LT5560
1
5560f
0.01MHz to 4GHz
Low Power Active Mixer
The LT
®
5560 is a low power, high performance broad-
band active mixer. This double-balanced mixer can be
driven by a single-ended LO source and requires only
–2dBm of LO power. The balanced design results in
low LO leakage to the output, while the integrated input
amplifi er provides excellent LO to IN isolation. The sig-
nal ports can be impedance matched to a broad range
of frequencies, which allows the LT5560 to be used as
an up- or down-conversion mixer in a wide variety of
applications.
The LT5560 is characterized with a supply current of 10mA;
however, the DC current is adjustable, which allows the
performance to be optimized for each application with a
single resistor. For example, when biased at its maximum
supply current (13.4mA), the typical upconverting mixer
IIP3 is +10.8dBm for a 900MHz output.
■ Portable Wireless
■ CATV/DBS Receivers
■ WiMAX Radios
■ PHS Basestations
■ RF Instrumentation
■ Microwave Data Links
■ VHF/UHF 2-Way Radios
■ Up or Downconverting Applications
■ Noise Figure: 9.3dB Typical at 900MHz Output
■ Conversion Gain: 2.4dB Typical
■ IIP3: 9dBm Typical at ICC = 10mA
■ Adjustable Supply Current: 4mA to 13.4mA
■ Low LO Drive Level: –2dBm
■ Single-Ended or Differential LO
■ High Port-to-Port Isolation
■ Enable Control with Low Off-State Leakage Current
■ Single 2.7V to 5V Supply
■ Small 3mm × 3mm DFN Package
Low Cost 900MHz Downconverting Mixer
APPLICATIO S
U
FEATURES DESCRIPTIO
U
TYPICAL APPLICATIO
U
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
IFOUT and IM3 Levels
vs RF Input Power
1
2
3
4
8
9
7
6
5
IN+
IN–
LO–
ENEN
OUT+
OUT–
LO+
U1
LT5560
PGND
RFIN
900MHz
LOIN
760MHz
IFOUT
140MHz
VCC
15nH
100pF
100pF
4.7pF
6.8nH
270nH
5560 TA01
270nH
15nH
6.8nH
270nH
1nF
1µF
2.7V TO 5.3V
33pF4.7pF
100pF 4.7pF
4.7pF
RF INPUT POWER (dBm)
–80
POWER LEVEL (dBm/Tone)
–60
–20
10
–70
–40
0
–30
–50
–10
–16 –12 –8 –4
5560 TA02
0–18–20 –14 –10 –6 –2
IM3
IFOUT
TA = 25°C
VCC = 3V
ICC = 13.3mA
fLO = 760MHz
fIF = 140MHz
LT5560
2
5560f
DC ELECTRICAL CHARACTERISTICS
Supply Voltage .........................................................5.5V
Enable Voltage ................................ –0.3V to VCC + 0.3V
LO Input Power (Differential) .............................+10dBm
Input Signal Power (Differential) ........................+10dBm
IN+, IN– DC Currents ..............................................10mA
OUT+, OUT– DC Current .........................................10mA
TJMAX .................................................................... 125°C
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range ...................–65°C to 125°C
(Note 1)
V
CC = 3V, EN = 3V, TA = 25°C, unless otherwise noted. Test circuit
shown in Figure 1. (Note 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (VCC)
Supply Voltage 2.7 3 5.3 V
Supply Current VCC = 3V, R1 = 3Ω10 12 mA
Shutdown Current EN = 0.3V, VCC = 3V 0.1 10 µA
Enable (EN) Low = Off, High = On
EN Input High Voltage (On) 2V
EN Input Low Voltage (Off) 0.3 V
Enable Pin Input Current EN = 3V
EN = 0.3V
25
0.1
µA
µA
Turn On Time 2µs
Turn Off Time 5µs
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
TOP VIEW
DD PACKAGE
8-LEAD (3mm × 3mm) PLASTIC DFN
5
6
7
8
4
3
2
1LO–
EN
IN+
IN–
LO+
VCC
OUT+
OUT–
9
TJMAX = 125°C, θJA = 43°C/W
EXPOSED PAD (PIN 9) IS GND
MUST BE SOLDERED TO PCB
ORDER PART NUMBER DD PART MARKING
LT5560EDD LCBX
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
Signal Input Frequency Range (Note 4) Requires External Matching < 4000 MHz
LO Input Frequency Range (Note 4) Requires External Matching < 4000 MHz
Signal Output Frequency Range (Note 4) Requires External Matching < 4000 MHz
(Notes 2 and 3)
LT5560
3
5560f
AC ELECTRICAL CHARACTERISTICS
VCC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone
IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. Test circuits are shown in Figures 1, 2 and 3. (Notes 2 and 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Signal Input Return Loss Z = 50Ω, External Match 15 dB
LO Input Return Loss Z = 50Ω, External Match 15 dB
Signal Output Return Loss Z = 50Ω, External Match 15 dB
LO Input Power –6 to 1 dBm
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
2.7
2.4
1.2
dB
dB
dB
Conversion Gain vs Temperature TA = –40°C to 85°C, fOUT = 900MHz – 0.015 dB/°C
Input 3rd Order Intercept fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
9.6
9.0
8.0
dBm
dBm
dBm
Input 2nd Order Intercept fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
46
47
30
dBm
dBm
dBm
Single Sideband Noise Figure fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
8.8
9.3
10.3
dB
dB
dB
IN to LO Isolation (with LO Applied) fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
69
64
64
dB
dB
dB
LO to IN Leakage fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
–63
–54
–36
dBm
dBm
dBm
LO to OUT Leakage fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
–44
–41
–36
dBm
dBm
dBm
Input 1dB Compression Point fIN = 70MHz, fOUT = 450MHz
fIN = 140MHz, fOUT = 900MHz
fIN = 140MHz, fOUT = 1900MHz
0.4
–2.8
–0.8
dBm
dBm
dBm
Upconverting Mixer Confi guration: VCC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO =
–2dBm, unless otherwise noted. High side LO for 450MHz tests, low side LO for 900MHz and 1900MHz tests. Test circuits are shown in
Figures 1 and 3. (Notes 2, 3 and 5)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
2.7
2.6
2.3
dB
dB
dB
Conversion Gain vs Temperature TA = – 40°C to 85°C, fIN = 900MHz – 0.015 dB/°C
Input 3rd Order Intercept fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
10.1
9.7
5.6
dBm
dBm
dBm
Single Sideband Noise Figure fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
10.5
10.1
10.8
dB
dB
dB
Downconverting Mixer Confi guration: VCC = 3V, EN = 3V, TA = 25°C, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz),
PLO = –2dBm, unless otherwise noted. High side LO for 450MHz tests, low side LO for 900MHz and 1900MHz tests. Test circuits are
shown in Figures 2 and 3. (Notes 2, 3 and 5)
LT5560
4
5560f
VOLTAGE (V)
2.5
8
CURRENT (mA)
9
10
11
12
3 3.5 4 4.5
5560 G01
5 5.5
25°C
85°C
–40°C
VOLTAGE (V)
2.5
0.0
CURRENT (µA)
0.2
0.4
0.8
1.0
3 3.5 4 4.5
5560 G02
0.6
5 5.5
25°C
85°C
–40°C
AC ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Each set of frequency conditions requires an appropriate test board.
Note 3: Specifi cations over the –40°C to +85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Supply Current
vs Supply Voltage
Shutdown Current
vs Supply Voltage
TYPICAL DC PERFOR A CE CHARACTERISTICS
UW
(Test Circuit Shown in Figure 1)
PARAMETER CONDITIONS MIN TYP MAX UNITS
IN to LO Isolation (with LO Applied) fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
52
52
25
dB
dB
dB
LO to IN Leakage fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
–52
–57
–37
dBm
dBm
dBm
LO to OUT Leakage fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
–47
–63
–24
dBm
dBm
dBm
2RF – 2LO Output Spurious (Half IF)
Product (fIN = fLO + fOUT/2)
450MHz: fIN = 485MHz, fOUT = 70MHz
900MHz: fIN = 830MHz, fOUT = 140MHz
1900MHz: fIN = 1830MHz, fOUT = 140MHz
–68
–69
–47
dBc
dBc
dBc
3RF – 3LO Output Spurious (1/3 IF)
Product (fIN = fLO + fOUT/3)
450MHz: fIN = 496.7MHz, fOUT = 69.9MHz
900MHz: fIN = 806.7MHz, fOUT = 140.1MHz
1900MHz: fIN = 1806.7MHz, fOUT = 140.1MHz
–79
–76
–62
dBc
dBc
dBc
Input 1dB Compression Point fIN = 450MHz, fOUT = 70MHz
fIN = 900MHz, fOUT = 140MHz
fIN = 1900MHz, fOUT = 140MHz
–0.8
0
–2.2
dBm
dBm
dBm
Note 4: Operation over a wider frequency range is possible with reduced
performance. Consult the factory for information and assistance.
Note 5: SSB Noise Figure measurements are performed with a small-
signal noise source and bandpass fi lter on the RF input (downmixer) or
output (upmixer), and no other RF input signal applied.
