P4SMA SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features For surface mounted application in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min Typical IR less than 1uA above 10V High temperature soldering guaranteed: 260 / 10 seconds at terminals Plastic material used carried Underwriters Laboratory Flammability Classification 94V-0 400 watts peak pulse power capability with a 10 / 1000 us waveform Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: Molded plastic Terminals: Pure tin plated, lead free XXX = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 12mm tape per EIA Std RS-481 Y = Year Weight: 0.064 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Type Number Symbol Value Unit Peak Power Dissipation at TA=25, Tp=1ms(Note 1) PPK 400 Watts Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)(Note 2) IFSM 40 Amps VF 3.5 Volts TJ, TSTG -55 to +150 Maximum Instantaneous Forward Voltage at 25.0A for Unidirectional Only Operating and Storage Temperature Range Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25 Per Fig. 2 Note 2: Mounted on 5 x 5mm Copper Pads to Each Terminal Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P4SMA6.8 through Types P4SMA200A 2. Electrical Characterstics Apply in Both Directions Version:G11 RATINGS AND CHARACTERISTIC CURVES (P4SMA SERIES) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 TA = 25 10 1 125 100 75 50 25 0 0.1 0.1 1 10 100 1000 0 10000 FIG. 3 CLAMPING POWER PULSE WAVEFORM 120 Peak Value IPPM 100 Half Value-IPPM/2 10/1000usec, WAVEFORM as DEFINED by R.E.A. 80 50 75 100 125 150 175 200 FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 50 PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM tr=10usec IFSM, PEAK FORWARD SURGE A CURRENT (A) PEAK PULSE CURRENT (%) 140 25 TA, AMBIENT TEMPERATURE (oC) tp, PULSE WIDTH, (uS) 60 40 20 8.3mS Single Half Sine Wave JEDEC Method 40 30 20 10 td 0 0 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms 0 1 10 NUMBER OF CYCLES AT 60 Hz CJ, JUNCTION CAPACITANCE (pF) A FIG. 5 TYPICAL JUNCTION CAPACITANCE 100000 10000 VR=0 1000 100 TA=25 f=1.0MHz Vsig=50mVp-p MEASURED at STAND-OFF VOLTAGE,Vwm 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) Version:G11 100 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Device Breakdown Voltage Test Stand-Off VBR (V) Current Voltage VWM Device Marking Code (Note 1) IT Min Max (mA) Maximum Maximum Maximum Maximum Reverse Leakage Peak Pulse Clamping Voltage Temperature @ VWM Current IPPM @ IPPM Coefficient (V) ID (uA) (A) (Note 2) Vc(V) of VBR(%/) P4SMA6.8 ADJ 6.12 7.48 10 5.50 1000 38.0 10.8 0.057 P4SMA6.8A AEJ 6.46 7.14 10 5.80 1000 40.0 10.5 0.057 P4SMA7.5 AFJ 6.75 8.25 10 6.05 500 35.0 11.7 0.061 P4SMA7.5A AGJ 7.13 7.88 10 6.40 500 37.0 11.3 0.061 P4SMA8.2 AHJ 7.38 9.02 10 6.63 200 33.0 12.5 0.065 P4SMA8.2A AKJ 7.79 8.61 10 7.02 200 34.0 12.1 0.065 P4SMA9.1 ALJ 8.19 10.00 1.0 7.37 50 30.0 13.8 0.068 P4SMA9.1A AMJ 8.65 9.55 1.0 7.78 50 31.0 13.4 0.068 P4SMA10 ANJ 9.00 11.00 1.0 8.10 10 28.0 15.0 0.073 P4SMA10A APJ 9.50 10.5 1.0 8.55 10 29.0 14.5 0.073 P4SMA11 AQJ 9.90 12.1 1.0 8.92 5.0 26.0 16.2 0.075 P4SMA11A ARJ 10.5 11.6 1.0 9.40 5.0 27.0 15.6 0.075 P4SMA12 ASJ 10.8 13.2 1.0 9.72 5.0 24.0 17.3 0.078 P4SMA12A ATJ 11.4 12.6 1.0 10.2 5.0 25.0 16.7 0.078 P4SMA13 AUJ 11.7 14.3 1.0 10.5 5.0 22.0 19.0 0.081 P4SMA13A AVJ 12.4 13.7 1.0 11.1 5.0 23.0 18.2 0.081 P4SMA15 AWJ 13.5 16.5 1.0 12.1 5.0 19.0 22.0 0.084 P4SMA15A AXJ 