© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 0 1Publication Order Number:
NVMFS6B05NL/D
NVMFS6B05NL
Power MOSFET
100 V, 5.6 mW, 114 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS6B05NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage VGS ±16 V
Continuous Drain
Current RqJC
(Notes 1, 3) Steady
State
TC = 25°CID114 A
TC = 100°C 80
Power Dissipation
RqJC (Note 1) TC = 25°CPD165 W
TC = 100°C 83
Continuous Drain
Current RqJA
(Notes 1, 2, 3) Steady
State
TA = 25°CID17 A
TA = 100°C 12
Power Dissipation
RqJA (Notes 1 & 2) TA = 25°CPD3.8 W
TA = 100°C 1.9
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 330 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175 °C
Source Current (Body Diode) IS130 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 50 A) EAS 125 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX = 6B05NL (NVMFS6B05NL) or
XXXXXX = 6B05LW (NVMFS6B05NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
100 V 5.6 mW @ 10 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
8.2 mW @ 4.5 V 1 14 A
NVMFS6B05NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ62.9 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 80 V TJ = 25 °C 25 mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 16 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 3.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 20 A 4.7 5.6 mW
VGS = 4.5 V 6.5 8.2
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
3980
pF
Output Capacitance COSS 1370
Reverse Transfer Capacitance CRSS 89
Total Gate Charge QG(TOT) VGS = 4.5 V, VDD = 50 V, ID = 50 A 24.6
nC
VGS = 10 V, VDS = 50 V; ID = 50 A
52.5
Threshold Gate Charge QG(TH) 6.8
Gate−to−Source Charge QGS 12
Gate−to−Drain Charge QGD 5.9
Plateau Voltage VGP 3.2 V
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 10 V, VDS = 50 V,
ID = 25 A, RG = 2.5 W
17.3
ns
Rise Time tr84
T urn−Off Delay Time td(OFF) 28.4
Fall Time tf83.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 25 A TJ = 25°C 0.84 1.2 V
TJ = 125°C 0.72
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
60.6
ns
Charge Time ta31.4
Discharge Time tb29.2
Reverse Recovery Charge QRR 82 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS6B05NL
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.01.00
0
20
100
54210
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
9871063
250 7030
4
2
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
1.0
1.4
1005040302010
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
3.0 V
VDS = 10 V
TJ = 25°C
TJ = 125°CTJ = −55°C
6
ID = 50 A
TJ = 25°C
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 50 A
VGS = 10 V
TJ = 85°C
TJ = 125°C
3
8
1.2
0.6
1.6
120
10
4.0 V
2.0 0
40
100
80
140
20
120
12
3
2.2
60
80
8
2.5
3.4 V
VGS = 10 V
to 4.5 V
40
140
60
5 130 15090 110
0.8
1.E+00
0.5 1.5
4
10
1.8
TJ = 150°C
3.8 V
3.2 V
3.6 V
5
6
7
60 70 80 90175
4
2.0
0
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
NVMFS6B05NL
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
100
1E+1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
10
100
1000
0.90.80.70.60.40.3
1
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
QT
VDS = 50 V
ID = 25 A
VGS = 4.5 V
td(on)
tr
tf
TJ = 25°C
1E+2
1.1
0
2
10
024
832 48
TJ = 25°C
VDS = 50 V
ID = 50 A
100
16
1E+4
6
8
4Qgs Qgd
td(off)
0.5
100
1E+3
40
20 30 40 50 60 70 80 90
1
9
5
7
3
1.0
TJ = −55°CTJ = 125°C
5220
428 4412 36
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
1000
ID, DRAIN CURRENT (A)
VGS ≤ 10 V
Single Pulse
TC = 25°C
500 ms
1 ms
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
NVMFS6B05NL
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5
TYPICAL CHARACTERISTICS
Figure 12. GFS vs. IDFigure 13. IPEAK vs. TAV
ID, DRAIN CURRENT (A) TAV, TIME IN AVALANCHE (sec)
10060100
0
10
30
50
60
80
0.0010.0001
1
10
100
Figure 14. Thermal Response
PULSE TIME (sec)
0.010.001 1010.00010.00001 0.10.000001
0.001
0.01
0.1
1
10
100
IPEAK, DRAIN CURRENT (A)
R(t) (°C/W)
100 1000
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.01
NVMFS6B05NL, 650 mm2, 2 oz, Cu Single Layer Pad
100°C
25°C
20
40
70
20 30 40 50 70 80 90
GFS, SMALL−SIGNAL FORWARD
TRANSFER CONDUCTANCE (S)
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS6B05NLT1G 6B05NL DFN5
(Pb−Free) 1500 / Tape & Reel
NVMFS6B05NLWFT1G 605LW DFN5
(Pb−Free, Wettable Flanks) 1500 / Tape & Reel
NVMFS6B05NLT3G 6B05NL DFN5
(Pb−Free) 5000 / Tape & Reel
NVMFS6B05NLWFT3G 605LW DFN5
(Pb−Free, Wettable Flanks) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS6B05NL
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NVMFS6B05NL/D
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