CY7C164A CY7C166A yoke CYPRESS SEMICONDUCTOR Features Functional Description Automatic power-down when The CY7C164A and CY7C 166A are high- deselected performance CMOS static RAMs orga- Output Enable (OE) feature nized as 16,384 by 4 bits. Easy memory ex- (7C 166A) pansion is provided by an active LOW chip MOS fi : enable (CE) and three-state drivers. The cn OS for optimum speed/power CY7C166A has an active low output enable High speed (OE) feature. Both devices have an auto- ta = 15 ns matic power-down feature, reducing the power consumption by 60% when dese- Low active power 550 mw lected. . Writing to the device is accomplished when one power the chip enable (CE) and write enable _ m (WE) inputs are both LOW (and the output TTL-compatible imputs and outputs enable (OE)is LOW for the 7C 166A). Data Capable of withstanding greater than 07 the four input/output pins ([/O, through 2001V electrostatic discharge 16,384 x 4 Static R/'W RAM I/O) is written into the memory location specified on the address pins (Ag through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for 7C166A). while write enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the ad- dress pins will appear on the four data I/O pins. The I/O pins stay_in high-impedance state when chip enable (CE) is HIGH, or write en- able (OE) is HIGH for 7C 166A). A die coat is used to insure alpha immunity. Logic Block Diagram Pin Configurations Ae WOs vo; YO, INPUT BUFFER we a no Wor C164A-2 2 a As = WO2 Lec na wi Top View 5 no e a "e- ede Ag o VOy COLUMN CE - NO rere (OE) aa < (70 166A ONLY} DIP/SOJ Top View SOoJ Top View Top View 2908 tz BL9 C164A-1 Selection Guide TC164A-15 7C164A-20 7C164A-25 IC164A-35 7C164A-45 7C166A-15 7C166A-20 TIC166A-25 | 7CL66A-35 7C166A-45 Maximum Access Time (ns) 15 20 25 35 45 Maximum Operating Commercial 115 100 100 100 100 Current (mA) Military 100 100 100 100 Maximum Standby Commercial 40/20 40/20 30 30 30 Current (mA) Military 40/20 /20 30 30 2-224CY7C164A 1. Ta ts the instant on case temperature. 2. See the last page of this specification for Group A subgroup testing information. 3. Viz min. = -3.0V for pulse durations less than 30 ns. 4. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. =" = Sa. CY7C166A SS = SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ...........-.... ~ 65C to + 150C Static Discharge Voltage .............. 0.000000 >2001V Ambient Temperature with (per MIL-STD-883, Method 3015) Power Applied ..............00000005- -55C to + 125C Latch-up Current .........-- 60... eee eee eee > 200 mA Supply Voltage to Ground Potential ....... - 0.5V to + 7.0V Operating Range DC Voltage Applied to Outputs Ambient in High Z State .......-..0....-2...0000, -0.5V to + 7.0V Range Temperature Vec DC Input Voltage ween eee e eee eee - 3.0V ta + 7.0V Commercial 0C to + 70C SV + 10% Output Current into Outputs (Low) ...............-. 20 mA Military! - 55C to + 125C 5V + 10% Electrical Characteristics Over the Operating Range!?! 