2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Emitter-Base Voltage Continuous Collector Current VEBO IC Power Dissipation (TC=25C) Power Dissipation Operating and Storage Junction Temperature 75 UNITS V 50 V 7.0 V 500 mA PD PD 3.0 W 0.8 W TJ, Tstg -65 to +200 C MAX 10 UNITS nA 10 nA ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=60V VEB=5.0V BVCBO IC=100A 75 V BVCER IC=10mA, RBE=10 IE=100A 50 V BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob 7.0 IC=150mA, IB=15mA IC=150mA, IB=15mA VCE=10V, IC=100A VCE=10V, IC=10mA 20 VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=50mA, f=20MHz 40 V 1.5 V 1.3 V 35 120 20 60 MHz 25 pF Cib VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz 80 pF NF VCE=10V, IC=300A, f=1.0kHz 12 dB R1 (23-April 2013) 2N1613 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-April 2013) w w w. c e n t r a l s e m i . c o m