fiAMOSPEC NPN SILICON POWER TRANSISTORS 2S8C2073 transistor is designed for use in generai purpose Power arnplifier,vertical output application FEATURES: * Collector-Emitter Voltage Vego= 150V(Min) * DC Current Gain hFE= 40-140@1,= 500mA *Complementary PNP 2SA940 MAXIMUM RATINGS NPN 2S8C2073 1.5 AMPERE POWER TRANASISTORS 150 VOLTS 25 WATTS Se TO-220 Characteristic Symbol 2862073 Unit Collector-Emitter Voltage Veceo 150 Vv Collector-Base Voltage Vepo 150 V Emitter-Base Voitage Vepo 5.0 Collector Current - Continuous le 1.5 A - Peak lowe 3.0 Base Current lp 0.5 A Total Power Dissipation @T, = 25C Pp 25 Ww Derate above 25C 0.2 wirc Operating and Storage Junction Ty .Tst C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 5.0 C FIGURE -1 POWER DERATING a oa R 8 = o nan P>, POWER DISSIPATION(WATTS) ~ on 2 25 50 75 100 125 150 To , TEMPERATURE(C) oO ~| a re Ti a | A B L 4 > Tr Fr a PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.,COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 1468 | 15.31 B 9.78 | 10.42 c 5.01 6.52 D 13.06 | 14.62 E 3.57 407 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 O55 M 2.48 2.98 Oo 3.70 3.902SC2073 NPN a aa eee cece ec ee ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage Vier)cBo Vv (1,= 1.0 mA, I,= 0) 150 Collector-Emitter Breadown Voltage Viar\ceo Vv (l,= 5.0 mA, I,= 0 ) 150 Emitter-Base Voitage Vepo V ( Ip= 1.0 mA, I= 0) 5.0 Collector Cutoff Current lopo uA ( Veg 120 V, I= 0) 10 Emitter Cutoff Current lego uA 10 ( Vep= 5.0 V, I= 0) ON CHARACTERISTICS (1) DC Current Gain hFE (I,= 0.5 A, Vog= 10 V ) 40 140 Coilector-Emitter Saturation Voltage Vesa) (I,g= 0.5 A, R= 50 mA) 1.5 Base-Emitter On Voltage Vee(on) (Ig= 500 MA, Vog= 10 V) 0.65 0.85 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product . f; (1g = 0.5A, Vog = 10 V, f = 1.0 MHz ) 4.0 MHz (1) Pulse Test: Pulse Width =300ps,Duty Cycle = 2.0%:2SC2073 NPN Ee ACTIVE-REGION SAFE OPERATING AREA (SOA) Ic - Vee 2.0 5.0 2.0 = @ 1.0 = NR 05 02 o @ 04 lc , COLLECTOR CURRENT (A) 2 - Bonding Wire Limit Second Breakdown Limit Thermally Limited aT ,=25C (Singe Puse} o 2 an lc , COLLECTOR CURRENT (Amp) 40 8.0 12 16 20 Vce , COLLECTOR-EMITTER VOLTAGE (V) VCE(sat) - Ic 50 70 10 20 (30 5070 100 150 300 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Io-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tups150C,At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) 0.01 0.02 0.05 0.1 02 03 05 1.0 20 3.0 Ig, COOLECTOR CURRENT (A) DC CURRENT GAIN COMMON EMITTER 300 Voe=-10V hee , DC CURRENT GAIN on So 20 10 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 ic , COLLECTOR CURRENT (AMP)