7C1644-15 7C164A-20 7C166A-15 7C 1664-20 Parameters Description Test Conditions Min. Max. Min. Max. | Units Vou Output HIGH Voltage Vee = Min., Ioy = - 4.0 mA 2.4 2.4 Vv Voi Output LOW Voltage Vec = Min., Io. = 8.0 mA 0.4 0.4 Vv Vin Input HIGH Voltage 2.2 Vee 2.2 Vee Vv Vir Input LOW Voltage!) -3.0 0.8 -3.0 0.8 v Ix Input Load Current GND < Vi < Vec -10 +10 -10 +10 pA loz Output Leakage GND < Vo < Vee, -10 +10 -10 +10 | pA Current Output Disabled Ips Output Short Vec = Max., Vour = GND -350 -350 mA Circuit Current!) Tec Vcc Operating Supply | Vcc = Max. Com'l U5 100 mA Current Tour = 0 mA Mil 100 Ispi Automatic CEU! Max. Vcc, CE > Vin Com! 40 40 mA Power Down Current Min. Duty Cycle = 100% : Mil 40 Ispe Automatic CEP! Max. Vcc. Com'l Power Down Current CE > Vin - 0.3V 20 20 mA Vin = Vec - 0.3V or Mil Vin <.0.3V 20 Notes: 5. A pull-up resistor to Vcc on the CE input is required to keep the de- vice deselected during Vcc power-up, otherwise Isp will exceed values given. 6. Tested initially and after any design or process changes that may affect these parameters. 2-225ae CY7C164A SSS Forres CY7C166A Electrical Characteristics Over the Operating Range "! (continued) TC164A-25 7C164A-35,45 7C166A-25 7C166A-35,45 Parame- Description Test Conditions Min. | Max. | Min. Max, | Units Vou Output HIGH Voltage | Vcc = Min., Ion = - 4.0mA 2.4 2.4 Vv Voi Output LOW Voltage Vcc = Min. Io, = 8.0mA 0.4 0.4 Vv Vin Input HIGH Voltage 22 Vec 22 Vec Vv Vit Input LOW Voltage"?! ~3.0 0.8 ~3.0 0.8 Vv Ix Input Load Current GND < Vis Vec -10 +10 -10 +10 pA loz Output Leakage GND < Vo < Vec. -10 +10 -10 +10 HA Current Output Disabled los Output Short Vcc = Max., Vour = GND -350 -350 mA Circuit Current!] lec Vcc Operating Supply | Vcc = Max. Com'l 100 100 mA Current lout = OMA Mil 100 100 Isei Automatic CE! Max. Vcc, CE > Vin Com'l 30 30 mA Power Down Current | Min. Duty Cycle = 100% Mil 40 30 Tsp2 Automatic CE"! Max. Vec. Com! 5 Power Down Current CE > Vin - 0.3V 20 20 mA Vin > Vec - 0.3V or Mil Vin < 0.3V 20 20 Capacitance!) Parameters Description Test Conditions Max. Units Cw Input Capacitance Ta = 25C. = 1 MHz, 10 pF Cour Output Capacitance Veo = 5.0V 10 pF AC Test Loads and Waveforms Aras. R141 BV 5V ALL INPUT PULSES OUTPUT OUTPUT 3ov R2 . R2 GND 30 pF 255.2. Se F 2550. INCLUDING a INCLUDING JGANO=S JIGAND SS SCOPE 7 SCOPE - (a) (b) c1648-7 C164A-8 THEVENIN EQUIVALENT 1672. OUTPUT @__-4#A_ 1 73V Equivalent to: 2-226=~ CY7C164A = Sf Cross CY7C166A ssa &) = SEMICONDUCTOR Switching Characteristics Over the Operating Range!?! 7C164A-15 | 7C164A-20 | 7C164A-25 | 7C164A-35 7C164A-45 7C166A-15 | 7C166A-20 | 7C166A-25 | 7TCI66A-35 7C166A-45 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Units READ CYCLE trc Read Cycle Time 15 20 25 35 45 ns tas Address to Data Valid 15 20 25 35 45 ns toa Chopee Hold from Address 3 3 3 3 3 ns tace CE LOW to Data Valid 15 20 25 35 45 | us took Vaid 1 DA? | 7c1664 10 10 2 15 20 | ns tLuzoE OELOWtoLOWZ] 7C166A | 3 3 3 3 3 ns tLz08 fone TC166A 8 8 10 12 is | ns tizce CE LOW to Low Z!} 3 5 5 5 5 ns tuzce CE HIGH to High Z@:! 