Downconverting Mixer Confi guration: VCC = 3V, EN = 3V, TA = 25°C,
PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –2dBm, unless otherwise noted. High side LO for 450MHz tests,
low side LO for 900MHz and 1900MHz tests. Test circuits are shown in Figures 2 and 3. (Notes 2, 3 and 5)
LT5560
5
5560f
GAIN (dB)
0
DISTRIBUTION (%)
10
30
40
50
60
5560 G09
20
–45°C
+25°C
+90°C
1.7 1.9 2.1 2.5 2.7 3.1 3.3
2.9
2.3 3.5
IIP3 (dBm)
7.8 8.2 8.6 9.4 9.8
0
DISTRIBUTION (%)
5
15
20
25
45
5560 G10
10
9.0 10.2
30
35
40
–45°C
+25°C
+90°C
SSB NOISE FIGURE (dB)
0
DISTRIBUTION (%)
10
30
40
50
60
5560 G11
20
–45°C
+25°C
+90°C
7.6 8.0 8.4 9.2 9.5 10.0
8.8 10.4
RF OUTPUT FREQUENCY (MHz)
GAIN (dB), IIP3 (dBm)
5560 G03
850 870 930910890 950
0
2
4
6
8
10
1
3
5
7
9
11
4
6
8
10
12
14
5
7
9
11
13
15
25°C
85°C
–40°C
SSB NF
IIP3
GAIN
NOISE FIGURE (dB)
LO INPUT POWER (dBm)
–10
–2
0
2
4
6
10
–8 –6 –4 –2
5560 G04
02
8
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°C
IIP3
GAIN
7
NOISE FIGURE (dB)
9
11
13
5560 G05
15
17
8
10
12
14
16
LO INPUT POWER (dBm)
–10 –8 –6 –4 –2 0 2
25°C
85°C
–40°C
LO FREQUENCY (MHz)
700
LEAKAGE (dBm)
–30
–20
–10
820
5560 G06
–40
–50
740 780
720 840
760 800 860
–60
–70
0
LO-OUT
LO-IN
VOLTAGE (V)
2.5 3.5 4.5 5
5560 G07
4
10
11
12
2
8
6
3
9
0
1
7
5
345.5
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°CIIP3
GAIN
IF INPUT POWER (dBm)
–20
OUTPUT POWER (dBm/Tone)
–60
–40
0
5560 G08
–80
–100 –15 –10 –5
0
–20
25°C
85°C
–40°C
IM3
RFOUT
IM2
Conversion Gain, IIP3 and SSB NF
vs RF Output Frequency
Conversion Gain and IIP3
vs LO Input Power
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
Conversion Gain and IIP3
vs Supply Voltage
RFOUT, IM3 and IM2 vs
IF Input Power (Two Input Tones)
TYPICAL AC PERFOR A CE CHARACTERISTICS
UW
900MHz Upconverting Mixer Application:
VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz,
PLO = –2dBm, output measured at 900MHz, unless otherwise noted. (Test circuit shown in Figure 1)
Gain Distribution at 900MHz
IIP3 Distribution at 900MHz
SSB Noise Figure Distribution
at 900MHz
LT5560
6
5560f
RF OUTPUT FREQUENCY (MHz)
GAIN (dB), IIP3 (dBm)
5560 G12
350 400 500450 550
0
2
4
6
8
10
1
3
5
7
9
11
25°C
85°C
–40°C
IIP3
GAIN
RF OUTPUT FREQUENCY (MHz)
NOISE FIGURE (dB)
5560 G13
350 400 500450 550
4
6
8
10
12
5
7
9
11
13
14
25°C
85°C
–40°C
–90
–80
–60
–50
–40
0
5560 G14
–70
–30
–20
–10
IF INPUT POWER (dBm)
–20
OUTPUT POWER (dBm/Tone)
0
–15 –10 –5
25°C
85°C
–40°C
IM3
RFOUT
IM2
LO INPUT POWER (dBm)
–10
0
2
4
6
8
12
–8 –6 –4 –2
5560 G15
02
10
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°CIIP3
GAIN
LO INPUT POWER (dBm)
–10
6
NOISE FIGURE (dB)
7
9
10
11
16
13
–6 –2 0
5560 G16
8
14
15
12
–8 –4 2
25°C
85°C
–40°C
LO FREQUENCY (MHz)
350
–70
–60
–50
–40
–30
–20
0
400 450 500 550
5560 G17
600 650
–10
LEAKAGE (dBm)
LO-OUT
LO-IN
RF OUTPUT FREQUENCY (MHz)
1800
GAIN (dB), IIP3 (dBm)
3
9
10
11
1950
5560 018
0
1
7
5
2
8
–1
6
4
1850 1900 2000
25°C
85°C
–40°C
IIP3
GAIN
RF OUTPUT FREQUENCY (MHz)
NOISE FIGURE (dB)
5560 G19
1800 1850 19501900 2000
4
6
8
10
12
5
7
9
11
13
14
25°C
85°C
–40°C
IF INPUT POWER (dBm)
–20
OUTPUT POWER (dBm/Tone)
–40
–30
–20
0
5560 G20
–50
–60
–80 –15 –10 –5
–70
0
–10
25°C
85°C
–40°C
IM3
RFOUT
IM2
TYPICAL AC PERFOR A CE CHARACTERISTICS
UW
450MHz Upconverting Mixer Application:
VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 70MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 520MHz,
