Ordering number:EN 733D __ | 2SC2839 NPN Epitaxial Planar Silicon Transistor HF Amp Applications Features - Very small package enabiling compactness and slimness of sets, . High fp and small cre. (fp=320MHz typ, Cre 0.95pF typ) Absolute Maximum Ratings at Ta=25c unit Collector to Base Voltage VcBO 39 Vv Collector to Emitter Voltage VCEO 20 Vv Emitter to Base Voltage VEBO 3 Vv Collector Current Ie 30 mA Collector Dissipation Po 150s Junction Temperature TI 125 C Storage Temperature Tstg ~55 to +125 C Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Icno Vep=LlOV,Ip=0 0.1 ywA Emitter Cutoff Current Ippo VEB=4V,Ic=0 0.1 pA DC Current Gain hre Vcpe=6V,Ic=1mA 60* 320* Gain-Bandwidth Product f- VcE=6V,Ic=1mA 206 320 MHz Reverse Transfer Capacitance cre VcR=6V,f=1MHz 0.70.95 1.3 pF Base to Collector Time Constant rpb'Ce Vcp=6V,Io=1mA, f=31.9MH2 12 20 ps Noise Figure NF Veg=6V,Ic=1mA, f=100MHz 3.0 aB Power Gain PG Vop=6V,Ic=1ma, f=100MHz 25 dB * : The 28C2839 is classified as follows by hpp at 1mA. 60 DBD 120 100 E 200 160 F 320 NF, PG Test Circuit INPUT 500 ~Mp. Package Dimensions 2033 - ( unit: mm ) Ll ; Imm plated wire,lOmmg 5T tap,2T from VBE side. L2 : lmm@ plated wire,10mmg 7T tap,1T from Voce side. L3 : lmm@ plated wire, 10mm 3T. - Unit(Capacitance : F) B: Base C: Collector E: Emitter SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN _ 3107KI/308SKI/7283K1 ,TS No.733-1/4 2502839 5 14 0 H @'3 E a o 2 4 vu 4 1 9 o 0 = 0 2 4 6 8 10 Collector toEmitter Voltage,Vcp - V h - I 00 FE C pe Current Gain,hpe 8 Veg OY 9] 0.1 1 10 Collector Current,Ic - mA % Cre - VCB i ou Mi v rs i 8 4 f ! a at < a | v5 Pe u o WH g A H |e | a f= 1NHz 2 2 1 d 2 0 J 5 2 Collector to Base Voltage,Vcp - V Vce(sat) ~ IC Ig_ ip |? C-E Saturation Voltage,VcE(sat) - V _ op .o., Collector Current,I - mA Ip - 0 B BE Leo s Ee mh y' s a H Bw a o 220 J Vom =V 0 | 0 0.2 Q4 0.6 0.8 1.0 Base toEmitter Voltage, VgE - V fT - I 8 Gain-Bandwidth Product, fp MHz 1 10 Collector Current,Ic - mA rbb Ce - Ic f=31. 8 Collector te Base Time Constant ,Ybb'Ce ~ ps 5 0.1 1 Ls Collector Current,I - mA Pe - T 160 C a 5 8 8 8 8 Collector Dissipation,Pc - mW 3 o ow wo i Ww 0 n _# ' Ambient Temperature,Ta - C ate [- _No.733-2/4 252839 a Input Admittance yie - Ic 0 Output Admittance yoe ~ IC ~T gie Vog=6- OV 1 f=}-OMH2 Vop=6+0V | f=1-OMHz By oe I T 01 one. 100 & 2 | oem 7 ; 2 7 1 u 2 uo 2 ae ol o a J _ 0.01 10 1.0 10 10 14.0 . 10 Collector Current,Icc - mA Collector Current,I mA Input Admittance yie - Ic Output Admittance yoe - Ic Vom=6.0V e f= |OUHz 100 oe & ee | oO pa o 2 Vop=6-0 f= 10MHz 1.0 10 1-0 10 Collector Current,I - mA Collector Current,Ic - mA Input Admittance yip - Reverse Transfer Admittance yre - VCE Ig=i- Oma Irn=l- Cg f= |OCMH2 fe | gous i he 10 1 wo 2 a 10 o ' | a : a ol o> 1 1 a |) 1.0 10 Collector toEmitter Voltage,Vcp - V Collector to Emitter Voltage, Vce - V Forward Transfer. Admittance yfe - VCE Output Admittance Yoe - V Ig= 1.Ond ate = | OOMH fu far t Slo e @ ! 3 nh T= 1-OmA f= 00MHz / 0.1 1.0 10 10 10 Collector to Emitter Voltage, Vce ~ V Collector to Emitter Voltage ,Vce - "No. 733-3/4 2802839 Input Admittance Yie - I _Reverse Transfer Admittance yre - I _ . T T VCE=6-0V Vom=6- OV r= f= | 00MHz oh? 2 wa 4 ' 100 1.0 5 & | era | Qa 7 gre & 1.0 2 1.0 2 Collector Current ,Ic - mA Collector Current,I> ~ mA oo _Forward Transfer Admittance yfe - Ir Output Admittance yoo - I Cl =4.0 f= | COMHs, # I o1.0 g a = 10 # tH I mm 9 Tr 04 1.0 1.0 Collector Current,I - mA Collector Current,Ic - mA PG,NF - I m 2 od + 26 24 22 Vor=6.0V 20 ; f= 1Q0MHz i) at Test Cir- 16 cuit. Power Gain,PG Noise Figure,NF | 2) 1.0 . 10 Collector Current,Ic - mA HM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 733-4/4