8 8 10 15 15 ns teu CE LOW to Power-Up Q 0 0 0 Q ns tpp CE HIGH to Power-Down 15 20 20 20 25 ns WRITE CYCLE!) twe Write Cycle Time 1S 20 20 25 40 ns tscE CE LOW to Write End 12 15 20 25 30 ns taw Address Set-Up to Write End 12 15 20 25 30 ns tHa Address Hold from Write End 0 0 0 0 0 ns tsa Address Set-Up to Write Start 0 0 0 0 0 ns tpwe WE Pulse Width 12 15 15 20 20 ns tsp Data Set-Up to Write End 10 10 10 15 1S ns tuo Data Hold from Write End 0 0 0 0 0 ns tuzwe WE HIGH to Low Zl 5 5 5 5 5 ns tHzweE WE LOW to High Z! 7 7 7 10 15 ns Notes: 7. Test conditions assume signal transition time of 5 ns or less, timing ref- either signal can terminate a write by going HIGH. The data input set- erence levels of 1.5V, input pulse levels of 0 to 3.0V, and output load- up and hold timing should be referenced to the rising edge of the signal ing of the specified fo1/Ioy and 30-pF load capacitance. that terminates the write. 8. At any given temperature and voltage condition, tyzcg is less than 11. WE is HIGH for read cycle. itzce for any given device. These parameters are guaranteed and not 12. Device is continuously selected, CE = Viz. (7C166: OE = Vij also). 9. hoe aoe lowe are specified with CL = 5 pF as in part (b) in AC Wr aanress vat Prin or eoirident with CE transition ae ee. Loads. Transition is measured +500 mV from steady state volt- 15. IfCE goes THIGH simultaneously sith WE HIGH, the output remains 10. The internal write time of the memory is defined by the overlap of CE in a high-impedance state. LOW and WE LOW. Both signals must be LOW to initiate a write and 2-227ae CY7C164A = 7 CYPRESS CY7C166A SS & SEMICONDUCTOR Switching Waveforms Read Cycle No, 1! 2 tac | ADDRESS x tan | fona DATA OUT PREVIOUS DATA VALID Kx x DATA VALID Ci64A-9 Read Cycle No. 2{!- 13) CE OE 70166 tooe tLz0E HIGH IMPEDANCE tice DATA OUT HIGH DATA VALID IMPEDANCE tep | Voc Pu icc SUPPLY 50% 50% CURRENT ISB C164A-10 Write Cycle No. 1 (WE Controlled) [! "I ADDRESS CE DATA IN DATA-IN VALID YHZWwe >| Uwe ms HIGH IMPEDANCE DATA VO DATA UNDEFINED XL CI64A-11| | i CYPRESS CY7C164A CY7C166A : SEMICONDUCTOR Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) @ !4 151 ADDRESS CE DATA IN tsp DATA-IN VALID DATA I/O DATA UNDEFINED Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE = Ny ou oa NORMALIZED loc, Isa oO Qo oo 9 on Isp 4.0 45 5.0 5.5 6.0 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME ys. SUPPLY VOLTAGE = u Ta = 25C) NORMALIZED tay 45 5.0 55 6.0 SUPPLY VOLTAGE (V) NORMALIZED lc, Isp NORMALIZED tag NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE loc Isp 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME ys. AMBIENT TEMPERATURE 16 1.4 12 ra 1.0 Voo = 8.0V 0.8 L*" 0.6 -55 25 125 AMBIENT TEMPERATURE (C) 2-229 HIGH IMPEDANCE C1B4A-12 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE = NQ o = OUTPUT SOURCE CURRENT (mA) oo Oo 1.0 2.0 3.0 40 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT vs, OUTPUT VOLTAGE = 6 eS 8 8 8 OUTPUT SINK CURRENT (mA) 0 0.0 3.0 OUTPUT VOLTAGE (V) 10 2.0 4.0Sr Sue # CYPRESS _ SEMICONDUCTOR Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 3.0 nm oN Oo oa NORMALIZED lpo