R07DS0747EJ0300 Rev.3.00 Page 1 of 9
Feb 14, 2013
Preliminary Datasheet
RJH1CV6DPK
1200V - 30A - IGBT
Application: Inverter
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
Built-in fast recovery diode (trr = 180 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 120 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collecto
r
3. Emitter
4. Collecto
r
C
G
E
RENESAS Package code:
PRSS0004ZE-A
(Package name:
TO-3P)
123
4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage / diode rev erse vo ltage VCES / VR 1200 V
Gate to emitter voltage VGES 30 V
Tc = 25°C IC 60 A Collector current Tc = 100°C IC 30 A
Collector peak current ic(peak) Note1 90 A
Collector to emitter diode forward current IDF 30 A
Collector to emitter diode forward peak current iDF(peak) Note1 90 A
Collector dissipation PC Note2 290 W
Junction to case thermal resistance (IGBT) j-c Note2 0.43 °C/W
Junction to case thermal resistance (Diode) j-cd Note2 0.69 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
R07DS0747EJ0300
Rev.3.00
Feb 14, 2013
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 2 of 9
Feb 14, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current
/ Diode reverse current ICES/IR — — 5 A VCE = 1200 V, VGE = 0
Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 4.5 — 6.5 V VCE = 10 V, IC = 1 mA
VCE(sat) — 1.8 2.6 V IC = 30 A, VGE = 15 V Note3 Collector to emitter saturation voltage VCE(sat) — 2.6 — V IC = 60 A, VGE = 15 V Note3
Input capacitance Cies — 1600 — pF
Output capacitance Coes — 85 — pF
Reverse transfer capacitance Cres — 43 — pF
VCE = 25 V
VGE = 0
f = 1 MHz
Total gate charge Qg — 105 — nC
Gate to emitter charge Qge — 14 — nC
Gate to collector charge Qgc — 55 — nC
VGE = 15 V
VCE = 300 V
IC = 35 A
Turn-on delay time td(on) — 46 — ns
Rise time tr — 33 — ns
Turn-off delay time td(off) — 125 — ns
Fall time tf — 120 — ns
Turn-on energy Eon — 2.3 — mJ
Turn-off energy Eoff — 1.7 — mJ
Total switching energy Etotal — 4.0 — mJ
VCC = 600 V
VGE = 15 V
IC = 30 A
Rg = 5 
Inductive load
Short circuit withstand time tsc — 5 — s VCC 720 V, VGE = 15 V
Tc 125°C
FRD forward voltage VF — 2.0 — V IF = 30 A Note3
FRD reverse recovery time trr — 180 — ns
FRD reverse recovery charge Qrr — 0.63 — C
FRD peak reverse recovery current Irr — 9.2 — A
IF = 30 A
diF/dt = 100 A/s
Notes: 3. Pulse test.
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 3 of 9
Feb 14, 2013
Main Characteristics
0
Collector Current I
C
(A)
Case Temperature Tc (°C)
Maximum DC Collector Current vs.
Case Temperature
0255010075 125150 1750255010075 125150 175
Collector Dissipation Pc (W)
Case Temperature Tc (°C)
Collector Dissipation vs.
