Revision Date: 09/23/05
Silicon Step Recovery Diodes
Description
The diodes feature fully passivated, true mesa construction for
sharp transitions and improved stability. The beam lead SRDs
have the industry’s fastest transition times for millimeter wave
multiplication and picosecond pulse forming.
Features
• Output combs to 40+ GHz
• Transition times down to 35 ps
• Screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings (Chip and Beam Lead)
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 50 mA (Beam Lead)
150 mA ( Chip )
Power Dissipation 150 °C / JC at THSK = +25 °C
Derate linearly to zero at THSK = +175 °C
Junction Temperature -65 °C to +175 °C
Storage Temperature -65 °C to +175 °C
Mounting / Bonding Temperature +235 °C for 10 seconds (Beam Lead)
+310 °C for 30 seconds (Chip)
Chip and Beam Lead
Model
VBR CJCJttttFCO
TYP
GHz
JC
MAX
°C/W
Package
MIN
V
MIN
pF
MAX
pF
MIN
ns
TYP
ns
TYP
ps
MAX
ps
MMDB30-B11 14 0.15 0.25 1.0 4.0 30 38 530 600 B11
MMDB35-B11 16 0.13 0.20 1.0 4.0 35 45 482 600 B11
MMDB45-B11 25 0.11 0.20 3.0 8.0 45 58 410 600 B11
MMD805-C12 60 2.5 3.5 80 100 250 300 130 15 C12
MMD810-C12 50 1.5 2.5 40 70 200 250 200 22 C12
MMD820-C12 40 1.0 1.7 30 60 80 100 390 25 C12
MMD830-C11 25 0.5 1.0 15 30 60 80 700 45 C11
MMD832-C11 20 0.4 0.8 10 15 60 80 660 50 C11
MMD835-C11 15 0.3 0.7 10 20 60 70 800 60 C11
MMD837-C11 20 0.2 0.4 5 10 60 70 1,300 60 C11
MMD840-C11 15 0.2 0.4 7 15 60 70 880 60 C11
Test Conditions IR =
10 A
VR = 6 V
F = 1 MHz
IF = 10 mA
IR = 6 mA
Measured at
50% Recovery
IF = 3 mA
VR = 7 V
IF = 10 mA
VR = 10 V
FCO =
1 / 2 RS
Aerofl ex / Metelics, Inc.
www.aerofl ex-metelics.com
2
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Transistion Time vs. Drive
Transistion Time vs. Forward Current
Absolute Maximum Ratings (Ceramic Packaged)
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 50 mA (MMDB)
150 mA ( MMD )
Power DIssipation See individual detailed data sheet
Junction Temperature -65 °C to +175 °C
Storage Temperatuire -65 °C to +175 °C
Soldering Temperature +260 °C peak per JEDEC J-STD-20C
tt (ps)
IF (mA)
tt (ps)
Drive (pC)
0 200 400 600 800 1000 1200 1400 1600 1800
150
100
50
0
830 = 30ns
835 = 18ns
840 = 13ns
810 = 86ns
820 = 78ns
0 1 2 3 4 5 6 7 8 9 10
100
90
80
70
60
50
40
30
20
10
0
MMDB35
MMDB30
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3
Silicon Step Recovery Diodes
Revision Date: 09/23/05
Ceramic Packaged
Model
VBR CJCJttttCP
TYP
pF
LP
TYP
pF
Package
MIN
V
MIN
pF
MAX
pF
MIN
ns
TYP
ns
TYP
ps
MAX
ps
MMD805-E28 / 28X 60 3.1 3.6 80 100 250 300 0.08 0.4 E28 / 28X
MMD805-H20 60 3.2 3.7 80 100 250 300 0.18 0.5 H20
MMD805-T86 60 3.2 3.7 80 100 250 300 0.18 1.0 T86
MMD805-T89 60 3.3 3.8 80 100 250 300 0.25 0.4 T89
MMD805-0805-2 60 3.1 3.6 80 100 250 300 0.06 0.4 0805-2
MMD810-E28 / 28X 50 2.1 2.6 40 70 200 250 0.08 0.4 E28 / 28X
MMD810-H20 50 2.2 2.7 40 70 200 250 0.18 0.5 H20
MMD810-T86 50 2.2 2.7 40 70 200 250 0.18 1.0 T86
MMD810-T89 50 2.3 2.8 40 70 200 250 0.25 0.4 T89
