InGaAs PIN photodiodes G8422/G8372/G5852 series Long wavelength type (Cut-off wavelength: 2.05 to 2.1 m) Features Applications Cut-off wavelength: 2.05 to 2.1 m Gas analyzer 3-pin TO-18 package: low price Water content analyzer TE-cooled type TO-8 package: low dark current NIR (near infrared) photometry Active area: I0.3 to I3 mm Accessories (Optional) Preamp for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Specications / Absolute maximum ratings Type No. G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 Dimensional outline Package Cooling TO-18 TO-5 TO-8 One-stage TE-cooled TO-8 Two-stage TE-cooled Active area (mm) I0.3 I0.5 I1 I3 I0.3 I1 I3 I0.3 I1 I3 Non-cooled Thermistor power dissipation (mW) Absolute maximum ratings TE-cooler Reverse Operating allowable voltage temperature current VR Topr (A) (V) (C) - - Storage temperature Tstg (C) -40 to +85 -55 to +125 -40 to +70 -55 to +85 2 1.5 0.2 1.0 Electrical and optical characteristics (Typ. unless otherwise noted) Type No. G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 Measurement condition Element Temperature T Spectral response range O Peak sensitivity wavelength Op Photo sensitivity S O=Op (C) (m) (m) Min. Typ. (A/W) (A/W) 25 0.9 to 2.1 -10 0.9 to 2.07 -20 0.9 to 2.05 1.95 0.9 1.2 Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (A) 50 (A) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off frequency fc VR=1 V RL=50 : Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV (MHz) 100 80 40 3 100 40 3 100 40 3 (pF) 8 20 80 800 8 80 800 8 80 800 (M:) 0.9 0.3 0.1 0.01 9 1 0.1 18 2 0.2 D O=Op NEP O=Op (cm*Hz1/2/W) (W/Hz1/2) 1.5 x 10-13 2.5 x 10-13 11 2.5 x 10 4 x 10-13 1.5 x 10-12 5 x 10-14 8 x 1011 1 x 10-13 4 x 10-13 3 x 10-14 1.2 x 1012 8 x 10-14 3 x 10-13 The G8422/G8372/G5852 series may be damaged by electrostatic discharge, etc. Be carefull when using the G8422/G8372/G5852 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G8422/G8372/G5852 series Spectral response Photo sensitivity temperature characteristic (Typ.) 1.4 T=25 C Temperature coefficient (%/C) 1.2 Photo sensitivity (A/W) (Typ.) 2 1.0 0.8 0.6 0.4 T=-20 C 0.2 1 0 T=-10 C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -1 0.8 2.4 1.0 Wavelength (m) 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Wavelength (m) KIRDB0226EA KIRDB0207EA Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 C) 100 A G8372-03 100 nA Dark current Dark current 10 A G8372-01 1 A G8422-05 (Typ.) 1 A 10 nA G5852-13 (T=-10 C) G5852-23 (T=-20 C) G5852-11 (T=-10 C) G5852-21 (T=-20 C) G5852-103 (T=-10 C) 100 nA 1 nA G5852-203 (T=-20 C) G8422-03 10 nA 0.01 0.1 1 10 Reverse voltage (V) 100 pA 0.01 0.1 1 10 Reverse voltage (V) KIRDB0235EA KIRDB0228EA 2 InGaAs PIN photodiodes G8422/G8372/G5852 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 M G8372-03 G5852-13/-23 G8422-03 G5852-103/-203 G8422-05 Shunt resistance Terminal capacitance 1 M 1 nF G8372-01 G5852-11/-21 100 pF 10 pF 10 k G8372-03 G5852-13/-23 G8422-05 1 k G8422-03 G5852-103/-203 1 pF 0.01 G8372-01 G5852-11/-21 100 k 0.1 1 100 -40 10 Reverse voltage (V) -20 0 20 40 60 80 KIRDB0237EA Thermistor temperature characteristic Cooling characteristics of TE-cooler (Typ.) 6 Resistance () 5 10 104 3 -20 0 20 One-stage TE-cooled type 0 -20 Element temperature (C) Two-stage TE-cooled type -40 -60 20 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 40 Element temperature (C) 10 -40 100 Element temperature (C) KIRDB0236EA 10 90 0 0.4 0.8 1.2 1.6 Current (A) KIRDB0116EA KIRDB0231EA 3 InGaAs PIN photodiodes G8422/G8372/G5852 series Current vs. voltage (TE-cooler) (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage TE-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) G8422-03/-05, G8372-01 G8372-03 9.2 0.2 5.4 0.2 4.2 0.2 0.45 lead 18 Min. 0.45 lead 2.5 0.2 0.15 Max. 3.6 0.2 A Photosensitive surface 13 Min. Photosensitive surface Window 5.9 0.1 0.4 Max. 8.1 0.1 4.7 0.1 Window 3.0 0.1 5.1 0.3 2.5 0.2 1.5 Max. G8422-03/-05 G8372-01 A 2.6 0.2 Case 2.7 0.2 Case KIRDA0202EA KIRDA0151EA 4 InGaAs PIN photodiodes G8422/G8372/G5852 series G5852-103/-11/-13 G5852-203/-21/-23 15.3 0.2 15.3 0.2 14 0.2 6.4 0.2 14 0.2 12 Min. A Photosensitive surface A Photosensitive surface 12 Min. 0.45 lead 0.45 lead 10.2 0.2 5.1 0.2 5.1 0.2 10.2 0.2 5.1 0.2 5.1 0.2 Window 10 0.2 10 0.2 Window 10 0.2 5.1 0.2 5.1 0.2 Detector element (anode) Detector element (cathode) TE-cooler (-) TE-cooler (+) Thermistor G5852-103 G5852-11/-13 A 4.3 0.2 4.4 0.2 KIRDA0203EA Detector element (anode) Detector element (cathode) TE-cooler (-) TE-cooler (+) Thermistor G5852-203 G5852-21/-23 A 6.6 0.2 6.7 0.2 KIRDA0204EA Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1047E08 Jun. 2011 DN 5