JTDA50 - GHz Technology, Inc.

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

JTDA 50

50 Watts, 36 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

The JTDA 50 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 960-1215 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and output prematch for

broadband capability. Low thermal resistance package reduces junction

temperature, extend s life.

CASE OUTLINE

55AT, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 220 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage 55 Volts

BVebo Emitter to Base Voltage 3.5 Volts

Ic Collector Current 7.0 Amps

Maximu m Temperatures

Storage Temperature - 65 to + 200 C

Operating Junction Temperature + 200 C

SEE NOTE BELOW

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout

ηc

VSWR

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 960-1215 MHz

Vcc = 36 Volts

PW = 10 µsec

DF = 20%

F = 1090 MHz

7.0 40

10:1

Watts

BVebo

BVces

Cob

hFE

θjc2

Emitter to Base Breakdown

Collector to Emitter Breakdo wn

Capacitance Collector to Base

DC - Current Gain

Thermal Resistance

Ie = 25 mA

Ic = 25 mA

Vcb = 36V

Ic = 750 mA, Vce = 5 V

3.5

20 100

0.8

Volts

C/W

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the

mounting area , refe r to 5 5AW.

Issue June, 1996