TOPAZ SEMICONDUCTOR OSE D JPq0ase2b ooo1038 3 i TIPAZ sata SEMICONDUCTOR N-CHANNEL ENHANCEMENT-NODE HIGH-VOLTAGE D-MOS POWER FeTS ORDERING INFORMATION Sorted Chips in Waffle Pack SD1122CHP TO-226AA (TO-92} Pkg-Lead Formed SDi122BD Description 200V, 10 ohms FEATURES APPLICATIONS @ Inherent Current Sharing Capability @ High-Speed Pulse Amplifiers when Paralleled @ Logic Buffers @ Simple Straight-Forward DC Biasing @ Line Drivers @ Extended Safe Operating Area @ Line interrupters Hf Inherently Temperature Stable @ Outpulser Switches Output Current Decreases as @ Display Drivers Temperature Increases ABSOLUTE MAXIMUM RATINGS (Ta = +25C unless otherwise noted) Drain-Source Voltage .... 6. eee cece eens 200V Thermal Resistance, Junction Drain-Gate Voltage (Vq@g = 0) ..... eee ee eee ee 200V TO CASE evccr cece cee eerenee 125C/W Gate-Source Voltage .......2-.0 eee eee +30V Operating Junction Continuous Device Dissipation (Note 2) ...... 0.3W Temperature Range ........+e.00- -55 to +150C Linear Derating Factor (Note 2)......... 2.4mW/ C Storage Temperature Range....... -55to +150C Continuous Drain Current (Note 2) ........-. 0.12A Lead Temperature (1/16 from mounting Peak Drain Current (Note 1, Note 2)........... 0.5A surface for30 Sec) 66... cc eee eee + 260C Continuous Device Dissipation Note i:Tcoase = + 26C (Note 1, Note 2)... .. cee eee ees 1.0W Note 2:Not applicable to chips. Final value dapends upon Linear Derating Factor mounting substrate. (Note 1,Note2) .......-.0.. 8.0mW/ C SCHEMATIC DIAGRAM PACKAGE DIMENSIONS CHIP CONFIGURATION TO-92, LEAD FORMED asses DRAIN Y T + 4] LEADS FIT INTO an * sossnoatt nage { DIA HOLE ITYP) GATE 4 BEES 1 [_ gotsonss 103-1357 0085-0095 ,~, noke = 4 121592 413} x 049 f. aaa u 5 (af e + SOURCE G ons |} | KL 9055-0055 43) 4143-14397) MIN cosoas! = ureeaia 4 48-5 2 Lead-formed to TO-18 pin circle. Dimensions: .054 x .051 * .020 in. All dimensions in inches and (millimeters) Drain is backside contact 3-82 0-88-6 TOPAZ SEMICONDUCTOR OSE D B coasecs 0001039 5 a WIOIEFVAZ SEMICONDUCTOR =T-3B5-ag= $B41122 ELECTRICAL CHARACTERISTICS (1 = +25C unless otherwise noted) $b1122 # CHARACTERISTIC UNITS TEST CONDITIONS MIN TYP MAX Drain Source 1 BVDSS_ Breakdown Voltage 200 270 v Ip = 10nA, Vas = 0 Gate Source 2 Vestn) Threshold Voltage 0.8 19 2.4 v Vos = Ves: Ip = 1mA Gate-Bod' 3 2 leas Leakage Qurrent 03 1.0 nA Vas = 20V, Vpg =0 4 e tosx_| prain-Source OFF 0.1 1.0 pA Vps = 70V, Vgg = 0.2V 5 Ipss_| Leakage Current 30 nA Vps = 130V, Veg = 0 6 Ipjony) ON Drain Current 0.5 A Vps = 25V, Vag = 15V (Note 1) 7 Static 7.5 10 Ip = 120mA (Note 1), Vag = 5.0V + Tps(on) Drain-Source ohms 8 ON Resistance 1 28 Ip = 20mA, Veg = 2.6V Common-Source Vos = 25V, Ip = 0.54 9 Sts Forward Transcond. 300 mmhos f = 1KHz (Note 1) le Common-Source 10 = | ss input Capacitance 80 3 Common-Source 11 | > | ss Reverse Transfer 13 pF Vos = 28V, Veg = 0 5 Capacitance f = 1MHz Common-Source 12 Coss Qutput Capacitance 10.8 Note 1; Pulse Test 80nSec, 1% Duty Cycle TYPICAL PERFORMANCE CHARACTERISTICS DRAIN-SOURCE ON VOLTAGE DRAIN-SOURCE ON RESISTANCE - -_ -vs GATE-SOURCE VOLTAGE GATE-SOURCE VOLTAGE 20 00 Tam 425C | eoizoma tp = 20 mA Ip = 40 mA ? Ip = 120 3 15 $ fon Sec, 1% DUTY CYCLE I w 8 < z 100 2 6 = ri 8 10 e 3 3 8 3 10 tos Z 0. a > i ! NX g j 8 o 1.0 10 15 20 26 3.0 35 40 as 1.0 30 50 TO 2.0 a By w Vag GATE-SOURCE VOLTAGE (Voits) Vag GATE-SOURCE VOLTAGE (Volts) 3-83