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FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
1

N-Channel QFET® MOSFET
400 V, 30 A, 140 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.

30 A, 400 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,
ID = 15 A
Low Gate Charge (Typ. 90 nC)
Low Crss ( Typ. 60 pF)
100% Avalanche Tested



   
) ) (&& )
4 /+6781 %& '
/+,&&81 ,0 '
4  9  ,6& '
) :) ±%& )
; 9'!;  ,(&& <
4 '!  %& '
; *!'!;  60 <
!5 9=*!!5  ( 7 )5
99/+6781 60& >
"!678 6 %% >58
 * 77?,7& 8
@
,5A7 %&& 8
  FQA30N40 
*θ Thermal Resistance, Junction-to-Case, Max. & (% 8>
*θ Thermal Resistance, Junction-to-Ambient, Max. (& 8>
TO-3PN
GDS
G
S
D
June 2014
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQA30N40 FQA30N40 TO-3PN --30
FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
2


)+%6&)4+%&'
)+,&)
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
      

B) B=) )+&)4+67&µ'(&&   )
B)
5
B=)
 4+67&µ'*678  & (  )58
4 C:) )+(&&))+&)   , µ'
)+%6&)+,678   ,& µ'
4 :B.= )+%&))+&)   ,&& '
4 :B.=*! )+%&))+&)   ,&& '

) :) )+)4+67&µ'% & 7 & )
* 
* )+,&)4+,7'  & ,&D & ,(
  )+7&)4+,7'  6& 

 4 )+67))+&)
+, &E#

 %(&& ((&& 
   7A& D7& 
 *!  2& A& 

  )+6&&)4+%&'
*+67
 A& ,D& 
*  %6& 27& 
   ,0& %0& 
  ,D& %7& 
F:  0& ,6& 
F :  66  
F :  (2 

4@   %& '
4 @9   ,6& '
) ) )+&)4+%&'   , 7 )
 *!*! )+&)4+%&'
45+,&&'5µ
 %D&  
F *!*!  % 0  µ
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 30A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
3


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 
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
 !
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"
#$
%#&'
ZJC(t), Thermal Response [oC/W]
FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
4
     
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     
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

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%
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"
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
®
FQA30N40 — N-Channel QFET MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
6
Mechanical Dimensions
FQA30N40 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
7
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
©2000 Fairchild Semiconductor Corporation
FQA30N40 Rev. C2
www.fairchildsemi.com
8
FQA30N40 N-Channel QFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
仙童
®
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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Rev. I68
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