MMD820-E28 / 28X 40 1.4 1.8 30 60 80 100 0.08 0.4 E28 / 28X
MMD820-H20 40 1.5 1.9 30 60 80 100 0.18 0.5 H20
MMD820-T86 40 1.5 1.9 30 60 80 100 0.18 1.0 T86
MMD820-0805-2 40 1.4 1.8 30 60 80 100 0.06 0.4 805-2
MMD830-E28 / 28X 25 0.83 1.1 15 30 60 80 0.08 0.4 E28 / 28X
MMD830-H20 25 0.93 1.2 15 30 60 80 0.18 0.5 H20
MMD830-T86 25 0.93 1.2 15 30 60 80 0.18 1.0 T86
MMD830-0805-2 25 0.81 1.1 15 30 60 80 0.06 0.4 805-2
MMD832-E28 / 28X 20 0.68 0.9 10 15 60 80 0.08 0.4 E28 / 28X
MMD832-H20 20 0.78 1.0 10 15 60 80 0.18 0.5 H20
MMD832-T86 20 0.78 1.0 10 15 60 80 0.18 1.0 T86
MMD832-0805-2 20 0.66 0.88 10 15 60 80 0.06 0.4 805-2
MMD835-E28 / 28X 15 0.58 0.81 10 20 50 70 0.08 0.4 E28 / 28X
MMD835-H20 15 0.62 0.85 10 20 50 70 0.12 0.4 H27
MMD835-T86 15 0.68 0.91 10 20 50 70 0.18 1.0 T86
MMD835-0805-2 15 0.56 0.78 10 20 50 70 0.06 0.4 805-2
MMD837-E28 / 28X 20 0.38 0.51 5 10 50 70 0.08 0.4 E28 / 28X
MMD837-H27 20 0.42 0.55 5 10 50 70 0.12 0.4 H27
MMD837-T86 20 0.48 0.61 5 10 50 70 0.18 1.0 T86
MMD837-0805-2 20 0.36 0.48 5 10 50 70 0.06 0.4 805-2
MMD840-E28 / 28X 15 0.38 0.51 7 15 50 70 0.08 0.4 E28 / 28X
MMD840-H27 15 0.42 0.55 7 15 50 70 0.12 0.4 H27
MMD840-T86 15 0.48 0.61 7 15 50 70 0.18 1.0 T86
MMD840-0805-2 15 0.36 0.48 7 15 50 70 0.06 0.4 0805-2
MMDB30-E28 / 28X 14 0.28 0.36 1.0 4.0 30 38 0.08 0.4 E28 / 28X
MMDB30-0402 14 0.25 0.32 1.0 4.0 30 38 0.05 0.2 0402
MMDB30-0805-2 14 0.26 0.33 1.0 4.0 30 38 0.06 0.4 0805-2
MMDB35-E28 / 28X 16 0.25 0.31 1.0 4.0 35 45 0.08 0.4 E28 / 28X
MMDB35-T86 16 0.22 0.28 1.0 4.0 35 45 0.05 0.2 0402
MMDB35-0805-2 16 0.23 0.29 1.0 4.0 35 45 0.06 0.4 0805-2
MMDB45-E28 / 28X 25 0.24 0.31 3.0 8.0 45 58 0.08 0.4 E28 / 28X
MMDB45-T86 25 0.21 0.28 3.0 8.0 45 58 0.05 0.2 0402
MMDB45-0805-2 25 0.22 0.29 3.0 8.0 45 58 0.06 0.4 0805-2
Test Conditions IR =
10 A
VR = 6 V
F = 1 MHz
IF = 10 mA
IR = 6 mA
Measured at
50% Recovery
IF = 10 mA
VR = 10 V
IF = 3 mA
VR = 7 V
F = 1 MHz
Aerofl ex / Metelics, Inc.
www.aerofl ex-metelics.com
4
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Absolute Maximum Ratings (Glass Packaged)
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 100 mA
Thermal Resistance, Junction to Case 600 °C / W
Junction Temperature -65 °C to +200 °C
Storage Temperature -65 °C to +200 °C
Soldering Temperature +230 °C for 10 seconds
Glass Packaged
Model
VBR CJCTttttCP
TYP
pF
LP
TYP
nH
Package
MIN
V
MAX
pF
TYP
pF
MIN
ns
TYP
ns
TYP
ps
MAX
ps
MMD0151 15 0.65 0.55 10 15 100 - - - 0.15 2.5 A15
MMD0153 25 0.40 0.40 10 15 95 - - - 0.15 2.5 A15
MMD0803 70 6.0 4.0 200 250 275 400 0.15 2.5 A15
MMD0815 50 4.0 3.0 100 135 180 320 0.15 2.5 A15
MMD0825 45 2.0 1.0 30 50 130 160 0.15 2.5 A15
MMD0833 25 1.6 1.65 10 15 90 - - - 0.15 2.5 A15
MMD0840 15 0.60 0.60 10 20 75 - - - 0.15 2.5 A15
Test Conditions IR =
10 A
VR = 6 V
VR = 10 V
F = 1 MHz
IF = 10 mA
IR = 6 mA
Measured at
50% Recovery
IF = 10 mA
VR = 10 V
Chip data,
package limited
to 100 ps
F = 1 MHz
Outline Drawing
A15
]
23.4[07
1]18.3[051
]39.1[67 ]37.1[86
.
