MBR160RL - ON Semiconductor

June, 2006 − Rev. 8 1Publication Order Number:

MBR150/D

MBR150, MBR160

MBR160 is a Preferred Device

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State−of−the−art geometry

features epitaxial construction with oxide passivation and metal

overlap contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

•Low Reverse Current

•Low Stored Charge, Majority Carrier Conduction

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

•These are Pb−Free Devices*

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Polarity: Cathode Indicated by Polarity Band

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage MBR150

MBR160

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage MBR150

MBR160 VR(RMS) 35

42 V

Average Rectified Forward Current (Note 1)

(VR(equiv) v 0.2 VR(dc), TL = 90°C,

RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C)

IO1.0 A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz, TL = 70°C)

IFSM 25

(for one

cycle)

Operating and Storage Junction Temperature

Range (Reverse Volt age Applied) TJ, Tstg − 65 to

+150 °C

THERMAL CHARACTERISTICS (Notes 1 and 2)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 80 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERE − 5 0 AN D 60 VOLT

Preferred devices are recommended choices for future use

and best overall value.

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MARKING DIAGRAM

A = Assembly Location

MBR1x0 = Device Code

x = 5 or 6

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

MBR1x0

YYWW G

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

DO−41

AXIAL LEAD

CASE 59

STYLE 1

MBR150, MBR160

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ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 0.1 A)

(iF = 1.0 A)

(iF = 3.0 A)

vF0.550

0.750

1.000

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)

(TL = 25°C)

(TL = 100°C)

iR0.5

5.0

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current*

Figure 3. Forward Power Dissipation

1.4

vF, INSTANTANEOUS VOLTAGE (VOLTS)

1.0

VR, REVERSE VOLTAGE (VOLTS)

40 700

0.1

0.05

0.001

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.00

4.0

2.0

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

PF(AV), AVERAGE FORWARD

0.1

0.60.2 0.4 0.8 1.0

50 6010 20 30

3.0 4.0 5.0

01.6

5.0

3.0

1.0

, REVERSE CURRENT (mA)

0.2

0.5

1.0

0.02

0.01

0.005

0.002

TJ = 150°C100°C

25°C

IPK/IAV = 20

SQUARE

WAVE

TJ = 150°C

*The curves shown are typical for the highest voltage device in the volt

age grouping. Typical reverse current for lower voltage selections can

be estimated from these same curves if VR i s s u fficiently below rated VR

125°C

5.0

2.0

100°C

75°C

25°C

POWER DISSIPATION (WATTS)

1.2

0.07

0.05

0.03

0.02

0.2

0.3

0.5

0.7

2.0

3.0

5.0

7.0

MBR150, MBR160

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THERMAL CHARACTERISTICS

Figure 4. Thermal Response

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k

0.07

0.05

0.03

0.02

0.01

0.1

t, TIME (ms)

0.7

0.5

0.3

0.2

1.0

ZqJL(t) = ZqJL • r(t)

Ppk Ppk

TIME

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak

of an equivalent square

power pulse.

DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where

DTJL = the increase in junction temperature above the lead

temperature r(t) = normalized value of transient thermal resistance

at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of

transient thermal resistance at time, t1 + tp.

Figure 5. Steady−State Thermal Resistance Figure 6. Typical Capacitance

3/40

L, LEAD LENGTH (INCHES)

VR, REVERSE VOLTAGE (VOLTS)

50 800

RJL, THERMAL RESISTANCE,

3/81/8 1/4 1/2 5/8 7/8 1.0 60 7010 20 30 40

100

200

C, CAPACITANCE (pF)

JUNCTION−TO−LEAD ( C/W)°

BOTH LEADS TO HEATSINK,

EQUAL LENGTH

MAXIMUM

TYPICAL

10090

TJ = 25°C

f = 1 MHz

NOTE 1. — MOUNTING DATA:

Data shown for thermal resistance junction−to−ambient

(RqJA) for the mounting shown is to be used as a typical

guideline values for preliminary engineering or in case the

tie point temperature cannot be measured.

Typical Values for RqJA in Still Air

Mounting

Method

Lead Length, L (in) RqJA

1/8 1/4 1/2 3/4

1 52 65 72 85 °C/W

2 67 80 87 100 °C/W

3 — 50 °C/W

NOTE 2. — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads)

TA(A) TA(K)

TL(A) TC(A) TJTC(K) TL(K)

RqS(A) RqL(A) RqJ(A) RqJ(K

)

RqL(K) RqS(K)

MBR150, MBR160

http://onsemi.com

Use of the above model permits junction to lead thermal

resistance for any mounting configuration to be found. For

a given total lead length, lowest values occur when one side

of the rectifier is brought as close as possible to the heatsink.

Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature

TL = Lead Temperature TJ = Junction Temperature

RqS = Thermal Resistance, Heatsink−to−Ambient

RqL = Thermal Resistance, Lead−to−Heatsink

RqJ = Thermal Resistance, Junction−to−Case

PD = Power Dissipation

Mounting Method 1

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

Mounting Method 3

P.C. Board with

1−1/2″ x 1−1/2″

copper surface.

BOARD GROUND

PLANE

VECTOR PIN MOUNTING

Mounting Method 2

ÉÉÉÉÉÉÉÉ

L = 3/8″

(Subscripts A and K refer to anode and cathode sides,

respectively .) Values for thermal resistance components are:

RqL = 100°C/W/in typically and 120°C/W/in maximum.

RqJ = 36°C/W typically and 46°C/W maximum.

NOTE 3. — HIGH FREQUENCY OPERATION:

Since current flow in a Schottky rectifier is the result of

majority carrier conduction, it is not subject to junction

diode forward and reverse recovery transients due to

minority carrier injection and stored charge. Satisfactory

circuit analysis work may be performed by using a model

consisting of an ideal diode in parallel with a variable

capacitance. (See Figure 6)

Rectification efficiency measurements show that

operation will be satisfactory up to several megahertz. For

example, relative waveform rectification efficiency is

approximately 70 percent at 2 MHz, e.g., the ratio of dc

power to RMS power in the load is 0.28 at this frequency,

whereas perfect rectification would yield 0.406 for sine

wave inputs. However, in contrast to ordinary junction

diodes, the loss in waveform efficiency is not indicative of

power loss: it is simply a result of reverse current flow

through the diode capacitance, which lowers the dc output

voltage.

ORDERING INFORMATION

Device Package Shipping†

MBR150 Axial Lead* 1000 Units / Bag

MBR150G Axial Lead* 1000 Units / Bag

MBR150RL Axial Lead* 5000 / Tape & Reel

MBR150RLG Axial Lead* 5000 / Tape & Reel

MBR160 Axial Lead* 1000 Units / Bag

MBR160G Axial Lead* 1000 Units / Bag

MBR160RL Axial Lead* 5000 / Tape & Reel

MBR160RLG Axial Lead* 5000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

MBR150, MBR160

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PACKAGE DIMENSIONS

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F−−− 1.27−−− 0.050

K25.40 −−−1.000 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO−41 OUTLINE SHALL APPLY

4. POLARITY DENOTED BY CATHODE BAND.

5. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

AXIAL LEAD

CASE 59−10

ISSUE U

POLARITY INDICATOR

OPTIONAL AS NEEDED

(SEE STYLES) STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

MBR150/D

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