PLO = –2dBm, output measured at 450MHz, unless otherwise noted. (Test circuit shown in Figure 3)
Conversion Gain and IIP3
vs RF Output Frequency
SSB Noise Figure
vs RF Output Frequency
RFOUT, IM3 and IM2 vs IF Input
Power (Two Input Tones)
Conversion Gain and IIP3
vs LO Input Power
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
Conversion Gain and IIP3
vs RF Output Frequency
SSB Noise Figure
vs RF Output Frequency
RFOUT, IM3 and IM2 vs IF Input
Power (Two Input Tones)
1900MHz Upconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for
2-tone IIP3 tests, Δf = 1MHz), fLO = 1760MHz, PLO = –2dBm, output measured at 1900MHz, unless otherwise noted. (Test circuit shown
in Figure 1)
LT5560
7
5560f
LO INPUT POWER (dBm)
–10
10
8
6
4
2
0
–2
–4 –4 0
5560 G21
–8 –6 –2 2
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°C
IIP3
GAIN
LO INPUT POWER (dBm)
–10
7
9
11
13
15
19
–8 –6 –4 –2
5560 G22
02
17
NOISE FIGURE (dB)
25°C
85°C
–40°C
LO FREQUENCY (MHz)
1660
LEAKAGE (dBm)
–30
–20
1860
5560 G23
–40
–50 1710 1760 1810
0
–10
LO-OUT
LO-IN
RF INPUT FREQUENCY (MHz)
700
–1
1
3
5
7
11
800 900 1000 1100
5560 G24
1200
9
3
5
7
9
11
15
13
GAIN (dB), IIP3 (dBm)
NOISE FIGURE (dB)
25°C
85°C
–40°C
IIP3
GAIN
SSB NF
LO INPUT POWER (dBm)
–10
12
10
8
6
4
2
0
–2 –4 0
5560 G25
–8 –6 –2 2
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°C
IIP3
GAIN
LO INPUT POWER (dBm)
–10
7
NOISE FIGURE (dB)
9
11
13
15
17
–8 –6 –4 –2
5560 G26
02
25°C
85°C
–40°C
LO FREQUENCY (MHz)
500
LEAKAGE (dBm)
–50
–40
–30
800 1000
5560 G27
–60
–70
–80 600 700 900
–20
–10
0
1100
LO-IN
LO-OUT
RF INPUT POWER (dBm)
OUTPUT POWER (dBm)
5560 G28
–20 –15 –5–10 0
–100
–80
–60
–40
–20
0
–90
–70
–50
–30
–10
10
TA = 25°C
fLO = 760MHz
fIF = 140MHz
3RF – 3LO
fRF = 806.7MHz
IFOUT
fRF = 900MHz
2RF – 2LO
fRF = 830MHz
LO INPUT POWER (dBm)
–10 –8 –6 –4 –2
5560 G29
02
–110
–100
–90
–80
–70
–50
–60
OUTPUT POWER (dBm)
TA = 25°C
fLO = 760MHz
fIF = 140MHz
3RF – 3LO
fRF = 806.7MHz
2RF – 2LO
fRF = 830MHz
Conversion Gain and IIP3
vs LO Input Power
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
Conversion Gain, IIP3 and SSB NF
vs RF Input Frequency
Conversion Gain and IIP3
vs LO Input Power
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
IFOUT, 2 × 2 and 3 × 3 Spurs vs
RF Input Power (Single Input Tone)
2 × 2 and 3 × 3 Spurs vs
LO Input Power (Single Input Tone)
TYPICAL AC PERFOR A CE CHARACTERISTICS
UW
1900MHz Upconverting Mixer Application:
VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 140MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 1760MHz,
PLO = –2dBm, output measured at 1900MHz, unless otherwise noted. (Test circuit shown in Figure 1)
900MHz Downconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 900MHz, PIN = –20dBm (–20dBm/tone for
2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz, PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in
Figure 2)
LT5560
8
5560f
VOLTAGE (V)
2.5
GAIN (dB), IIP3 (dBm)
3
9
11
12
10
3.5 4.5 5
5560 G30
1
7
5
2
8
0
6
4
345.5
25°C
85°C
–40°C
IIP3
GAIN
RF INPUT POWER (dBm)
OUTPUT POWER (dBm/Tone)
5560 G31
–20 –16 –4–10–18 –6–12–14 –2–8 0
–80
–60
–40
–20
0
–90
–70
–50
–30
–10
10
IFOUT
IM3
25°C
85°C
–40°C
RF INPUT FREQUENCY (MHz)
GAIN (dB), IIP3 (dBm)
NOISE FIGURE (dB)
5560 G32
350 400 500450 550
–1
3
7
11
1
5
9
13
3
7
11
15
5
9
13
17
25°C
85°C
–40°C
IIP3
GAIN
SSB NF
LO INPUT POWER (dBm)
–10
12
10
8
6
4
2
0
–2 –4 0
5560 G33
–8 –6 –2 2
GAIN (dB), IIP3 (dBm)
25°C
85°C
–40°C
