pF Crss Reverse Transfer 20 30 pF Capacitance 1 eno [yy 86S:THOMSON 'T7 imerosueTRonies Mt 7929237? 0072628 213STD8N10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit taon) | Turn-on Time Vop=50V lb=4A 45 65 ns t Rise Time Reg = 602 Vas =5V 140 200 ns (see test circuit, figure 3) {di/dt)on |Turn-on Current Slope |Vpp = 80 V ID=8A 95 A/us Re = 509 Vas=5V (see test circuit, figure 5) Qg Total Gate Charge Vop = 80V Ip=8A Ves=5V 12 20 nc Qos Gate-Source Charge 5 nc Qga Gate-Drain Charge 4 nc SWITCHING OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit trvetty |Off-voltage Rise Time |Vpn=80V Ib=8A 50 70 ns tr Fall Time Re=5009 Ves=5V 50 70 ns te Cross-over Time (see test circuit, figure 5) 100 140 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Isp Source-drain Current 8 A Isom(*) |Source-drain Current 32 A (pulsed) Vso (*) |Forward On Voltage Isp = 8A Vas=0 1.5 Vv tr Reverse Recovery Isn = 8A di/dt = 100 A/us 80 ns Time Vop = 50V Tj= 150C Qn Reverse Recovery (see test circuit, figure 5) 0.24 wo Charge IRAM Reverse Recovery 6 A Current (*} Pulsed: Pulse duration = 300 us, duty cycle 1.5% (*) Pulse width limited by safe operating area Safe Operating Area * & oe .C. OPERATION Thermal Impedance 107 107% 107? 107" t,(s) 3/10 10 107 Vos 10 kr ON MH 792923? 0072629 15TSTD8N10L Derating Curve Go27860 Pros (W) 40 36 20 10 9 50 100 150 Tose C) Transfer Characteristics gocasoso Ip (A) 12 10 0 1 2 3 4&4 5 9 Vgg(j Static Drain-source On Resistance Output Characteristics acssn4so Ip (A) Ves =5V 12 Q 10 20 30 Vps (V) Transconductance Sts (5) 12 10 a 2 4 6 8 IpfA) Gate Charge vs Gate-source Voltage R, stan} Ves (V) (a) 0.34 5 0.30 4 0.26 3 0.22 2 0.18 1 0.14 Oo 2 4 6 8 10 I,A) a 4 8 12. Qg{nC} ane Gj 868-THomson 'Y7 wicrosucTRomics Me 792923? OO7ebs0 171STD8N10L Capacitance Variations ecssaso C(pF) 600 500 400 300 200 100 Cons ras 0 10 20 30 406 650 Vos () Normalized On Resistance vs Temperature @cs9110 Rosier) (nerm} 2.0 1.6 Normalized Gate Threshold Voltage vs Temperature ecsaioo Vescih) norm 1.2 1.0 0.8 0.6 0.4 ~50 0 50 100 7,(%) Tum-on Current Slope di /at am (A/us) 80 60 1.2 40 Vos=5V 20 0.8 pada 0.4 -50 0 50 100 (c) 0 200 400s 6OD-s(iiBNDsaRQ (2) Turn-off Drain-source Voltage Slope Cross-over Time dv/dt 6csa1s te (ns Gt59140 (v/ns) oto) 1.6 Voo =80 / 600 Veg =5 Ip =8A 1.2 460 yf 0.8 7 200 0.4 c 200 4400S 60D.-(sBD-saR (1) a 400 800 1200 Rg (0) 10 Gj 868-THomsoN S/ vs RIAN RAT SeeSTD8N10L Switching Safe Operating Area Ip (A) 32 24 16 G 25 38 7 100 Vos (V) Source-drain Diode Forward Characteristics Geo29e00 Vsp 0. 0 8 16 24 32 Igy (A) Fig. 1: Unclamped Inductive Load Test Circuits Accidental Overload Area Ip (A) 32 24 T, =150C tp =20 us 16 0 25 50 75-180 Vos () Fig. 2: Unclamped Inductive Waveforms L Yo 2200 33 o BF BF Yop 3 man i) 3 a oe | | Ht DUT Pw woke scos970 6/10 iS 7 oGS-THOMSON Tf jaicrosctronics WM 752923? CO?eb3se 744STD8N10L Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load Vop vt pys7ka jm iKa 100nF Ry le 3.3 BF MF Voe Yb _ ut. Ra i A DUT. a} I i | LL en Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 1000 BF Vop _ G7 868-THOMSON TNO SY7 imerosucrronies me 7929237 OO72b33 440STD8N10L At L2 D ! L | eo | 2 Bl - 8 SS t 4 W4- Bp - apnoea ee O- ii i) a - re 0068771 -E 8/10 K37 iheroutscreanies Mm 792923? 0072634 51? oeSTD&N10L DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 Al 0.9 14 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 .4 0.204 0.212 Cc 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 44 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 0.031 L4 0.6 1 0.023 0.039 H 4 DETAIL"A 4 o"-r" ogg C2 Ai DETAIL A 0068772-B 9/10 A571 Senonsctnontes ME 7929237 0072635 4535