LSE of 813bb71 ooo1saz 4 fj SEMIKRON SEMIKRON INC Vaso | VaRM ( wv) lraws (maximum values for continuous operation) VorM dt Jor 220A [ 280A trav (sin. 180; Tease = ...C) Vv Vs V/ps 140 A (80C) 178 A (78C) 500 400 200 SKT 130/04 C SKT 160/04 C 700 | 600] 200 SKT 130/06 C* SKT 160/06 C 900 800 200 SKT 130/08 C SKT 160/08 C 1300 | 1200 200 SKT 130/12 C* SKT 160/12 C* 1000 SKT 130/12 E SKT 160/12 E 1500 | 1400 | 1000 SKT 130/14 E SKT 160/14 E 1700 | 1600 | 200 SKT 130/16 C* SKT 160/16 C* 1000 SKT 130/16 E SKT 160/16 E Symbol | Conditions SKT 130 SKT 160 ltav sin. 180; Tcase = 85C 130A 160A Itsm Ty = 25C 3500 A 4300A Ty = 130C 3000 A 3750 A *t Ty = 25C 61000 A2s | 92500 A?s Ty = 130C 45000 A2s | 70000 A2s toa Ty = 25C; lq = 1A;dic/dt = 1A/us typ. 1 us tor Vb = 0,67-Vprm typ. 2 us (di/dt)cr| f = 50...60Hz 100A/ ps ln Ty = 25C; typ./max. 150 mA/250 mA IL Ty = 25C; Ra = 33Q; typ./max. 300 mA/600 mA tq Ty = 130C; typ. 120 ps Vr Ty = 25C; Ilr = 500A; max. 2,25V 1,75V Vito) =| Ty = 180C 1,2V 1,0V IT Ty = 130C 2,2mQ 1,5mQ lop, IRD | Ty = 180C; Vop = Vornm ;Vap = Van 50mA 50mA Ver |Ty= 25C 3V lat Ty = 25C 200 mA Vep Ty = 130C 0,25 V Iep Ty = 130C 10mA Rihjc cont. 0,16 C/W sin. 180/rec. 120 0,18/0,20 C/W Ritheh 0,03 C/W TW -40... +180C Tstg -55...+150C M SI units 30 Nm US units 265 Ib. in. a 5-9,81m/s* w 2,10g Case B * Available with UNF thread Thyristors way ge ated aitlan cn Fine Features e@ Hermetic metal cases with ceramic insulators @ Threaded studs ISO M16 x 1,5 or UNF 3/4-16 e International standard cases Typical Applications e DC motor control (e. g. for machine tools) @ Controlled rectifiers (e. g. for battery charging) e AC controllers (e. g. for temperature control) by SEMIKRON B3-23 ~eenomamtig sien aim ct Ken henge Roo La certian 1 Moet atte hlaundinda Ainley SEMIKRON INC} T~- 95-/9 LSE D Bf 4336671 o0oLs32 bE 300 300 w : Rthja w 0,4 0,35 0,3 0,25 0,45 0,5 200 200 0,6 I 0,7 100 100 egw: Fray 0 0 Itay 50 100 150 A OTamb 50 100 C 150 Fig. 1a Power dissipation vs. on-state current and ambient temperature 400 400 w{_SKT 160 Ww 300 300 200 200 100 100 C/W Pray Pray 0 o lay. -5O 100 150. AO Tomb 50 100 150 Fig. 1b Power dissipation vs. on-state current and ambient temperature 200 250 A A 180 _SKT 160 160 200 140 120 150 100 80 100 60 60 30 40 50 = 15 20 | Pel Oe} tay Irav 0 0 0 Tease 50 100 C 150 0 Tease 50 400 Cel 160 Fig. 2a Rated on-state current vs. case temperature Fig. 2b Rated on-state current vs. case temperature B3-24 by SEMIKRON anata SEMIKRON INC T=aS -/9 L5E D a AL3b67) O00LS33 8 SEMIKRON 1000 CE SKT 130 600 SKT 160 400 td 200 100 60 40 20 On 10 di 9T 1 dt 2 4 6 10 20 = 40.- 6OAjfs100 Fig. 3 Recovered charge vs. current decrease w TOI Ww T I { 030 TPP Trrrrrrt Rihea + 0,28 KIE -M 16/110 C/W TI K0,55- M 16] 0,55 C/W ty Ki] - M16]0,35C/W-6 mis 0,26 K 0,55 - M 16] 0,17 C/W-=6 mis |_| \ Prrrttr bt \ [Rehie] = 0,16 C/W 0,24 ~\ cont, +4 NY NY 0,22 ~N. 0,20 NK maeh ECs Si o18| |-SKT 130 Rhic | + SKT 160 0,16 } i ft ft Ff Ff 0 @ 30 60 909 120 150 180 Fig. 5 Thermal resistance vs. conduction angle 600 A SKT 160 200 it 0 Oo vr 0,5 1 1,5 2 Vv 25 Fig. 6 b On-state characteristics 500 3 10 107 Zith)2 [PW] eA Na RN Sat K1,1 KO,55 K11F KO,S5F Zithyjc a sin. rec. 1072 Zihjt 3a 1073 10 10! 0,020 0,027 0,035 0,051 0,082 0,103 10? oO 0,028 0,040 0,051 0,068 0,090 0,103 103 Fig. 4 Transient thermal impedance vs. time 600 A SKT 130 400 200 Tyj= 130 25 130 iy 6 vy O05 1 15 Fig. 6 a On-state characteristics 1800 w SKT 130 1000 Fray 0 Iay 100 200 300 25C 400 Fig. 7a Power dissipation vs. on-state current s 104 Vv 25 A 500 by SEMIKRON B3-25 cate RULcTEAbit ania Aim boomin mere / SEMIKRON INC 72 5-4/9 u5e 0 fj 613673 ooo1s34't ff fon attanlanaten kta 1500 'tlov) SKT 160 14000 1,2 500 08 06 Pray 0 04 1 2 TAV 100 300 400 500 A600 10 t 10 10 ms 103 Fig. 7b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time 3 2-SKT 1 Yl SKT 160 to! =] Ig2 345 2345 1w' 2 345 2348 Ato? Fig. 9 Gate trigger characteristics B3-26 by SEMIKRON ne) AN anne tnannlean ln 9d Din tte a cama