S9066-01, S9067-01 photo ICs have spectral response close to human eye sensitivity. Two active areas are made on a single chip. One is for
detecting light in the visible to near infrared range and the other is only sensitive to near infrared light and used for output signal correction.
Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit.
Compared to previously available devices, these photo ICs offer lower output fluctuations for light sources producing the same illuminance at
different color temperatures.
Features
l
Spectral response close to human eye sensitivity
is attained without using visual-compensated filter.
l
Operation just as easy to use as a photodiode
l
Large output current equivalent to phototransistors
l
Lower output-current fluctuations
l
Excellent linearity
l
Low output fluctuations for light sources producing the
same illuminance at different color temperatures
Applications
l
Energy-saving sensor for TVs, etc.
l
Light dimmers for liquid crystal panels
l
Cellular phone backlight dimmers
l
Various types of light level measurement
PHOTO IC
Photo IC diode
Spectral response close to human eye sensitivity
S9066-01, S9067-01
1
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol S9066-01 S9067-01 Unit
Reverse voltage VR-0.5 to 16 V
Photocurrent IL10 mA
Forward current IF10 mA
Power dissipation *1P250 150 mW
Operating temperature Topr -30 to +80 °C
Storage temperature Ts t g -40 to +85 °C
*1: Derate power dissipation at a rate of the following rate above Ta=25 °C.
S9066-01: -3.3 mW/°C, S9067-01: -2.0 mW/°C
■ Electrical and optical characteristics (Ta=25 °C)
S9066-01 S9067-01
Parameter Symbol Condition Min. Typ. Max. Min. Typ. Max. Unit
Spectral response range λ320 to 820 320 to 820 nm
Peak sensitivity wavelength λp-560 - - 560 -nm
Dark current IDVR=5 V - 1.0 50 - 1.0 50 nA
Photocurrent ILVR=5 V, 2856 K, 100 lx -0.37 - - 0.3 -mA
Rise time *2tr - 6.0 - - 6.0 - ms
Fall time *2tf
10 to 90 %, VR=7.5 V
RL=10 kΩ, λ=560 nm -2.5 - - 2.5 -ms
*2: Rise/fall time measurement method
PULSED LIGHT
FROM LED
(
l
=560 nm)
VO
LOAD
RESISTANCE RL
7.5 V
90 % 2.5 V
10 %
VO
tr tf
0.1 µF
KPICC0041EA
Photo IC diode
S9066-01, S9067-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
Cat. No. KPIC1052E04
May 2007 DN
ILLUMINANCE (lx)
(Typ. Ta=25 ˚C, V
R
=5 V, 2856 K)
PHOTO CURRENT
0.1 1 10
10 nA
100 nA
1 µA
10 mA
1 mA
100 µA
10 µA
100 1000
10 pA
1 nA
100 nA
10 µA
1 pA
100 pA
10 nA
1 µA
100 fA
-25 0 5025 75
AMBIENT TEMPERATURE (˚C)
100
DARK CURRENT
(Typ. V
R
=5 V)
0.1
1
10
100
0.01
100 10 k1 k 100 k
LOAD RESISTANCE (Ω)
1 M
RISE/FALL TIMES (ms)
(Typ. Ta=25 ˚C, V
R
=7.5 V, λ=560 nm, Vo=2.5 V)
tr
tf
2
CATHODE
ANODE
0.4
3.2 ± 0.2
0.4
2.3 ± 0.2
2.2 ± 0.2
1.4 ± 0.1
2.7 ± 0.2
(4 ×) 0.5
CENTER OF ACTIVE AREA
ACTIVE AREA 0.52 × 0.64
2.0 ± 0.1
0.25 ± 0.15
0.6
1.1 ± 0.1
Tolerance unless otherwise
noted: ±0.2
Active area position accuracy: X, Y
£
±0.3
Electrodes
KPICB0078EB
■ Dimensional outlines (unit: mm)
■ Spectral response
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200 400 600 800
WAVELENGTH (nm)
1000 1200
RELATIVE SENSITIVITY
(Typ. Ta=25 ˚C, V
R
=5 V)
S9066-01
S9067-01
CONVENTIONAL
TYPE
KPICB0076EA
■ Dark current vs. ambient temperature
KPICB0077EA
■ Rise/fall times vs. load resistance
S9066-01 S9067-01
5.2 ± 0.3
(INCLUDIG BURR)
CENTER OF ACTIVE AREA
ACTIVE AREA 0.64 × 0.52
5.2 ± 0.3
(INCLUDIG BURR)
(SPECIFIED AT THE LEAD ROOT)
PHOTOSENSITIVE
SURFACE ANODE
(ANODE)
NC
CATHODE
(2 ×)
1.0
(DEPTH 0.15)
2.5 ± 0.2
5.0
2.05 ± 0.2
5.0
16.5 ± 1.0
(0.8) (1.0)
1.271.271.27
10˚
5˚
10˚
5˚
0.75 ± 0.15
10˚
5˚
10˚
5˚
0.25
+0.15
-0.1
(4 ×) 0.55
(4 ×) 0.45
1.0
2.0
2.0 (DEPTH 0.15)
Tolerance unless otherwise
noted: ±0.1, ±2˚
Shaded area indicates burr.
Values in parentheses indicate
reference value.
Pin be connected to
Pin on the PC board.
KPICA0050ED KPICA0051EB
■ Operating circuit example
KPICC0091EA
PHOTODIODE
FOR SIGNAL OFFSET
CATHODE
ANODE
C
L
R
L
Vout
REVERSE BIAS
POWER SUPPLY
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
CURRENT AMP
(APPROX. 10000 times)
PHOTODIODE
FOR SIGNAL DETECTION
INTERNAL PROTECTION
RESISTANCE
(APPROX. 150
W
)
The photo IC diode must be reverse-
biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency
components, we recommend
placing a load capacitance CL in
parallel with load resistance RL as
a low-pass filter.
Cut-off frequency fc = 2πCLRL
1
..
■ Linearity
(S9066-01)
KPICB0083EA
