SURMOUNTTM PIN Diodes
MA4SPS421, MA4SPS422
Rev. V8
MA4SPS42X Series
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Features
Surface Mount
No Wire Bonding Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
Higher Average and Peak Power Handling
RoHS Compliant* and 260º Reflow Compatible
Description
This device is a Silicon-Glass PIN diode chip
fabricated with M/A-COM Technology Solutions
patented HMICTM process. This device features two
silicon pedestals embedded in a low loss, low dis-
persion glass. The diode is formed on the top of one
pedestal and connections to the backside of the
device are facilitated by making the pedestal side-
walls electrically conductive. Selective backside
metallization is applied producing a surface mount
device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
These surmount devices are suitable for usage in
moderate incident power (10W C.W.) or higher
incident peak power (500W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.1 to 0.2nH, and excellent RC constant (0.45pS),
make the devices ideal for higher frequency switch
ele m ents com par ed to the ir pl a s t ic devic e
counterparts.
INCHES MM
DIM MIN. MAX. MIN. MAX.
A 0.040 0.042 1.025 1.075
B 0.021 0.023 0.525 0.575
C 0.004 0.008 0.102 0.203
D 0.013 0.015 0.325 0.375
E 0.011 0.013 0.275 0.325
F 0.013 0.015 0.325 0.375
G 0.019 0.021 0.475 0.525
Parameter Absolute Maximum
Forward Current 250mA
Reverse Voltage -200V
Operating Temperature -55°C to +125°C
Storage Temperature -55°C to +150°C
Junction Temperature +175°C
Dissipated Power
( RF & DC ) 1.8W
Mounting Temperature +280°C for 30 seconds
Absolute Maximum Ratings @ TA = 25°C
(unless otherwise specified)
MA4SPS421 MA4SPS422
1. Backside metal: 0.1 µM thick.
2. Yellow hatched areas indicate backside ohmic gold
contacts.
3. All devices have the same outline dimensions (A to G).
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.