AP02N90H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching Characteristics BVDSS RDS(ON) ID D 900V 7.2 1.9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 900 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 1.9 A ID@TC=100 Continuous Drain Current, V GS @ 10V 1.2 A 6 A 62.5 W 0.5 W/ 2 W 18 mJ 1.9 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor PD@TA=25 Total Power Dissipation 4 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 4 Value Units 2 /W 62.5 /W 110 /W 1 201008115 AP02N90H/J o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 900 - 0.8 - V V/ BVDSS/Tj VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.85A - - 7.2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1.9A - 2 - S IDSS Drain-Source Leakage Current BVDSS Drain-Source Breakdown Voltage Min. 3 VDS=900V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=720V, VGS=0V - - 100 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=1.9A - 12 20 nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=540V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.7 - nC 3 td(on) Turn-on Delay Time VDD=450V - 10 - ns tr Rise Time ID=1.9A - 5 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 18 - ns tf Fall Time RD=236 - 9 - ns Ciss Input Capacitance VGS=0V - 630 1000 pF Coss Output Capacitance VDS=25V - 40 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 4 - pF Min. Typ. IS=1.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=1.9A, VGS=0V, - 360 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 1.8 - C Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 , IAS=1.9A. 3.Pulse test 2 4.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP02N90H/J 2.0 1.25 10V 8.0V 6.0V 5.0V T C =25 C ID , Drain Current (A) 1.6 10V 8.0V 6.0V 5.0V V G =4.5V o T C =150 C 1.00 ID , Drain Current (A) o 1.2 0.8 V G =4.5V 0.75 0.50 0.25 0.4 0.00 0.0 0 3 6 9 12 15 18 0 V DS , Drain-to-Source Voltage (V) 3 6 9 12 15 18 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D = 0.85 A V G =10V 2.4 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1.0 2.0 1.6 1.2 0.8 0.9 0.4 0.0 0.8 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C ) o Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 2.0 1.6 IS(A) T j =150 o C Normalized VGS(th) (V) 1.5 T j =25 o C 1.0 0.5 0.0 1.2 0.8 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j ,Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP02N90H/J f=1.0MHz 12 1000 C iss I D = 1.9 A V DS = 180 V V DS = 360 V V DS = 540 V VGS , Gate to Source Voltage (V) 10 100 C (pF) 8 6 4 C oss 10 C rss 2 1 0 0 4 8 12 1 16 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10.00 Normalized Thermal Response (Rthjc) 1 Operation in this area limited by RDS(ON) 100us ID (A) 1.00 1ms 10ms 100ms DC 0.10 o T C =25 C Single Pulse DUTY=0. 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 SINGLE 0.01 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4