IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100C tSC 10s, TJ(max) = 150C G G VCE(ON) typ. = 1.7V @ IC = 10A E n-channel Applications E IRG8P15N120KDPbF TO247AC G Gate * Industrial Motor Drive * UPS * Solar Inverters * Welding C G C IRG8P15N120KDEPbF TO247AD C Collector Features E E Emitter Benefits Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 10s Short Circuit SOA Increases margin for short circuit protection scheme Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Square RBSOA and high ILM- rating Rugged Transient Performance Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type IRG8P15N120KDPbF IRG8P15N120KD-EPbF TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P15N120KDPbF IRG8P15N120KD-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1200 30 15 30 40 20 11 40 30 125 50 -40 to +150 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com (c) 2014 International Rectifier Min. --- --- --- --- Submit Datasheet Feedback Typ. --- --- 0.24 40 Max. 1.0 1.7 --- --- Units C/W November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 -- -- 1.1 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.7 Collector-to-Emitter Saturation Voltage VCE(on) -- 2.0 Gate Threshold Voltage 5.0 -- VGE(th) -- -16 VGE(th)/TJ Threshold Voltage Temperature Coeff. gfe Forward Transconductance -- 5.7 -- 1.0 ICES Collector-to-Emitter Leakage Current -- 1.0 Gate-to-Emitter Leakage Current -- -- IGES -- 2.1 Diode Forward Voltage Drop VF -- 2.4 Switching Characteristics @ TJ = 25C (unless otherwise specified) Min. -- -- -- -- -- -- -- -- -- -- -- Max. -- -- Units Conditions V VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1mA (25C-150C) 2.0 V IC = 10A, VGE = 15V, TJ = 25C -- IC = 10A, VGE = 15V, TJ = 150C 6.5 V VCE = VGE, IC = 400A -- mV/C VCE = VGE, IC = 400A (25C-150C) -- S VCE = 50V, IC = 10A, PW = 20s 30 A VGE = 0V, VCE = 1200V -- mA VGE = 0V, VCE = 1200V, TJ = 150C 100 nA VGE = 30V 2.7 V IF = 10A -- IF = 10A, TJ = 150C Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Typ. Max Units Conditions 65 98 IC = 10A 6.0 9.0 nC VGE = 15V VCC = 600V 40 60 0.6 -- 0.6 -- mJ IC = 10A, VCC = 600V, VGE=15V 1.2 -- RG = 10, TJ = 25C 15 -- Energy losses include tail & diode 20 -- ns reverse recovery 170 -- 200 -- 0.9 -- Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 -- -- s Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current -- -- -- 0.8 60 26 -- -- -- mJ ns A -- -- -- -- -- -- -- -- -- 1.1 2.0 15 20 250 330 1290 60 30 -- -- -- -- -- -- -- -- -- mJ ns pF FULL SQUARE IC = 10A, VCC = 600V, VGE=15V RG = 10, TJ = 150C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150C, IC = 40A VCC = 960V, Vp 1200V VGE = +20V to 0V TJ = 150C,VCC = 600V, Vp 1200V VGE = +15V to 0V TJ = 150C VCC = 600V, IF = 10A VGE = 15V, Rg = 10 Notes: VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF 30 For both: Duty cycle : 50% Tj = 150C Tcase = 100C Gate drive as specified Power Dissipation = 50W Load Current ( A ) 25 20 15 Square Wave: VCC 10 I 5 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC (A) 100sec 1 IC (A) 10sec 10 10 1msec DC 0.1 Tc = 25C Tj = 150C Single Pulse 1 0.01 1 10 100 1000 10 10000 100 Fig. 2 - Forward SOA TC = 25C; TJ 150C; VGE = 15V Fig. 3 - Reverse Bias SOA TJ = 150C; VGE = 20V 100 10 