silicon power transistors NPN 70-61 (isolated collector) (cont'd) lojwaxy = 5 to 20A Ver ajsus) = 60 to 350V fr = 20 to 40 MHz hi I t Veo | GrteMeet | Me | eM hce | dite LrePBocl auc |Site] a | SIL clit | cenerte | sonora CEO {SUS) tn-| fo C, = = Tsec Ss eneric enera. (Volts) a 4/V) A N) nk @v watts c/w) V) ( Hz) A @M Product information A/a) | WV @ 2/V) NOTES: 3 Verisat) @ Ic/le (V @ A/A) ea e NPN 10-82 4 ** ri le(aax} = 7.5 to 10A Versus) = 30 to 250V fr = 0.5 MHz hee Isfo ton @ Ic/Vce Yceisat) Vee icev Po @ @ Vce Ic/Ie torr . Vceojsus}} (Min-Max @ Ic/lp @ Ic/Vce @Vce_ [Tc=100C|] fsc |t=Asec| fr S ? @ Ic/Is Generic General Type # | (Volts) @ A/N) (V@ A/A) V@aA) (mA @ V) | (Watts) |(C/W)| (A @ V) | (MHz) A/A (us @ A/A Product Information 2N1015 30 | >10@2/4 1.5@2/.3 2@2/4 20@30 715 0.7 2N1016 High Power 2N1015A 60 | >10@2/4 1.5@2/.3 2@2/4 20@60 71.5 0.7 Family. Switch and 2N1015B{ 100 | >10@2/4 1.5@2/.3 2@2/4 20@100 715 07 200 x 200 Amplifier. 2N1015C |; 150 | >10@2/4 1.5@2/3 2@2/4 20@150 71,5 0.7 Mil Chip. Military 2N1015D} 200 | >10@2/4 1.@2/.3 2@2/4 20@200 71.5 0.7 Single Usage. 2N1015E{ 250 | >10@2/4 1.5@2/.3 2@2/4 20@250 715 0.7 Diffused 2N1016 30 >10@5/4 2.5@5/.75 2@5/4 20@30 71.5 0.7 Process. 2N1016A 60 | >10@5/4 2.5@5/.75 2@5/4 20@60 71.5 0.7 Clip Leads. 2N1016B) 100 | >10@5/4 2.5@5/.75 2@5/4 20@ 100 71.5 0.7 Case 540 2N1016C{ 150 | >10@5/4 2.5@5/.75 2@5/4 20@150 71.5 0.7 2N1016D/ 200 | >10@5/4 2.5@5/.75 2@5/4 20@200 71.5 0.7 aioe 250 | >10@5/4 2.5@5/.75 2@5/4 20@250 71.5 0.7 ypi Values 175 __ | 10-100@5/4 1.5@5/.75 18@5/4 5@175 15 0.7 3@50 0.8 6@5/1 13@5/1 2N2226 50 | 100-500@9/6 | 3.5@9/.15 4@9/6 20@50 100 0.5 2N2226 High Gain, 2N2227 100 | 100-500@9/6 | 3.5@9/.15 4@9/6 20@100 100 0.5 Family. High Power 2N2228 150 100-500@9/6 | 3.5@9/.15 4@9/6 20@150 100 0.5 2-170 x 170 [Amplifier 2N2229 200 100-500@9/6 | 3.5@9/.15 4@9/6 20@200 100 0.5 Mil Chips in jand Switch. 2N2230 50 | >350@8/6 3.5@9/.15 4@9/6 20@50 100 0.5 Darlington {Military 2N2231 100 | >350@8/6 3.5@9/.15 4@9/6 20@100 100 0.5 Configuration.|Usage. 2N2232 150 | >350@8/6 3.5@9/.15 4@9/6 20@150 100 0.5 Single 2N2233 200 | >350@8/6 3.5@9/.15 4@9/6 20@200 100 0.5 Diffused rocess. Typical Clip Leads. i Values 100 3.5@9/6 5@100 100 0.5 3@40 0.6 Case 540 NPN 10-63 | lopaax) = 10 to 30A Veeoisus) = 60 to 350V fr = 0.6 to 30 MHz @ ry Vv Vv I P, et etn t Cs CE 'CEISAT] BE CEV D CE CF IB OFF . Yceojsus}| (Min-Max @ \c/lp @ Ic/Vez g Voce Tc Pe Ged gic | t= sec fr (us e @ Ic/ls Generic General Type # (Volts) @ A/V) (V @ A/A) (V @ A/V) (mA @ V) (Watts) |(C/W)| (A @ V) | (MHz) A/A (us @ A/A) Product Information 2N2815 80 10-50@10/3 1.5@10/1.5 |2.59@10/1.5 | 2@80 100 1.0 0.6 |3.5@10/1.5] 12@10/1.5 }2N2815 Hign Current, 2N2816 100 10-50@10/3 1.5@10/1.5 {2: 100 1.0 0.6 13.5@10/1.5| 12@10/1.5 |Family. High Power 2N2817 150 10-50@10/3 1.5@10/1.5 |2. 1.0 0.6 |3.5@10/1.5| 12@10/1.5 |325 x 325 Switch and 2N2818 200 10-50@10/3 1.5@10/1.5 |2. 1.0 0.6 |3.5@10/1.5} 12@10/1.5 | Mil Chip. Amplifier. 2N2819 80 10-50@15/3 1.5@15/2.2 |2. 1.0 0.6 |3.5@15/2.2| 12@15/2.2 |Single Military 2N2820 100 10-50@15/3 1.5@15/2.2 | 2. 1.0 0.6 {3.5@15/2.2] 12@15/2.2 | Diffused Usage. 2N2821 150 10-50@15/3 1.5@15/2.2 | 2. 1.0 0.6 13.5 .2| 12@15/2.2 | Process. 2N2822 200 10-50@ 15/3 1.5@15/2.2 }2: 1.0 0.6 13.5 12@15/2.2 | Clip Leads. 2N2823 80 10-40@20/2 1.1@20/3 2. 1.0 0.6 13.5 12@20/3 [Case 530 2N2824 100 10-40@20/2 1.1@20/3 2. 1.0 0.6 13.5 12@20/3 2N2825 150 10-40@20/2 | 1.1@20/3 |2. 1.0 0.6 |3.5 12@20/3 ypita Values 125 0-100@1 1.2 1 1.0 0.6 (3 10@15/2.2 3 Veesat) @ Ic/lp (V @ A/A) is