Issue 11 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
830 series
Silicon 25V hyperabrupt varactor diodes
ZC829, ZDC833, ZMV829, ZMDC830 and ZV831
Description
A range of silicon varactor diodes for use in
frequency control and filtering. Featuring
closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase
noise performance. Available in single or dual
common cathode format in a wide rage of
miniature surface mount packages.
Features
• Close tolerance CV characteristics
• High tuning ratio
•Low I
R (typically 200pA)
• Excellent phase noise performance
•High Q
• Range of miniature surface mount packages
Applications
• VCXO and TCXO
• Wireless communications
• Pagers
• Mobile radio
Where steeper CV slopes are required there is the 12V hyperabrupt range:
ZC930, ZMV930, ZV930 and ZV931
SOT23 SOT323
SOD523 SOD323
830 series
Issue 11 - January 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Order codes and device marking
Note:
The order codes are shown as TA which is for 7 inch reels. For 13 inch reels substitute TC in place of TA in the order code.
Tape and reel information
SOT23 SOD323 SOD523 SOT23 SOT323
Order code Mark Order code Mark Order code Mark Order code Mark Order code Mark
ZC829ATA J9A ZMV829ATA AA
ZC829BTA J9B ZMV829BTA CA
ZC830ATA J1A ZMV830ATA AB
ZC830BTA J1B ZMV830BTA CB
ZC831ATA J3A ZMV831ATA AC
ZC831BTA J3B ZMV831BTA CC ZV831BV2TA 81 ZMDC831BTA CC
ZC832ATA J4A ZMV832ATA AD
ZC832BTA J4B ZMV832BTA CD ZV832BV2TA 82 ZMDC832BTA CD
ZC833ATA J2A ZMV833ATA AE ZDC833ATA C2A
ZC833BTA J2B ZMV833BTA CE
ZC834ATA J5A ZMV834ATA AF ZDC834ATA C5A
ZC834BTA J5B ZMV834BTA CF
ZC835ATA J6A ZMV835ATA AG
ZC835BTA J6B ZMV835BTA CG
ZC836ATA J7A
ZC836BTA J7B
Reel code Reel size
(inches)
Tape width
(millimeters)
Quantity per reel
TA 7 8 3,000
TC 13 8 10,000
830 series
Issue 11 - January 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Tuning characteristics at Tamb = 25°C
Absolute maximum ratings
Electrical characteristics at Tamb = 25°C
Part Capacitance (pF)
VR=2V, f=1MHz
Min Q
VR = 3V
f = 50MHz
Capacitance ratio
C2 / C20
@ f = 1MHz
Min. Nom. Max. Min. Max.
829A 7.38 8.2 9.02 250 4.3 5.8
829B 7.79 8.2 8.61 250 4.3 5.8
830A 9.0 10.0 11.0 300 4.5 6.0
830B 9.5 10.0 10.5 300 4.5 6.0
831A 13.5 15.0 16.5 300 4.5 6.0
831B 14.25 15.0 15.75 300 4.5 6.0
832A 19.8 22.0 24.2 200 5.0 6.5
832B 20.9 22.0 23.1 200 5.0 6.5
833A 29.7 33.0 36.3 200 5.0 6.5
833B 31.35 33.0 34.65 200 5.0 6.5
834A 42.3 47.0 51.7 200 5.0 6.5
834B 44.65 47.0 49.35 200 5.0 6.5
835A 61.2 68.0 74.8 100 5.0 6.5
835B 64.6 68.0 71.4 100 5.0 6.5
836A 90.0 100.0 110.0 100 5.0 6.5
836B 95.0 100.0 105.0 100 5.0 6.5
Parameter Symbol Max. Unit
Forward current IF200 mA
Power dissipation at Tamb = 25°C SOT23 Ptot 330 mW
Power dissipation at Tamb = 25°C SOD323 Ptot 330 mW
Power dissipation at Tamb = 25°C SOD523 Ptot 250 mW
Operating and storage temperature range -55 to +150 °C
Paramater Conditions Min. Typ. Max. Unit
Reverse breakdown voltage IR = 10␮A25 V
Reverse voltage leakage VR = 20V 0.2 20 nA
Temperature coefficient of
capacitance
VR = 3V, f = 1MHz 300 400 ppCm/°C
830 series
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© Zetex Semiconductors plc 2007
Typical characteristics
830 series
Issue 11 - January 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Package outline - SOT323
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 0.80 1.10 0.0315 0.0433 E1 1.15 1.35 0.0453 0.0532
A1 0 0.10 0 0.0039 e 0.65 BSC 0.0256 BSC
A2 0.80 1.00 0.0315 0.394 e1 1.30 BSC 0.0512 BSC
b 0.25 0.40 0.0098 0.0158 L 0.10 0.30 0.0039 0.0118
C 0.10 0.26 0.0039 0.0102 Q1 0.10 0.40 0.0039 0.0158
D 1.80 2.20 0.0709 0.0866 ⍜0° 30° 0° 30°
E 1.80 2.40 0.0709 0.0945 - - - - -
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
L
E1
E
e1
D
A1
A2
A
e
b
e
C
⍜
Q1
830 series
Issue 11 - January 2007 6 www.zetex.com
© Zetex Semiconductors plc 2007
Package outline - SOD523
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
DIM Millimeters Inches DIM Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A – 0.800 – 0.0314 E 1.500 1.700 0.0590 0.0669
A1 0.000 0.100 0.000 0.0039 E1 1.100 1.300 0.0433 0.0511
A2 0.600 0.800 0.0236 0.0314 L 0.200 0.400 0.0078 0.0157
b1 0.160 0.300 0.0062 0.0118 L1 0.170 0.230 0.0066 0.0090
c 0.080 0.220 0.0031 0.0086 U 4° 10° 4° 10°
D 0.700 0.900 0.0275 0.0354 - - - - -
E
Cathode
Mark
D
b1
L1
c
L
⍜
E1
A
A1
A2
830 series
Issue 11 - January 2007 7 www.zetex.com
© Zetex Semiconductors plc 2007
Package outline - SOD323 Top mark
DIM Millimeters DIM Millimeters
Min. Max. Min. Max.
A 0.91 1.16 E 0.127 0.200
B 0.00 0.10 F 1.52 1.77
C - - G 1.11 1.37
D 0.33 0.40 H 2.46 2.71
A
Top view
Partmark as example only
for orientation
C
YZ
H
F
D
G
A
BE
C
830 series
Issue 11 - January 2007 8 www.zetex.com
© Zetex Semiconductors plc 2007
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© 2007 Published by Zetex Semiconductors plc