IIP3
GAIN
LO INPUT POWER (dBm)
–10
7
NOISE FIGURE (dB)
9
11
13
15
17
–8 –6 –4 –2
5560 G34
02
25°C
85°C
–40°C
LO FREQUENCY (MHz)
420
LEAKAGE (dBm)
–30
–20
–10
5560 G35
–40
–50
520470 570 620
–60
–70
0
LO-OUT
LO-IN
RF INPUT POWER (dBm)
OUTPUT POWER (dBm)
5560 G36
–20 –15 –5–10 0
–110
–70
–30
–90
–50
–10
10
TA = 25°C
fLO = 520MHz
fIF = 70MHz
3RF – 3LO
fRF = 496.7MHz
IFOUT
fRF = 450MHz
2RF – 2LO
fRF = 485MHz
LO INPUT POWER (dBm)
–10 –8 –6 –4 –2
5560 G37
02
–110
–100
–90
–80
–70
–50
–60
OUTPUT POWER (dBm)
TA = 25°C
fLO = 520MHz
fIF = 70MHz
3RF – 3LO
fRF = 496.7MHz
2RF – 2LO
fRF = 485MHz
Conversion Gain and IIP3
vs Supply Voltage
IFOUT and IM3 vs RF Input Power
(Two Input Tones)
Conversion Gain, IIP3 and SSB NF
vs RF Input Frequency
Conversion Gain and IIP3
vs LO Input Power
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
IFOUT, 2 × 2 and 3 × 3 Spurs vs
RF Input Power (Single Input Tone)
2 × 2 and 3 × 3 Spurs vs
LO Input Power (Single Input Tone)
TYPICAL AC PERFOR A CE CHARACTERISTICS
UW
900MHz Downconverting Mixer Application:
VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 900MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = 760MHz,
PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2)
450MHz Downconverting Mixer Application: VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 450MHz, PIN = –20dBm (–20dBm/tone for
2-tone IIP3 tests, Δf = 1MHz), fLO = 520MHz, PLO = –2dBm, output measured at 70MHz, unless otherwise noted. (Test circuit shown in
Figure 3)
LT5560
9
5560f
INPUT FREQUENCY (MHz)
1700
12
10
8
6
4
2
0
1850 1950
5560 G38
1750 1800 1900 2000
GAIN, NF (dB), IIP3 (dBm)
25°C
85°C
–40°C
SSB NF
IIP3
GAIN
LO INPUT POWER (dBm)
–10
–2
0
2
4
6
10
–8 –6 –4 –2
5560 G39
02
8
–4
–2
0
2
4
8
6
GAIN (dB)
IIP3 (dBm)
25°C
85°C
–40°C
IIP3
GAIN
LO INPUT POWER (dBm)
–10
7
NOISE FIGURE (dB)
9
11
13
15
17
–8 –6 –4 –2
5560 G40
02
25°C
85°C
–40°C
LO FREQUENCY (MHz)
1560
–50
–40
–30
–20
0
1610 1660 1710 1760
5560 G41
1810 1860
–10
LEAKAGE (dBm)
LO-OUT
LO-IN
RF INPUT POWER (dBm)
OUTPUT POWER (dBm)
5560 G42
–20 –15 –5–10 0
–70
–30
–90
–50
–10
10
TA = 25°C
fLO = 1760MHz
fIF = 140MHz
3RF – 3LO
fRF = 1806.7MHz
IFOUT
fRF = 1900MHz
2RF – 2LO
fRF = 1830MHz
LO INPUT POWER (dBm)
–10 –8 –6 –4 –2
5560 G43
02
–100
–90
–80
–70
–50
–40
–60
OUTPUT POWER (dBm)
TA = 25°C
fLO = 1760MHz
fIF = 140MHz
3RF – 3LO
fRF = 1806.7MHz
2RF – 2LO
fRF = 1830MHz
Conversion Gain, IIP3 and SSB NF
vs RF Input Frequency
Conversion Gain and IIP3
vs LO Input Power
TYPICAL AC PERFOR A CE CHARACTERISTICS
UW
1900MHz Downconverting Mixer Application:
VCC = 3V, ICC = 10mA, EN = 3V, TA = 25°C, fIN = 1900MHz, PIN = –20dBm (–20dBm/tone for 2-tone IIP3 tests, Δf = 1MHz),
fLO = 1760MHz, PLO = –2dBm, output measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2)
SSB Noise Figure
vs LO Input Power
LO-IN and LO-OUT Leakage
vs LO Frequency
IFOUT, 2 × 2 and 3 × 3 Spurs vs
RF Input Power (Single Input Tone)
2 × 2 and 3 × 3 Spurs vs
LO Input Power (Single Input Tone)
LT5560
10
5560f
PI FU CTIO S
UUU
LO–
, LO+ (Pins 1, 8): Differential Inputs for the Local
Oscillator Signal. The LO input impedance is approxi-
mately 180Ω, thus external impedance matching is
required. The LO pins are internally biased to approxi-
mately 1V below VCC; therefore, DC blocking capacitors
are required. The LT5560 is characterized and production
tested with a single-ended LO drive, though a differential
LO drive can be used.