10 ICE (A) ICE (A) 100 0.1 0.1 0 2 4 6 8 10 V CE (V) Fig. 4 - Typ. IGBT Output Characteristics TJ = 25C; tp = 20s www.irf.com Tc = -40C Tc = 25C Tc = 150C 1 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1.0 10000 VCE (V) VCE (V) 3 1000 (c) 2014 International Rectifier 0 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Saturation Voltage VGE = 15V; tp = 20s Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF 100 VGE, Gate-to-Emitter Voltage (V) 16 ICE (A) 10 1 TJ = -40C TJ = 25C TJ = 150C 0.1 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 4 6 8 10 12 14 16 0 20 40 60 V GE (V) Q G, Total Gate Charge (nC) Fig. 6 - Typ. Transfer Characteristics VCE = 50V; tp = 20s Fig. 7 - Typical Gate Charge vs. VGE ICE = 10A 2.5 1000 EOFF @ Tj = 150C 2.0 tdOFF ERR @ Tj = 150C 1.5 Swiching Time (ns) Energy (mJ) tF EON @ Tj = 150C EOFF @ Tj = 25C EON @ Tj = 25C ERR @ Tj = 25C 1.0 100 tR 10 tdON 0.5 1 0.0 2 4 6 8 10 12 14 16 18 0 20 4 8 1000 EON @ Tj = 150C tdOFF 1.5 EON @ Tj = 25C EOFF @ Tj = 25C ERR @ Tj = 25 Swiching Time (ns) Energy (mJ) EOFF @ Tj = 150C ERR @ Tj = 150C 20 Fig. 9 - Typ. Switching Time vs. IC TJ = 150C; VCE = 600V, RG = 10; VGE = 15V Fig. 8 - Typ. Energy Loss vs. IC VCE = 600V, RG = 10; VGE = 15V 2.0 16 IC (A) IC (A) 2.5 12 1.0 tF 100 tdON tR 10 0.5 1 0.0 8 16 24 32 40 48 56 Rg () Fig. 10 - Typ. Energy Loss vs. RG VCE = 600V, ICE = 10A; VGE = 15V 4 www.irf.com (c) 2014 International Rectifier 8 16 24 32 40 48 56 RG ( ) Fig. 11 - Typ. Switching Time vs. RG TJ = 150C; VCE = 600V, ICE = 10A; VGE = 15V Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF 1200 30 IRR (A) 26 Tj = 150C VGE = 15V 1000 IF = 10A R G = 10 24 R G = 22 RG = 10 900 800 R G = 20 RG = 10 RG = 22 RG = 47 1100 Energy (J) 28 VCC = 600V 700 R G = 600 18 500 16 600 700 800 4 900 1000 1100 1200 1300 8 12 16 20 IF (A) diF /dt (A/s) Fig. 12 - Typ. IRR vs. di/dt Fig. 13 - Typ. Diode ERR vs. IF TJ = 150C 100 10 IF (A) -40C 25C 150C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V F (V) Fig. 14 - Typ. Diode Forward Voltage Drop Characteristics 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 0.01 R1 R1 J 1 R3 R3 R4 R4 C 2 1 3 2 4 3 C 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 Ri (C/W) i (sec) 0.05998 0.000058 0.30139 0.000138 0.38387 0.002914 0.25341 0.020999 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.04595 0.000029 0.57951 0.000372 0.67140 0.004176 0.40462 0.047311 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF L L 0 80 V + VCC DUT - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit (Board Stray Inductance 180nH) C force 100K D1 22K C sense G force DUT 0.0075F E sense E force Fig.C.T.5 - BVCES Filter Circuit 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF 800 80 VCE 70 600 60 500 50 Vce (V) 400 40 ICE 300 30 200 20 100 10 0 Ice (A) 700 0 -100 -10.00 0.00 10.00 -10 20.00 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150C using Fig. CT.3 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 IRG8P15N120KDPbF/IRG8P15N120KD-EPbF Qualification Information Industrial Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) N/A TO-247AD N/A Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 4, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRG8P15N120KD-EPBF IRG8P15N120KDPBF