n
iM]4.
52[0001 s
lP
2
]14.
0[61 ]63.0
[
41 dnaBedohtaC
.aiD
Aerofl ex / Metelics, Inc.
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5
Silicon Step Recovery Diodes
Revision Date: 09/23/05
Model Confi guration
VBR CJCJtttt
Package
MIN
V
MIN
pF
MAX
pF
MIN
ns
TYP
ns
TYP
ps
MAX
ps
SMMD805-SOT23 -0S, 1S 60 2.5 3.5 80 100 250 300 SOT23
SMMD810-SOT23 -0S, 1S 50 1.5 2.5 40 70 200 250 SOT23
SMMD820-SOT23 -0S, 1S 40 1.0 1.7 30 60 110 125 SOT23
SMMD830-SOT23 -0S, 1S 25 0.5 1.0 15 30 90 110 SOT23
SMMD832-SOT23 -0S, 1S 20 0.4 0.8 10 20 85 100 SOT23
SMMD835-SOT23 -0S, 1S 20 0.3 0.7 10 15 80 100 SOT23
SMMD837-SOT23 -0S, 1S 20 0.2 0.4 5 12 75 90 SOT23
SMMD840-SOT23 -0S, 1S 15 0.2 0.4 5 10 70 90 SOT23
SMMD805-SOD323 - - - 60 2.5 3.5 80 100 250 300 SOD323
SMMD810-SOD323 - - - 50 1.5 2.5 40 70 200 250 SOD323
SMMD820-SOD323 - - - 40 1.0 1.7 30 60 110 125 SOD323
SMMD830-SOD323 - - - 25 0.5 1.0 15 30 90 110 SOD323
SMMD832-SOD323 - - - 20 0.4 0.8 10 20 85 100 SOD323
SMMD835-SOD323 - - - 20 0.3 0.7 10 15 80 100 SOD323
SMMD837-SOD323 - - - 20 0.2 0.4 5 12 75 90 SOD323
SMMD840-SOD323 - - - 15 0.2 0.4 5 10 70 90 SOD323
Test Conditions IR = 10 A VR = 6 V
F = 1 MHz
IF = 10 mA
IR = 6 mA
Measured at
50% Recovery
IF = 10 mA
VR = 10 V
Configuration Code
Absolute Maximum Ratings (Plastic Packaged)
Parameters Rating
Reverse Voltage Rated VBR
Forward Current 100 mA
Power Dissipation 250 mW, Derate linearly to zero at TA = +150 °C
Operating Temperature -65 °C to +150 °C
Storage Temperature -65 °C to +150 °C
Soldering Temperature +260 °C peak per JEDEC J-STD-20C
-0S -1S
Plastic Packaged
Aerofl ex / Metelics, Inc.
www.aerofl ex-metelics.com
6
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Outline Drawings
B11 C11 / C12
H20 T86
E28 E28X
ed
oh
taC
]561.0[5
.
6]411.0[5.4 ]310.0[5.0 ]500.0[2.0
]980.0[5
.
3]
830
.
0
[5.
1
]
97
2.0[
1
1]871.
0
[7
]653.0[41 ]452.0[01
]109.0[5.53 ]6
28
.
0
[
5
.2
3kcaB
weiV
k
caB
]
3
1
4
.2
[
5
9]951.2[58
]072
.1[
05 ]
6
10
.
1[
04
]536.0[52 ]183.0[51
]045.2[001 slP2.niM .xaM]072.1[05
yxopE cim
ar
eC
]721.0[5 ]670.0[3
.
xa
M
]653.0[41
e
d
o
ht
a
C
si
d
ae
l
t
uC
]125.4[871 ]511.4[261
]314.
2[59 ]951.2[5
8
]536.0[52 ]183.0[51
]0
7
2.