EN (Pin 2): Enable Pin. An applied voltage above 2V will
activate the IC. For VEN below 0.3V, the IC will be shut
down. If the enable function is not required, then this pin
should be connected to VCC. The typical enable pin input
current is 25µA for EN = 3V. The enable pin should not be
allowed to fl oat because the mixer may not turn on reliably.
Note that at no time should the EN pin voltage be allowed
to exceed VCC by more than 0.3V.
IN+
, IN– (Pins 3, 4): Differential Inputs. These pins should be
driven with a differential signal for optimum performance.
Each pin requires a DC current path to ground. Resistance
to ground will cause a decrease in the mixer current. With
0Ω resistance, approximately 6mA of DC current fl ows
out of each pin. For lowest LO leakage to the output, the
DC resistance from each pin to ground should be equal.
An impedance transformation is required to match the
differential input to the desired source impedance.
OUT–
, OUT+ (Pins 5, 6): Differential Outputs. An imped-
ance transformation may be required to match the outputs.
These pins require a DC current path to VCC .
VCC (Pin 7): Power Supply Pin for the Bias Circuits.
Typical current consumption is 1.5mA. This pin should
be externally bypassed with a 1nF chip capacitor.
Exposed Pad (Pin 9): PGND. Circuit Ground Return for
the Entire IC. This must be soldered to the printed circuit
board ground plane.
LT5560
11
5560f
BLOCK DIAGRA
W
PGND
IN+
IN–
OUT+
OUT–
INPUT BUFFER
AMPLIFIER
EN
5560 BD
1 8
3
4
6
5
2 7
LO–
9
LO+
DOUBLE-
BALANCED
MIXER
BIAS
VCC
LT5560
12
5560f
TEST CIRCUITS
Component Values for fOUT = 900MHz, fIN = 140MHz and fLO = 760MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 22pF 0402 AVX 04025A220JAT L1, L2 18nH 1005 Toko LL1005-FH18NJ
C3, C5 100pF 0402 AVX 04025A101JAT L3, L4 27nH 1005 Toko LL1005-FH27NJ
C4 1pF 0402 AVX 04025A1R0BAT L5 12nH 1005 Toko LL1005-FH12NJ
C6, C9 1nF 0402 AVX 04023C102JAT R1 3Ω0402
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA T1 1:1 Coilcraft WBC1-1TL
C10 2.2pF 0402 AVX 04025A2R2BAT T2 4:1 TDK HHM1515B2
Note: C7 not used.
Component Values for fOUT = 1900MHz, fIN = 140MHz and fLO = 1760MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 22pF 0402 AVX 04025A220JAT L1, L2 18nH 1005 Toko LL1005-FH18NJ
C3 100pF 0402 AVX 04025A101JAT L3, L4 3.9nH 1005 Toko LL1005-FH3N9S
C7 1.5pF 0402 AVX 04025A1R5BAT L5 5.6nH 1005 Toko LL1005-FH5N6S
C6, C9 1nF 0402 AVX 04023C102JAT R1 3Ω0402
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA T1 1:1 Coilcraft WBC1-1TL
C10 1pF 0402 AVX 04025A1R0BAT T2 1:1 TDK HHM1525
Note: C4 and C5 are not used.