Case Temperature
400
300
200
100
0
80
60
40
20
0
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Maximum Safe Operation Area
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Turn-off SOA
0400 800 1200 1600
100
80
60
40
20
0
1000
100
1
10
0.01
0.1
110010 10000
1000
Tc = 25°C
Single pulse
100 μs
Typical Output Characteristics
60
80
40
20
12345
Collector Current I
C
(A)
0
0
Collector to Emitter Voltage V
CE
(V)
60
80
40
20
Tc = 25
°
C
Pulse Test
V
GE
= 8 V
15 V
10 V
12 V
Typical Output Characteristics
12345
Collector Current I
C
(A)
0
Collector to Emitter Voltage V
CE
(V)
Tc = 150
°
C
Pulse Test
V
GE
= 8 V
12 V
10 V
15 V
PW = 10 μs
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 4 of 9
Feb 14, 2013
60
80
40
20
01.0
4.0
3.5
2.5
3.0
2.0
1.5
10
8
6
4
2
0
Typical Transfer Characteristics
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−250257512550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc (
°
C)
1 mA
I
C
= 10 mA
Gate to Emitter Voltage V
GE
(V)
1
3
2
4
5
1
3
2
4
5
812 201610 1814812 201610 18
14
Collector to Emitter Satularion Voltage
vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Tc = 25
°
C
Pulse Test
Tc = 150
°
C
Pulse Test
I
C
= 60 A
30 A
I
C
= 60 A
30 A
04812 2016
Tc= 25
°
C150
°
C
V
CE
= 10 V
Pulse Test
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
−250257512550 100 150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Case Temparature Tc (
°
C)
30 A
I
C
= 60 A
V
GE
= 15 V
Pulse Test
25
20
15
10
5
0
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
Frequency f (kHz)
110010 1000
Tj = 125°C
Tc = 90°C
V
CE
= 400 V
V
GE
= 15 V
Rg = 5 Ω
duty = 50%
0
Collector current wave
(Square wave)
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 5 of 9
Feb 14, 2013
10
1000
100
10000
1
10
0.1
100
1000
10
502515075 125100
Switching Characteristics (Typical) (5)
td(on)
Case Temperature Tc (°C)
(Inductive load)
Switching Times t (ns)
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
tf
td(off)
tr
1
10
0.1
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Eoff
Eon
Swithing Energy Losses E (mJ)
Switching Times t (ns)
Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4)
110100
0.1
10
1
100
Swithing Energy Losses E (mJ)
1 10 100
1 10 100 1 10 100
Collector Current I
C
(A)
(Inductive load)
Eoff
Eon
1
100
10
1000
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
Collector Current IC (A)
(Inductive load)
Switching Times t (ns)
V
CC
= 600 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
td(off)
td(on)
tf
tr
td(off)
td(on)
tf
tr
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
V
CC
= 600 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
502515075 125100
Case Temperature Tc (°C)
(Inductive load)
Switching Characteristics (Typical) (6)
Eoff
Eon
Swithing Energy Losses E (mJ)
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 6 of 9
Feb 14, 2013
60
80
40
20
0
10
5
30
25
20
15
0
1.0
0.5
3.0
2.5
2.0
1.5
0
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Time trr (ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current Irr (A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
Forward Current IF (A)
01234
Tc = 25
°
C
150
°
C
V
CE
= 0 V
Pulse Test
Capacitance C (pF)
1
10
100
1000
10000
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
00
16
12
8
4
0
20 406010080120
V
GE
V
CE
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
I
C
= 35 A
V
CC
= 300 V
Tc = 25
°
C
V
GE
= 0 V
f = 1 MHz
Tc = 25
°
C
Cies
Coes
Cres
200
100
600
500
400
300
0
04080200120 160
04080200120 160
04080200120 160
V
CC
= 400 V
I
F
= 35 A
V
CC
= 400 V
I
F
= 35 A
V
CC
= 400 V
I
F
= 35 A
Tc = 150
°
C
25
°
C
Tc = 150
°
C
25
°
C
04080120160200
Tc = 150
°
C
25
°
C
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 7 of 9
Feb 14, 2013
0.01
1
0.1
10
100 μ1 m10 m 100 m1 10
P
DM
PW
T
D = PW
T
θj – c(t) = γs (t) • θj – c
θj – c = 0.69°C/W, Tc = 25°C
0.2
0.1
0.5
D = 1
Tc = 25°C
Pulse Width PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Pulse Width PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
0.01
0.1
10
1
100 μ1 m10 m 100 m1 10
100
100
P
DM
PW
T
D = PW
T
θj – c(t) = γs (t) • θj – c
θj – c = 0.43°C/W, Tc = 25°C
Tc = 25°C
0.2
0.1
0.5
D = 1
0.01
0.02
0.05
1 shot pulse
0.01
0.02
0.05
1 shot pulse
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 8 of 9
Feb 14, 2013
Switching Time Test Circuit
Diode Reverse Recovery Time Test Circuit
Waveform
Waveform
Diode clamp
D.U.T
D.U.T
Rg
L
V
CC
V
CC
t
rr
I
rr
di
F
/dt
0.9 I
rr
I
F
I
F
Rg
t
d(off)
t
d(on)
t
f
t
r
90%
90%90%
10%
10%
10%
V
GE
I
C
0.5 I
rr
L
0
RJH1CV6DPK Preliminary
R07DS0747EJ0300 Rev.3.00 Page 9 of 9
Feb 14, 2013
Package Dimension
φ3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Previous Code
PRSS0004ZE-ATO-3P / TO-3PV
MASS[Typ.]
5.0g
Package Name
TO-3P SC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Orderable Part Number Quantity Shipping Container
RJH1CV6DPK-00#T0 30 pcs Tube
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