in 8 N oO 20.0 DELTA tag (ns) a Q 10.0 TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.0 05 5.0 00 #10 20 40 50 0.0 0 SUPPLY VOLTAGE (V) 7C164A Truth Table CE | WE | Inputs/Outputs Mode H | X | HighZ Deselect/Power-Down L | H | Data Out Read L L Data In Write 200 CAPACITANCE (pF} 400 600 800 1000 CY7C164A CY7C166A NORMALIZED Icc vs. CYCLE TIME 1.25 T Voc = 5.0V T, = 25C 8 Vin = 0.5V 1.00 N a = 1 x Q 075 Le 50 10 20 30 40 CYCLE FREQUENCY (MHz) 7C166A Truth Table a H CE | WE | OE | Inputs/Outputs Mode x X | High Z Deselect/Power-Down L H L | Data Out Read L L X | Data In Write L H H | High Z Deselect=a. =" oe = 7 CYPRESS =a CY7C164A CY7C166A Ordering Information Speed Package | Operating Speed Package | Operating (ns) Ordering Code Type Range (ns) Ordering Code Type Range 15 CY7C164A-15PC P9 Commercial 15 CY7C166A-15PC P13 Commercial CY7C164A-15VC V13 CY7C166A-15SVC V13 CY7C164A-15DC D10 CY7C166A-15DC D10 CY7C164A-15LC L52 CY7C166A-15LC LS2 20 CY7C164A-20PC Pg Commercial 20 CY7C166A-20PC P13 Commercial CY7TCI64A-20VC V13 CY7TC166A-20VC V13 CY7C164A-20DC D10 CY7C166A-20DC D4 CY7C164A-20LC L52 CY7C166A-20LC LS4 CY7C164A-20DMB D10 Military CY7C166A-20DMB D4 Military CY7C164A-20LMB L52 CY7C166A-20LMB L54 CY7C164A-20KMB K73 CY7C166A-20KMB K73 25 CY7C164A-25PC P9 Commercial 25 CY7C166A-25PC P13 Commercial CY7C164A-25VC V13 CY7C166A-25VC V3 CY7C164A-25DC Dio CY7C166A-25DC D14 CY7C164A-25LC L52 CY7C166A-25LC 154 CY7C164A-25DMB D10 Military CY7C166A-25DMB D4 Military CY7C164A-25LMB L52 CY7C166A-25LMB LS4 CY7C164A-25KMB K73 CY7C166A-25KMB K73 35 CY7C164A-35PC P9 Commercial 35 CY7C166A-35PC Pi3 Commercial CY7TC164A-35VC VB CY7C166A-35VC V1i3 CY7C164A-35DC D10 CY7C166A-35DC D14 CY7C164A-35LC L52 CY7C166A-35LC LS4 CY7C164A-35DMB D10 Military CY7C166A-35DMB D4 Military CY7C164A-35LMB L52 CY7C166A-35SLMB L54 CY7C164A-35KMB K73 CY7C166A-35KMB K73 45 CY7C164A-45PC P9 Commercial 45 CY7C166A-45PC P13 Commercial CY7C164A-45VC V13 CY7C166A-45VC V13 CY7C164A-45DC D10 CY7C166A-45DC D4 CY7C164A-45LC LS2 CY7C166A-45LC LS4 CY7C164A-45DMB D10 Military CY7C166A-45DMB D14 Military CY7C164A-45LMB LS2 CY7C166A-45LMB LS4 CY7C164A-45KMB K73 CY7C166A-45KMB K73==. = SSS z = a CYPRESS r Bit Map OUTPUTS 1 oOr23 G1E3) i; ory 2 RRR MEE 6 9 10 SEMICONDUCTOR +s ts CY7C164A ao ag HF 41 1s PRR MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics 12 Parameters Subgroups Vou 1, 2,3 Vor 1, 2.3 Vin 1,2.3 Vir Max. 1, 2,3 lix 1, 2,3 loz 1,2,3 Tos 1,2.3 lec 1,2,3 Isai 1, 2, 3 Isai 1, 2,3 Document #: 38-00113 TERRE ae a 13 1415 CY7C166A Address Designators Address Address Pin Name Function Number AS X3 1 A6 X4 2 AT XS 3 A8 X6 4 A9 X7 5 Al0 y5 6 All Y4 7 Al2 Yo 8 Al3 Yl 9 A0 Y2 17 Al 3 18 A2 x0 19 A3 x1 20 A4 X2 21 Switching Characteristics Parameters Subgroups READ CYCLE tac 7, 8.9, 10, 11 taa 7, 8, 9, 10, 11 tona 7, 8,9, 10, il tace 7, 8, 9, 10. 11 tpoe!! 7, 8,9, 10. 11 WRITE CYCLE twe 7,8, 9, 10. 11 tsce 7, 8,9, 10. 11 taw 7, 8,9, 10. 11 tha 7,89, 10, 11 tsa 7,8, 9, 10. 11 tpwe 7, 8,9, 10. 11 tsp 7, 8,9, 10, 11 tub 7,8, 9, 10, 11 Note: 16. 7C166A only.