Figure 1. Test Schematic for 900MHz and 1900MHz Upconverting
Mixer Applications with 140MHz Input
OUT
1
2
3
1
2
2
13
344
8
7
6
5
IN+
IN–
LO–
ENEN
OUT+
OUT–
LO+
LT5560
PGND
IN
6
45
LOIN
VCC
C4
C7
L5
C3
C5
C1
C6 C8
R1
L1
L2
L3
L4 C10
T2
T1
C9 VCC
5560 F01
LT5560
13
5560f
TEST CIRCUITS
Component Values for fIN = 900MHz, fOUT = 140MHz and fLO = 760MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 2.2pF 0402 AVX 04025A2R2BAT L1, L2 0Ω1005 0Ω Resistor
C2 1.2pF 0402 AVX 04025A1R2BAT L3, L4 220nH 1608 Toko LL1608-FSR22J
C3, C5 100pF 0402 AVX 04025A101JAT L5 12nH 0402 Toko LL1005-FH12NJ
C4 1pF 0402 AVX 04025A1R0BAT R1 3Ω0402
C6 1nF 0402 AVX 04023C102JAT T1 1:1 TDK HHM1522B1
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA T2 4:1 M/A-COM MABAES0061
Note: C7 not used.
Component Values for fIN = 1900MHz, fOUT = 140MHz and fLO = 1760MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 1.0pF 0402 AVX 04025A1R0BAT L1, L2 0Ω1005 0Ω Resistor
C2 1.2pF 0402 AVX 04025A1R2BAT L3, L4 220nH 1608 Toko LL1608-FSR22J
C3 100pF 0402 AVX 04025A101JAT L5 5.6nH 1005 Toko LL1005-FH5N6S
C7 1.5pF 0402 AVX 04025A1R5BAT R1 3Ω0402
C6 1nF 0402 AVX 04023C102JAT T1 2:1 TDK HHM1526
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA T2 4:1 M/A-COM MABAES0061
Note: C4 and C5 are not used.
Figure 2. Test Schematic for 900MHz and 1900MHz Downconverting
Mixer Applications with 140MHz Input
OUT
1
2
3
4
2
2
43
345
8
7
6
5
IN+
IN–
LO–
ENEN
OUT+
OUT–
LO+
LT5560
PGND
IN
1
16
LOIN
VCC
C4
C7
L5
C3
C5
C1
C6 C8
R1
L1
L2 C2
L3
L4
T2
T1
VCC
5560 F02
LT5560
14
5560f
TEST CIRCUITS
Upconverting Mixer Component Values for fIN = 70MHz, fOUT = 450MHz and fLO = 520MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 39pF 0402 AVX 04025390JAT L1, L2 33nH 1005 Toko LL1005-FH33NJ
C3, C5, C6 1nF 0402 AVX 04023C102JAT L3, L4 68nH 1608 Toko LL1608-FS68NJ
C4 1.5pF 0402 AVX 04025A1R5BAT L5 22nH 1005 Toko LL1005-FH22NJ
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA R1 3Ω0402
C10 1.5pF 0402 AVX 04025A1R5BAT T1 1:1 Coilcraft WBC1-1TL
T2 4:1 M/A-COM MABAES0061
Note: C11 is not used.
Downconverting Mixer Component Values for fIN = 450MHz, fOUT = 70MHz and fLO = 520MHz
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C3, C5, C6 1nF 0402 AVX 04023C102JAT L3, L4 0Ω0402 0Ω Resistor
C4 1.5pF 0402 AVX 04025A1R5BAT L5 22nH 0402 Toko LL1005-FH22NJ
C8 1µF 0603 Taiyo Yuden LMK107BJ105MA R1 3Ω0402
C11 5.6pF 0603 AVX 06035A5R6BAT T1 1:1 Coilcraft WBC1-1TL
L1, L2 0Ω0402 0Ω Resistor
T2 16:1 Coilcraft WBC16-1TL
Note: C1 and C10 not used.
Figure 3. Test Schematic for 450MHz Upconverting
Mixer and Downconverting Mixer Applications
OUT
2
3
1
2
2
43
344
8
7
6
5
IN+
IN–
LO–
ENEN
OUT+
OUT–
LO+
LT5560
PGND
IN
6
16
LOIN
VCC
C4
L5
C3
C5
C1
C6 C8
R1
L1
L2
L3
L4
T2
T1
VCC
5560 F03
C11
C10
LT5560
15
5560f
APPLICATIO S I FOR ATIO
WUUU
The LT5560 consists of a double-balanced mixer, a com-
mon-base input buffer amplifi er, and bias/enable circuits.
The IC has been designed for frequency conversion applica-
tions up to 4GHz, though operation over a wider frequency
range may be possible with reduced performance. For best
performance, the input and output should be connected
differentially. The LO input can be driven by a single-ended
source with either low side or high side LO operation. The
LT5560 is characterized and production tested using a
single-ended LO drive.
The quiescent DC current of the LT5560 can be adjusted
from less than 4mA to approximately 13.5mA through
the use of an external resistor. This functionality gives the
user the ability to make application dependent trade-offs
between IIP3 performance and DC current.
