VEMD1060X01
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Rev. 1.1, 30-Jun-16 1Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Silicon PIN Photodiode
DESCRIPTION
VEMD1060X01 is a high speed and high sensitive PIN
photodiode with a highly linear photoresponse. It is a low
profile surface mount device (SMD) including the chip with a
0.23 mm2 sensitive area detecting visible and near infrared
radiation.
FEATURES
• Package type: surface mount
• Package form: 0805 top view
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm2): 0.23
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Excellent Ira linearity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 70°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Small signal detection
• Proximity sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)
VEMD1060X01 1.8 ± 70 350 to 1070
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR20 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +110 °C
Storage temperature range Tstg -40 to +110 °C
Soldering temperature According to reflow solder profile Fig. 6 Tsd 260 °C
Thermal resistance junction / ambient According to EIA / JESD 51 RthJA 270 K/W
VEMD1060X01
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Rev. 1.1, 30-Jun-16 2Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF-0.91.1V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 - - V
Reverse dark current VR = 10 V, E = 0 Iro -0.015nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0 CD-3.8-pF
VR = 3 V, f = 1 MHz, E = 0 CD-1.7-pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo- 350 - mV
Temperature coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo --2.6-mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik-1.8-μA
Temperature coefficient of IkEe = 1 mW/cm2, λ = 835 nm TKIk -0.1-%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 1.4 1.8 3 μA
Ee = 1 mW/cm2, λ = 890 nm, VR = 5 V Ira -2.6-μA
Angle of half sensitivity ϕ-± 70-deg
Wavelength of peak sensitivity λp- 820 - nm
Range of spectral bandwidth λ0.1 - 350 to 1070 - nm
Rise time VR = 5 V, RL = 50 Ω, λ = 830 nm tr-60-ns
Fall time VR = 5 V, RL = 50 Ω, λ = 830 nm tf-80-ns
0.0001
0.001
0.01
0.1
1
10
100
-40 -20 0 20 40 60 80 100
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
VR= 10 V
0.6
0.8
1.0
1.2
1.4
-40-200 20406080100
Ira rel - Relative Reverse Light Current
Tamb - Ambient Temperature (°C)
835 nm
VR= 10 V
940 nm
865 nm
VEMD1060X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 3Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01
0.1
1
10
100
0.01 0.1 1 10
Ira - Reverse Light Current (μA)
Ee- Irradiance (mW/cm2)
VR= 5 V, λ= 950 nm
0.01
0.1
1
10
0.1 1 10 100
Ira - Reverse Light Current (μA)
VR- Reverse Voltage (V)
0.01 mW/cm
2
0.02 mW/cm
2
0.05 mW/cm
2
0.1 mW/cm
2
0.2 mW/cm
2
2.0 mW/cm
2
5.0 mW/cm
2
0.5 mW/cm
2
1.0 mW/cm
2
10 mW/cm
2
λ = 950 nm
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001 0.01 0.1 1 10 100
CD- Capacitance (pF)
VR- Reverse Voltage (V)
f = 1 MHz, E = 0
0
0.2
0.4
0.6
0.8
1.0
400 500 600 700 800 900 1000 1100
S(λ)rel - Relative Spectral Sensitivity
λ- Wavelength (nm)
Srel - Relative Radiant Sensitivity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ- Angular Displacement
VEMD1060X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 4Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 4, according to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
20018
VEMD1060X01
www.vishay.com Vishay Semiconductors
Rev. 1.1, 30-Jun-16 5Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters
REEL DIMENSIONS in millimeters
of the wheel is supplier specic.
Form of the leave open
Issue: 2; 26.04.10
Drawing-No.: 9.800-5096.01-4
specications
according to DIN
technical drawings
Ø 177.8 max.
Ø 55 min.
8.4 +2.5
8.4 +0.15
14.4 max.
Ø 13 + 0.5
- 0.2
1.5 min.
Ø 20.2 min.
Z
Z 2:1
20875
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Revision: 01-Jan-2021 1Document Number: 91000
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