1
[05 ]610.1[04
.xaM]267.0[03
]805.0[02 ]45
2.
0
[
01
]267.0[03 ]
8
05
.
0[
0
2]302.0[8 ]201.0[4
]183.0[51 ]
3
0
2.
0[8
yxopE
cimareC
toDedohtaC
]195.
2
[201 ]7
50.2[
18
]485.0
[3
2]234
.
0[
71
ai
D
]246.2[401 ]
733.
2
[29 er
au
q
S]
2
03.3[03
1s
lP2.
n
iM
]25
1
.0[
6]670
.
0
[3
]988
.
0
[53 ]
536.0[52
]
3
02.0[8 ]201.0[4
edohtaCsi
d
ae
l
tu
C
124 [3.150] Dia.
118 [2.997]
27 [0.686] Max.
64 [1.626] Dia.
60 [1.524]
83 [2.108] Dia.
77 [1.956]
64 [1.626]
60 [1.524]
Ceramic
Body
64 [1.626]
60 [1.524]
225 [5.715]
205 [5.207]
Cathode (T86)
Anode (T86p)
Aerofl ex / Metelics, Inc.
www.aerofl ex-metelics.com
7
Silicon Step Recovery Diodes
Revision Date: 09/23/05
Outline Drawings
T89 0805-2
SOT23 SOD323
0402 H27
33 [0.838] Max.
44 [1.118]
36 [0.914]
13 [0.330]
11 [0.279]
24 [0.610]
16 [0.406]
Epoxy
Ceramic
Cathode Dot
85 [2.159]
75 [1.905]
55 [1.397]
45 [1.143]
Epoxy
Cathode Dot
33 [0.838]
27 [0.686]
16 [0.406]
12 [0.305]
40 [1.016] Min.
50 [1.270] Max.
Gold Metalization
Bottom View
Ceramic
72 [1.829]
65 [1.651]
23 [0.584]
17 [0.432]
Dia
75 [1.905]
65 [1.651]
Square 130 [3.302]
Min. 2 Pls
6 [0.152]
3 [0.076]
35 [0.889]
25 [0.635]
8 [0.203]
4 [0.102]
Cut lead is Cathode
106 [2.692]
94 [2.388]
75 [1.905]
63 [1.600]
16 [0.406]
10 [0.254]
57 [1.448]
45 [1.143]
43 [1.092]
34 [0.864]
6 [0.152]
3 [0.076]
4 [0.102]
3 [0.076]
Cathode Strip
]29
0.
1[3
4]468.0[43
]251.0[6 ]67
0
.0[
3
]2
0
1.0[4 ]670.0[3 weiVediS
]7
9
3.1[
5
5]491.1[74
]984.
2[
89 ]801.2[38
]335.0[12 ]
4
52.
0[
01
LC
]840.3[021 ]766.2[501
]452.0[01 ]721.0[5 ]700.2[97 ]308.1[17
]955.0[22 ]234.0[71
3
12
Ceramic
Body
80 [2.032]
124 [3.150] Dia.
119 [3.023]
27 [0.686] Max.
#3-48 UNC-2A
Thread
Heat Sink is Cathode
138 [3.505]
126 [3.200]
212 [5.385]
185 [4.699]
11 [0.279] Max.
65 [1.651]
55 [1.397]
105 [2.667] Dia.
100 [2.540]
Aerofl ex / Metelics
Aerofl ex Microelectronic Solutions
975 Stewart Drive, Sunnyvale, CA 94085
TEL: 408-737-8181
Fax: 408-733-7645
www.aerofl ex-metelics.com sales@aerofl ex-metelics.com
Aerofl ex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aerofl ex or an
authorized sales representative to verify that the information in this data
sheet is current before using this product. Aerofl ex does not assume any
responsibility or liability arising out of the application or use of any product
or service described herein, except as expressly agreed to in writing by
Aerofl ex; nor does the purchase, lease, or use of a product or service from
Aerofl ex convey a license under any patent rights, copyrights, trademark
rights, or any other of the intellectual rights of Aerofl ex or of third parties.
Copyright 2003 Aerofl ex / Metelics. All rights reserved.
Our passion for performance is defi ned by three
attributes represented by these three icons:
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Revision Date: 09/23/05 A17037(-)
Silicon Step Recovery Diodes
Transition Time Test Circuit
Pulse
Generator
tr < 100 ps 6 dB
VR
0 V
Bias
Power
Supply
Bias
Tee
DUT 10 dB Sampling
Oscilloscope
Tt (90% to 33%) and
Corrected for System
Rise T ime
IF
