InGaAs PIN photodiodes
G8422/G8372/G5852 series
Long wavelength type
(Cut-off wavelength: 2.05 to 2.1 m)
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Speci¿ cations / Absolute maximum ratings
Electrical and optical characteristics (Typ. unless otherwise noted)
Typ e N o. Dimensional
outline Package Cooling
Active
area
Absolute maximum ratings
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR
Operating
temperature
Topr
Storage
temperature
Tstg
(mm) (mW) (A) (V) (°C) (°C)
G8422-03
TO-18 Non-cooled
I0.3
--
2
-40 to +85 -55 to +125
G8422-05 I0.5
G8372-01 I1
G8372-03 TO-5 I3
G5852-103
TO-8 One-stage
TE-cooled
I0.3
0.2
1.5
-40 to +70 -55 to +85
G5852-11 I1
G5852-13 I3
G5852-203
TO-8 Two-stage
TE-cooled
I0.3
1.0G5852-21 I1
G5852-23 I3
Typ e N o.
Measurement
condition Spectral
response
range
O
Peak
sensitivity
wavelength
Op
Photo
sensitivity
S
O=Op
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 :
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D
O=Op
NEP
O=Op
Element
Temperature
T
(°C) (m) (m)
Min.
(A/W)
Typ.
(A/W)
Typ.
(nA)
Max.
(nA) (MHz) (pF) (M:)
(cm·Hz
1/2
/W)
(W/Hz1/2)
G8422-03
25 0.9 to 2.1
1.95 0.9 1.2
55 550 100 8 0.9
2.5 × 1011
1.5 × 10-13
G8422-05 125 1250 80 20 0.3 2.5 × 10-13
G8372-01 500 5000 40 80 0.1 4 × 10-13
G8372-03 5 (A) 50 (A) 3 800 0.01 1.5 × 10-12
G5852-103
-10 0.9 to 2.07
5.5 55 100 8 9
8 × 1011
5 × 10-14
G5852-11 50 500 40 80 1 1 × 10-13
G5852-13 500 5000 3 800 0.1 4 × 10-13
G5852-203
-20 0.9 to 2.05
3 30 100 8 18
1.2 × 1012
3 × 10-14
G5852-21 25 250 40 80 2 8 × 10-14
G5852-23 250 2500 3 800 0.2 3 × 10-13
The G8422/G8372/G5852 series may be damaged by electrostatic discharge, etc. Be carefull when using the G8422/G8372/G5852 series.
3-pin TO-18 package: low price
TE-cooled type TO-8 package: low dark current
Active area: I0.3 to I3 mm
Gas analyzer
Cut-off wavelength: 2.05 to 2.1 m
Preamp for InGaAs PIN photodiode C4159-03
Heatsink for one-stage TE-cooled type A3179
Water content analyzer
Heatsink for two-stage TE-cooled type A3179-01
Temperature controller for TE-cooled type C1103-04
NIR (near infrared) photometry
Features Applications
Accessories (Optional)
InGaAs PIN photodiodes G8422/G8372/G5852 series
2
Spectral response Photo sensitivity temperature characteristic
Wavelength (μm)
(Typ.)
Photo sensitivity (A/W)
1.41.21.00.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6 1.8 2.22.0 2.4
T=-10 °C
T=-20 °C
T=25 °C
1.00.8 1.6 2.0 2.2 2.4
Wavelength (μm)
Temperature coefficient (%/°C)
-1
(Typ.)
1.2 1.4 1.8
0
1
2
KIRDB0226EA KIRDB0207EA
Dark current vs. reverse voltage
Non-cooled type TE-cooled type
G8372-03
G8372-01
G8422-05
G8422-03
10 μA
0.01 0.1 1 10
Reverse voltage (V)
Dark current
1 μA
10 nA
100 nA
100 μA (Typ. Ta=25
°C
)
100 nA
0.01 0.1 1 10
Reverse voltage (V)
Dark current
10 nA
100 pA
1 nA
1 μA (Typ.)
G5852-13 (T=-10
°C
)
G5852-23 (T=-20
°C
)
G5852-11 (T=-10
°C
)
G5852-21 (T=-20
°C
)
G5852-103 (T=-10
°C
)
G5852-203 (T=-20
°C
)
KIRDB0235EA KIRDB0228EA
InGaAs PIN photodiodes G8422/G8372/G5852 series
Thermistor temperature characteristic Cooling characteristics of TE-cooler
Element temperature (°C)
Resistance (Ω)
103
(Typ.)
104
105
106
-40 -20 0 20
20
0 0.4 0.8 1.2 1.6
Current (A)
Element temperature (°C)
0
-40
-60
-20
40
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
One-stage
TE-cooled type
Two-stage
TE-cooled type
KIRDB0116EA KIRDB0231EA
3
Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature
1 nF
0.01 0.1 1 10
Reverse voltage (V)
Terminal capacitance
100 pF
1 pF
10 pF
10 nF (Typ. Ta=25 °C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
G8422-03
G5852-103/-203
G8422-05
1 MΩ
-40-200 2040608090100
Element temperature (°C)
100 kΩ
10 kΩ
100 Ω
1 kΩ
10 MΩ
(Typ. VR=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
G8372-03
G5852-13/-23
Shunt resistance
KIRDB0236EA KIRDB0237EA
InGaAs PIN photodiodes G8422/G8372/G5852 series
4
Current vs. voltage (TE-cooler)
1.2
Voltage (V)
Current (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
0.4
0.2
00.40.80.2 0.6 1.0 1.2
One-stage
TE-cooled type
Two-stage
TE-cooled type
KIRDB0115EB
KIRDA0202EA
KIRDA0151EA
Dimensional outlines (unit: mm)
G8422-03/-05, G8372-01 G8372-03
Window
3.0 ± 0.1
4.7 ± 0.1
A
3.6 ± 0.213 Min.
5.4 ± 0.2
0.45
lead
Case
2.5 ± 0.2
Photosensitive
surface
G8422-03/-05
2.6 ± 0.2
G8372-01
2.7 ± 0.2A
Window
5.9 ± 0.1
2.5 ± 0.2
0.15 Max.
0.4 Max.
8.1 ± 0.1
9.2 ± 0.2
4.2 ± 0.2
18 Min.
0.45
lead
Case
5.1 ± 0.3
1.5 Max.
Photosensitive
surface
InGaAs PIN photodiodes G8422/G8372/G5852 series
Cat. No. KIRD1047E08 Jun. 2011 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information described in this material is current as of June, 2011. Product specifications are subject to change without prior notice due to improvements or
other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
5
G5852-103/-11/-13 G5852-203/-21/-23
Detector element (anode)
Detector element (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
Window
10 ± 0.2
14 ± 0.2
15.3 ± 0.2
A
6.4 ± 0.212 Min.
0.45
lead
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Photosensitive
surface
5.1 ± 0.2
G5852-103
4.3 ± 0.2
G5852-11/-13
4.4 ± 0.2ADetector element (anode)
Detector element (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
Window
10 ± 0.2
14 ± 0.2
15.3 ± 0.2
A
10 ± 0.212 Min.
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
0.45
lead
Photosensitive
surface
5.1 ± 0.2
G5852-203
6.6 ± 0.2
G5852-21/-23
6.7 ± 0.2A
KIRDA0203EA
KIRDA0204EA