14.3 15.8 1.0 12.8 5.0 20.0 21.2 0.084 P4SMA16 AYJ 14.4 17.6 1.0 12.9 5.0 17.8 23.5 0.086 P4SMA16A AZJ 15.2 16.8 1.0 13.6 5.0 18.6 22.5 0.086 P4SMA18 BDJ 16.2 19.8 1.0 14.5 5.0 16.0 26.5 0.088 P4SMA18A BEJ 17.1 18.9 1.0 15.3 5.0 16.5 25.5 0.088 P4SMA20 BFJ 18.0 22.0 1.0 16.2 5.0 14.0 29.1 0.090 P4SMA20A BGJ 19.0 21.0 1.0 17.1 5.0 15.0 27.7 0.090 P4SMA22 BHJ 19.8 24.2 1.0 17.8 5.0 13.0 31.9 0.092 P4SMA22A BKJ 20.9 23.1 1.0 18.8 5.0 13.7 30.6 0.092 P4SMA24 BLJ 21.6 26.4 1.0 19.4 5.0 12.0 34.7 0.094 P4SMA24A BMJ 22.8 25.2 1.0 20.5 5.0 12.6 33.2 0.094 P4SMA27 BNJ 24.3 29.7 1.0 21.8 5.0 10.7 39.1 0.096 0.096 P4SMA27A BPJ 25.7 28.4 1.0 23.1 5.0 11.0 37.5 P4SMA30 BQJ 27.0 33.0 1.0 24.3 5.0 9.6 43.5 0.097 P4SMA30A BRJ 28.5 31.5 1.0 25.6 5.0 10.0 41.4 0.097 P4SMA33 BSJ 29.7 36.3 1.0 26.8 5.0 8.8 47.7 0.098 P4SMA33A BTJ 31.4 34.7 1.0 28.2 5.0 9.0 45.7 0.098 P4SMA36 BUJ 32.4 39.6 1.0 29.1 5.0 8.0 52.0 0.099 P4SMA36A BVJ 34.2 37.8 1.0 30.8 5.0 8.4 49.9 0.099 P4SMA39 BWJ 35.1 42.9 1.0 31.6 5.0 7.4 56.4 0.100 P4SMA39A BXJ 37.1 41.0 1.0 33.3 5.0 7.7 53.9 0.100 P4SMA43 BYJ 38.7 47.3 1.0 34.8 5.0 6.7 61.9 0.101 P4SMA43A BZJ 40.9 45.2 1.0 36.8 5.0 7.0 59.3 0.101 P4SMA47 CDJ 42.3 51.7 1.0 38.1 5.0 6.2 67.8 0.101 P4SMA47A CEJ 44.7 49.4 1.0 40.2 5.0 6.4 64.8 0.101 P4SMA51 CFJ 45.9 56.1 1.0 41.3 5.0 5.7 73.5 0.102 P4SMA51A CGJ 48.5 53.6 1.0 43.6 5.0 6.0 70.1 0.102 P4SMA56 CHJ 50.4 61.6 1.0 45.4 5.0 5.2 80.5 0.103 P4SMA56A CKJ 53.2 58.8 1.0 47.8 5.0 5.4 77.0 0.103 P4SMA62 CLJ 55.8 68.2 1.0 50.2 5.0 4.7 89.0 0.104 P4SMA62A CMJ 58.9 65.1 1.0 53.0 5.0 5.0 85.0 0.104 P4SMA68 CNJ 61.2 74.8 1.0 55.1 5.0 4.2 98.0 0.104 P4SMA68A CPJ 64.6 71.4 1.0 58.1 5.0 4.5 92.0 0.104 P4SMA75 CQJ 67.5 82.5 1.0 60.7 5.0 3.8 108 0.105 P4SMA75A CRJ 71.3 78.8 1.0 64.1 5.0 4.0 103 0.105 P4SMA82 CSJ 73.8 90.2 1.0 66.4 5.0 3.5 118 0.105 P4SMA82A CTJ 77.9 86.1 1.0 70.1 5.0 3.7 113 0.105 P4SMA91 CUJ 81.9 100 1.0 73.7 5.0 3.2 131 0.106 P4SMA91A CVJ 86.5 95.5 1.0 77.8 5.0 3.3 125 0.106 Version:G11 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Device Breakdown Voltage Test Stand-Off VBR (V) Current Voltage VWM Device Marking Code (Note 1) IT Min Max (mA) Maximum Maximum Maximum Maximum Reverse Leakage Peak Pulse Clamping Voltage Temperature @ VWM Current IPPM @ IPPM Coefficient (V) ID (uA) (A) (Note 2) Vc(V) P4SMA100 CWJ 90 110 1.0 81.0 5.0 2.9 144 0.106 P4SMA100A CXJ 95 105 1.0 85.5 5.0 3.0 137 0.106 P4SMA110 CYJ 99 121 1.0 89.2 5.0 2.6 158 0.107 P4SMA110A CZJ 105 116 1.0 94.0 5.0 2.7 152 0.107 P4SMA120 RDJ 108 132 1.0 97.2 5.0 2.4 173 0.107 P4SMA120A REJ 114 126 1.0 102.0 5.0 2.5 165 0.107 P4SMA130 RFJ 117 143 1.0 105.0 5.0 2.2 187 0.107 P4SMA130A RGJ 124 137 1.0 111.0 5.0 2.3 179 0.107 P4SMA150 RHJ 135 165 1.0 121.0 5.0 1.9 215 0.108 P4SMA150A RKJ 143 158 1.0 128.0 5.0 2.0 207 0.108 P4SMA160 RLJ 144 176 1.0 130.0 5.0 1.8 230 0.108 P4SMA160A RMJ 152 168 1.0 136.0 5.0 1.9 219 0.108 P4SMA170 RNJ 153 187 1.0 138.0 5.0 1.7 244 0.108 P4SMA170A RPJ 162 179 1.0 145.0 5.0 1.8 234 0.108 P4SMA180 RQJ 162 198 1.0 146.0 5.0 1.6 258 0.108 P4SMA180A RRJ 171 189 1.0 154.0 5.0 1.7 246 0.108 P4SMA200 RSJ 180 220 1.0 162.0 5.0 1.4 287 0.108 P4SMA200A RTJ 190 210 1.0 171.0 5.0 1.51 274 0.108 of VBR(%/) Notes: 1. VBR measure after I T applied for 300us, I T=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. For bipolar types having V WM of 10 volts and under, the I D limit is doubled. 4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Version:G11