creat by art
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Typical IR less than 1uA above 10V
XXX = Specific Device Code
G = Green Compound
Y = Year
M = Work Month
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Symbol Unit
PPK Watts
TJ, TSTG
VF3.5 Volts
400
Value
Packaging: 12mm tape per EIA Std RS-481
For surface mounted application in order to optimize
board space
Fast response time: Typically less than 1.0ps from
0 volt to BV min
High temperature soldering guaranteed:
260 / 10 seconds at terminals
Plastic material used carried Underwriters
Laboratory Flammability Classification 94V-0
Features
Polarity: Indicated by cathode band
Mechanical Data
Terminals: Pure tin plated, lead free
Case: Molded plastic
400 watts peak pulse power capability with a 10 /
1000 us waveform
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Weight: 0.064 gram
Type Number
Operating and Storage Temperature Range
Peak Power Dissipation at TA=25, Tp=1ms(Note 1)
Devices for Bipolar Applications
Version:G11
1. For Bidrectional Use C or CA Suffix for Types P4SMA6.8 through Types P4SMA200A
P4SMA SERIES
400 Watts Suface Mount Transient Voltage Suppressor
Marking Diagram
SMA/DO-214AC
Dimensions in inches and (millimeters)
2. Electrical Characterstics Apply in Both Directions
-55 to +150
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method)(Note 2) IFSM
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25 Per Fig. 2
Note 2: Mounted on 5 x 5mm Copper Pads to Each Terminal
40 Amps
Maximum Instantaneous Forward Voltage at 25.0A for
Unidirectional Only
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
Version:G11
RATINGS AND CHARACTERISTIC CURVES (P4SMA SERIES)
FIG.2 PULSE DERATING CURVE
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (oC)
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
0
10
20
30
40
50
1 10 100
NUMBER OF CYCLES AT 60 Hz
IFSM, PEAK FORWARD SURGE A
CURRENT (A)
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 3 CLAMPING POWER PULSE WAVEFORM
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5 4
t, TIME ms
PEAK PULSE CURRENT (%)
td
Peak Value
IPPM
tr=10usec
Half Value-IPPM/2
10/1000usec, WAVEFORM
as DEFINED by R.E.A.
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10
100
1000
10000
100000
1 10 100
V(BR), BREAKDOWN VOLTAGE (V)
CJ, JUNCTIO N CAPACITANCE (pF) A
TA=25
f=1.0MHz
Vsig=50mVp-p
VR=0
MEASURED at
STAND-OFF
VOLTAGE,Vwm
FIG. 1 PEAK PULSE POWER RATING CURVE
0.1
1
10
100
0.1 1 10 100 1000 10000
tp, PULSE WIDTH, (uS)
PPPM, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltag
e
Temperature
IT VWM @ VWM Current IPPM @ IPPM Coefficient
Min Max (mA) (V) ID (uA) (A) (Note 2) Vc(V) of VBR(%/)
P4SMA6.8 ADJ 6.12 7.48 10 5.50 1000 38.0 10.8 0.057
P4SMA6.8A AEJ 6.46 7.14 10 5.80 1000 40.0 10.5 0.057
P4SMA7.5 AFJ 6.75 8.25 10 6.05 500 35.0 11.7 0.061
P4SMA7.5A AGJ 7.13 7.88 10 6.40 500 37.0 11.3 0.061
P4SMA8.2 AHJ 7.38 9.02 10 6.63 200 33.0 12.5 0.065
P4SMA8.2A AKJ 7.79 8.61 10 7.02 200 34.0 12.1 0.065
P4SMA9.1 ALJ 8.19 10.00 1.0 7.37 50 30.0 13.8 0.068
P4SMA9.1A AMJ 8.65 9.55 1.0 7.78 50 31.0 13.4 0.068
P4SMA10 ANJ 9.00 11.00 1.0 8.10 10 28.0 15.0 0.073
P4SMA10A APJ 9.50 10.5 1.0 8.55 10 29.0 14.5 0.073
P4SMA11 AQJ 9.90 12.1 1.0 8.92 5.0 26.0 16.2 0.075
P4SMA11A ARJ 10.5 11.6 1.0 9.40 5.0 27.0 15.6 0.075
P4SMA12 ASJ 10.8 13.2 1.0 9.72 5.0 24.0 17.3 0.078
P4SMA12A ATJ 11.4 12.6 1.0 10.2 5.0 25.0 16.7 0.078
P4SMA13 AUJ 11.7 14.3 1.0 10.5 5.0 22.0 19.0 0.081
P4SMA13A AVJ 12.4 13.7 1.0 11.1 5.0 23.0 18.2 0.081
