IRGP4062DPBF - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGB4062DPbF

IRGP4062DPbF

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04/02/09

n-channel

VCES = 600V

IC = 24A, TC = 100°C

tSC ≥ 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for ILM

• Positive VCE (ON) Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

GC E

Gate Collector Emitter

GCE

TO-247AC

TO-220AB

GCE

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 48

IC @ TC = 100°C Continuous Collector Current 24

ICM Pulse Collector Current, VGE = 15V 72

ILM Clamped Inductive Load Current, VGE = 20V

96 A

IF @ TC = 25°C Diode Continous Forward Current 48

IF @ TC = 100°C Diode Continous Forward Current 24

IFM Diode Maximum Forward Current

VGE Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

PD @ TC = 25°C Maximum Power Dissipation 250 W

PD @ TC = 100°C Maximum Power Dissipation 125

TJOperating Junction and -55 to +175

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– ––– 0.60

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– ––– 1.53

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC ––– ––– 0.65 °C/W

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247AC ––– ––– 1.62

RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––

RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

PD - 97190D

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Notes:

VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω

This is only applied to TO-220AB package.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig

V(BR)CES Collector-to-Emitter Breakdown Voltage 600——V

VGE = 0V, IC = 100µA

CT6

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.30—V/°C

VGE = 0V, IC = 1mA (25°C-175°C) CT6

—1.601.95 IC = 24A, VGE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C 9,10,11

—2.04— IC = 24A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 700µA 9, 10,

∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12

gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80µs

ICES Collector-to-Emitter Leakage Current — 2.0 25 µA VGE = 0V, VCE = 600V

—775— VGE = 0V, VCE = 600V, TJ = 175°C

VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8

—1.28— IF = 24A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Ref.Fig

QgTotal Gate Charge (turn-on) — 50 75 IC = 24A 24

Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V

Eon Turn-On Switching Loss — 115 201 IC = 24A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 600 700 µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C

Etotal Total Switching Loss — 715 901 Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V CT4

trRise time — 22 31 ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C

td(off) Turn-Off delay time — 104 115

tfFall time — 29 41

Eon Turn-On Switching Loss — 420 — IC = 24A, VCC = 400V, VGE=15V 13, 15

Eoff Turn-Off Switching Loss — 840 — µJ RG=10Ω, L= 200µH, LS=150nH, TJ = 175°C

f

CT4

Etotal Total Switching Loss — 1260 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V 14, 16

trRise time — 24 — ns RG = 10Ω, L = 200µH, LS = 150nH CT4

td(off) Turn-Off delay time — 125 — TJ = 175°C WF1

tfFall time — 39 — WF2

Cies Input Capacitance — 1490 — pF VGE = 0V 23

Coes Output Capacitance — 129 — VCC = 30V

Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz

TJ = 175°C, IC = 96A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 10Ω, VGE = +20V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3

Rg = 10Ω, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode — 621 — µJ TJ = 175°C 17, 18, 19

trr Diode Reverse Recovery Time — 89 — ns VCC = 400V, IF = 24A 20, 21

Irr Peak Reverse Recovery Current — 37 — A VGE = 15V, Rg = 10Ω, L =200µH, Ls = 150nH WF3

Conditions

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA

TC = 25°C, TJ ≤ 175°C; VGE =15V

Fig. 4 - Reverse Bias SOA

TJ = 175°C; VGE =20V

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

020 40 60 80 100 120 140 160 180

TC (°C)

IC (A)

0 20 40 60 80 100 120 140 160 180

TC (°C)

100

150

200

250

300

Ptot (W)

10 100 1000

VCE (V)

100

1000

IC (A)

0 1 2 3 4 5 6 7 8

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0 1 2 3 4 5 6 7 8

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

1 10 100 1000 10000

VCE (V)

0.1

100

1000

IC (A)

1msec

10µsec

100µsec

Tc = 25°C

Tj = 175°C

Single Pulse

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Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80µs

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

Fig. 11 - Typical VCE vs. VGE

TJ = 175°C

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

012345678

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

0.0 1.0 2.0 3.0

VF (V)

100

120

IF (A)

-40°c

25°C

175°C

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

0 5 10 15

VGE (V)

100

120

ICE (A)

TJ = 25°C

TJ = 175°C

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

5 101520

VGE (V)

VCE (V)

ICE = 12A

ICE = 24A

ICE = 48A

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Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V

Fig. 17 - Typ. Diode IRR vs. IF

TJ = 175°C

Fig. 18 - Typ. Diode IRR vs. RG

TJ = 175°C

0 102030405060

IC (A)

200

400

600

800

1000

1200

1400

1600

1800

Energy (µJ)

EOFF

EON

10 20 30 40 50

IC (A)

100

1000

Swiching Time (ns)

tdOFF

tdON

025 50 75 100 125

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

tdON

010 20 30 40 50 60

IF (A)

IRR (A)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

025 50 75 100 125

RG (Ω)

IRR (A)

0 25 50 75 100 125

Rg (Ω)

200

400

600

800

1000

1200

1400

1600

Energy (µJ)

OFF

EON

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Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175°C

Fig. 23 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 24A; L = 600µH

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 175°C

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25°C

0500 1000 1500

diF /dt ( A/µs)

IRR (A)

010 20 30 40 50 60

IF (A)

200

400

600

800

1000

Energy (µJ)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

8 1012141618

VGE (V)

Time (µs)

120

160

200

240

280

Current (A)

020 40 60 80 100

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

0 5 10 15 20 25 30 35 40 45 50 55

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES

= 300V

VCES

= 400V

0 500 1000 1500

diF /dt (A/µs)

500

1000

1500

2000

2500

3000

3500

4000

QRR (µC)

10Ω

22Ω

100Ω

47Ω

24A

48A

12A

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Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.2329 0.000234

0.3631 0.007009

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.476 0.000763

0.647 0.003028

0.406 0.023686

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci i/Ri

Ci= τi/Ri

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Fig. 28. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC

Fig 27. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.2782 0.000311

0.3715 0.006347

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.693 0.001222

0.621 0.005254

0.307 0.038140

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci i/Ri

Ci= τi/Ri

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VC C

DUT

80 V DUT

480V

VCC

diode clamp /

DUT

DUT /

DRIVER

- 5V

VCC

DUT

R =

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

DUT

360V

VCC

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Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

-50

-40

-30

-20

-10

-0.15 -0.05 0.05 0.15 0.25

time (µS)

(A)

Peak

10%

Pe a k

-100

100

200

300

400

500

600

-5.00 0.00 5.00 10.00

time (µS)

(V)

-50

100

150

200

250

300

(A)

-100

100

200

300

400

500

600

-0.40 0.10 0.60

Time(µs)

(V)

-5

EOFF Loss

5% VCE

5% ICE

90% ICE

VCE

ICE

-100

100

200

300

400

500

600

11.70 11.90 12.10 12.30

Time (µs)

(V)

-10

EON

ICE

90% test

10% ICE

5% VCE

VCE

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TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

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TO-220AB package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/2009

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-247AC Part Marking Information

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

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TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/