PD- 91850C IRF7220 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS(on) = 0.012 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -14 11 8.8 88 2.5 1.6 0.02 110 12 -55 to + 150 V W/C mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA Maximum Junction-to-Ambient www.irf.com 1 7/16/99 http://store.iiic.cc/ IRF7220 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -14 --- --- --- -0.60 8.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5mA -0.006 --- V/C Reference to 25C, ID = -1mA .0082 0.012 VGS = -4.5V, ID = -11A .0125 0.020 VGS = -2.5V, ID = -8.8A --- --- V V DS = VGS, ID = -250A --- --- S VDS = -10V, ID = -11A --- -5.0 VDS = -11.2V, VGS = 0V A --- -100 VDS = -11.2V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 84 125 ID = -11A 13 20 nC VDS = -10V 37 55 VGS = -5.0V 19 --- VDD = -10V 420 --- ID = -11A ns 140 --- RG = 6.2 1040 --- R D = 0.91 8075 --- VGS = 0V 4400 --- pF VDS = -10V 4150 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -2.5 --- --- -88 --- --- --- --- 160 147 -1.2 240 220 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.8mH RG = 25, I AS = 11A. (See Figure 10) 2 www.irf.com http://store.iiic.cc/ IRF7220 80 60 VG S - 4.5V - 4.0V - 3.0V - 2.0V - 1.8V - 1.6V - 1.4V BO TTO M - 1.2V VG S - 4 .5 V - 4 .0 V - 3 .0 V - 2 .0 V - 1 .8 V - 1 .6 V - 1 .4 V B O TT O M - 1 .2 V 60 TO P -ID , D ra in-to -S o urce C urre nt (A ) -I D , Drain-to-S ource C urrent (A ) TOP 300s PULSE W IDTH TJ = 25C 40 20 50 30 0 s P U LSE W ID T H T J = 1 50C 40 30 20 10 -1.2V -1.2V A 0 0 2 4 6 8 0 10 -V D S , D ra in-to-Source V oltage (V) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , D ra in -to -S o urc e C urre n t (A ) 100 TJ = 1 5 0 C T J = 2 5 C 10 V D S = -1 0 V 2 0 s P U L S E W ID TH 2.0 3.0 4.0 5.0 6.0 7.0 4 6 8 10 Fig 2. Typical Output Characteristics 1000 1.0 2 -VD S , D rain-to-Sou rce V oltage (V ) Fig 1. Typical Output Characteristics 1 A 0 8.0 A ID = -11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VG S , G a te -to -S o u rc e V o lta ge (V ) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 http://store.iiic.cc/ IRF7220 10 10000 C , C apac it ance (pF ) 9000 -VGS , Gate-to-Source Voltage (V) V G S = 0V, f = 1kHz C is s = C g s + C g d , Cd s SH ORTE D C rs s = C g d C oss = C ds + C gd C iss 8000 7000 6000 C oss 5000 ID = -11A VDS =-10V 8 6 4 2 C rss 4000 0 A 1 0 10 20 -VD S , D rain-to-So urc e Voltage (V) 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -II D , Drain Current (A) -IS D , Reverse Drain Current (A) 40 Q G , Total Gate Charge (nC) 100 10 TJ = 150C TJ = 25C 1 100us 1ms 10 10ms V G S = 0V 0.1 0.0 0.5 1.0 1.5 2.0 TA = 25 C TJ = 150 C Single Pulse 1 0.1 A 2.5 Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 -VDS , Drain-to-Source Voltage (V) -VS D , S ou rce-to-D ra in Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF7220 300 EAS , Single Pulse Avalanche Energy (mJ) 12 -ID , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 TC , Case Temperature 125 ID -4.9A -8.8A BOTTOM -11A TOP 250 200 150 100 50 150 0 25 ( C) 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ IRF7220 SO-8 Package Details D IM D -B - 5 E -A - 5 A 8 7 6 5 1 2 3 4 e 6X H 0 .2 5 (.0 1 0 ) M A M e1 -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e K x 4 5 IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 0 8 0 8 R E C O M M E N D E D F O O T P R IN T NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X Part Marking 6 www.irf.com http://store.iiic.cc/ IRF7220 Tape and Reel SO-8 T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/99 www.irf.com 7 http://store.iiic.cc/