P4SMA15 AWJ 13.5 16.5 1.0 12.1 5.0 19.0 22.0 0.084
P4SMA15A AXJ 14.3 15.8 1.0 12.8 5.0 20.0 21.2 0.084
P4SMA16 AYJ 14.4 17.6 1.0 12.9 5.0 17.8 23.5 0.086
P4SMA16A AZJ 15.2 16.8 1.0 13.6 5.0 18.6 22.5 0.086
P4SMA18 BDJ 16.2 19.8 1.0 14.5 5.0 16.0 26.5 0.088
P4SMA18A BEJ 17.1 18.9 1.0 15.3 5.0 16.5 25.5 0.088
P4SMA20 BFJ 18.0 22.0 1.0 16.2 5.0 14.0 29.1 0.090
P4SMA20A BGJ 19.0 21.0 1.0 17.1 5.0 15.0 27.7 0.090
P4SMA22 BHJ 19.8 24.2 1.0 17.8 5.0 13.0 31.9 0.092
P4SMA22A BKJ 20.9 23.1 1.0 18.8 5.0 13.7 30.6 0.092
P4SMA24 BLJ 21.6 26.4 1.0 19.4 5.0 12.0 34.7 0.094
P4SMA24A BMJ 22.8 25.2 1.0 20.5 5.0 12.6 33.2 0.094
P4SMA27 BNJ 24.3 29.7 1.0 21.8 5.0 10.7 39.1 0.096
P4SMA27A BPJ 25.7 28.4 1.0 23.1 5.0 11.0 37.5 0.096
P4SMA30 BQJ 27.0 33.0 1.0 24.3 5.0 9.6 43.5 0.097
P4SMA30A BRJ 28.5 31.5 1.0 25.6 5.0 10.0 41.4 0.097
P4SMA33 BSJ 29.7 36.3 1.0 26.8 5.0 8.8 47.7 0.098
P4SMA33A BTJ 31.4 34.7 1.0 28.2 5.0 9.0 45.7 0.098
P4SMA36 BUJ 32.4 39.6 1.0 29.1 5.0 8.0 52.0 0.099
P4SMA36A BVJ 34.2 37.8 1.0 30.8 5.0 8.4 49.9 0.099
P4SMA39 BWJ 35.1 42.9 1.0 31.6 5.0 7.4 56.4 0.100
P4SMA39A BXJ 37.1 41.0 1.0 33.3 5.0 7.7 53.9 0.100
P4SMA43 BYJ 38.7 47.3 1.0 34.8 5.0 6.7 61.9 0.101
P4SMA43A BZJ 40.9 45.2 1.0 36.8 5.0 7.0 59.3 0.101
P4SMA47 CDJ 42.3 51.7 1.0 38.1 5.0 6.2 67.8 0.101
P4SMA47A CEJ 44.7 49.4 1.0 40.2 5.0 6.4 64.8 0.101
P4SMA51 CFJ 45.9 56.1 1.0 41.3 5.0 5.7 73.5 0.102
P4SMA51A CGJ 48.5 53.6 1.0 43.6 5.0 6.0 70.1 0.102
P4SMA56 CHJ 50.4 61.6 1.0 45.4 5.0 5.2 80.5 0.103
P4SMA56A CKJ 53.2 58.8 1.0 47.8 5.0 5.4 77.0 0.103
P4SMA62 CLJ 55.8 68.2 1.0 50.2 5.0 4.7 89.0 0.104
P4SMA62A CMJ 58.9 65.1 1.0 53.0 5.0 5.0 85.0 0.104
P4SMA68 CNJ 61.2 74.8 1.0 55.1 5.0 4.2 98.0 0.104
P4SMA68A CPJ 64.6 71.4 1.0 58.1 5.0 4.5 92.0 0.104
P4SMA75 CQJ 67.5 82.5 1.0 60.7 5.0 3.8 108 0.105
P4SMA75A CRJ 71.3 78.8 1.0 64.1 5.0 4.0 103 0.105
P4SMA82 CSJ 73.8 90.2 1.0 66.4 5.0 3.5 118 0.105
P4SMA82A CTJ 77.9 86.1 1.0 70.1 5.0 3.7 113 0.105
P4SMA91 CUJ 81.9 100 1.0 73.7 5.0 3.2 131 0.106
P4SMA91A CVJ 86.5 95.5 1.0 77.8 5.0 3.3 125 0.106
Version:G11
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Device
Marking
Code
Breakdown Voltage
VBR (V)
(Note 1)
Device
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltag
e
Temperature
IT VWM @ VWM Current IPPM @ IPPM Coefficient
Min Max (mA) (V) ID (uA) (A) (Note 2) Vc(V) of VBR(%/)
P4SMA100 CWJ 90 110 1.0 81.0 5.0 2.9 144 0.106
P4SMA100A CXJ 95 105 1.0 85.5 5.0 3.0 137 0.106
P4SMA110 CYJ 99 121 1.0 89.2 5.0 2.6 158 0.107
P4SMA110A CZJ 105 116 1.0 94.0 5.0 2.7 152 0.107
P4SMA120 RDJ 108 132 1.0 97.2 5.0 2.4 173 0.107
P4SMA120A REJ 114 126 1.0 102.0 5.0 2.5 165 0.107
P4SMA130 RFJ 117 143 1.0 105.0 5.0 2.2 187 0.107
P4SMA130A RGJ 124 137 1.0 111.0 5.0 2.3 179 0.107
P4SMA150 RHJ 135 165 1.0 121.0 5.0 1.9 215 0.108
P4SMA150A RKJ 143 158 1.0 128.0 5.0 2.0 207 0.108
P4SMA160 RLJ 144 176 1.0 130.0 5.0 1.8 230 0.108
P4SMA160A RMJ 152 168 1.0 136.0 5.0 1.9 219 0.108
P4SMA170 RNJ 153 187 1.0 138.0 5.0 1.7 244 0.108
P4SMA170A RPJ 162 179 1.0 145.0 5.0 1.8 234 0.108
P4SMA180 RQJ 162 198 1.0 146.0 5.0 1.6 258 0.108
P4SMA180A RRJ 171 189 1.0 154.0 5.0 1.7 246 0.108
P4SMA200 RSJ 180 220 1.0 162.0 5.0 1.4 287 0.108
P4SMA200A RTJ 190 210 1.0 171.0 5.0 1.51 274 0.108
Notes:
1. VBR measure after IT applied for 300us, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled.
4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version:G11
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Device Device
Marking
Code
Breakdown Voltage
VBR (V)
(Note 1)