Three demo boards, as described in Table 1, are available
depending on the desired application. The listed input
and output frequency ranges are based on measured
12dB return loss bandwidths and the LO port frequency
ranges are based on 10dB return loss bandwidths. The
general circuit topologies are shown in Figures 1, 2 and
3 for DC963B, DC991A and DC1027A, respectively. The
board layouts are shown in Figures 23, 24 and 25. The
low frequency board, DC1027A, can be reconfi gured for
upconverting applications.
Figure 4. Input Port with Lowpass
External Matching Topology
provided through the center-tap of an input transformer,
as shown, or through matching inductors or chokes con-
nected from pins 3 and 4 to ground.
IN+
IN–
INPUT
LT5560
C1
R1
L1
L2
T1
VBIAS
3
4
5560 F04
Signal Input Port
Figure 4 shows a simplifi ed schematic of the differential
input signal port and an example topology for the external
impedance matching circuit. Pins 3 and 4 each source
up to 6mA of DC current. This current can be reduced by
the addition of resistor R1 (adjustable mixer current is
discussed in a later section). The DC ground path can be
Table 1. LT5560 Demo Board Descriptions
MIXER
DESCRIPTION
DEMO
BOARD
NUMBER
INPUT
FREQ.
(MHz)
OUTPUT
FREQ.
(MHz)
LO
FREQ.
(MHz)
Upconverting,
Cellular Band DC963B 50-190 850-940 530-930
Downconverting
Cellular Band DC991A 710-1300 110-170 530-930
Downconverting,
VHF Band DC1027A 115-295 3-60 180-310
Note: Consult factory for demo boards for UMTS, WLAN and other bands.
The lowpass impedance matching topology shown may
be used to transform the differential input impedance
at pins 3 and 4 to match that of the signal source. The
differential input impedances for several frequencies are
listed in Table 2.
Table 2. Input Signal Port Differential Impedance
FREQUENCY
(MHz)
INPUT
IMPEDANCE
(Ω)
REFLECTION COEFFICIENT (ZO = 50Ω)
MAG ANGLE (DEG.)
70 28.5 + j0.8 0.274 177
140 28.5 + j1.6 0.274 174
240 28.6 + j2.7 0.275 171
360 28.6 + j4.0 0.276 167
450 28.6 + j4.9 0.278 163
750 28.8 + j8.2 0.287 153
900 28.8 + j9.8 0.294 148
1500 29.1 + j16.3 0.328 138
1900 29.4 + j20.8 0.357 120
2150 29.6 + j23.6 0.376 114
2450 29.9 + j27.0 0.399 107
3600 31.7 + j42.1 0.499 86.2
LT5560
16
5560f
APPLICATIO S I FOR ATIO
WUUU
The following example demonstrates the design of a
lowpass impedance transformation network for a signal
input at 900MHz.
The simplifi ed input circuit is shown in Figure 5. For this
example, the input transformer has a 1:1 impedance ratio,
so RS = 50Ω. From Table 2, at 900MHz, the differential
input impedance is: RL + jXINT = 28.8 + j9.8Ω. The internal
reactance will be used as part of the impedance matching
network. The matching circuit consists of additional exter-
nal series inductance (L1 and L2) and a capacitance (C1)
in parallel with the 50Ω source impedance. The external
capacitance and inductance are calculated below.
First, calculate the impedance transformation ratio (n)
and the network Q:
n== =
R
R
S
L
50
28 8 174
..
Q=−
()
=n1 0 858.
Next, the capacitance and inductance can be calculated
as follows:
XR
Q
CS
==58 3.Ω
CXpF
C
11303==
ω•.
X
L = RL • Q = 24.7Ω
X
EXT = XL – XINT = 14.9Ω
LL LX nH
EXT EXT
12 22132== = =
ω.
Figure 5. Small Signal Circuit for the Input Port
LT5560
C1
L1
XEXT/2
RS
50Ω
RL
28.1Ω
L2
XEXT/2
XINT/2
XINT/2
3
4
5560 F05
The internal inductance has been accounted for by subtract-
ing the internal reactance (XINT) from the total reactance
(XL). Small inductance values may be realized using high-
impedance printed transmission lines instead of lumped
inductors. The equations above provide good starting
values, though the values may need to be optimized to
account for layout and component parasitics.
LT5560
17
5560f
Table 3 lists actual component values used on the LT5560
evaluation boards for impedance matching at various
frequencies. The measured Input Return Loss vs Fre-
quency performance is plotted for several of the cases
in Figure 6.
Figure 6. Input Return Loss vs Frequency
for Different Matching Values
Table 3. Component Values for Input Matching
CASE
FREQ.
(MHz)
T1
C1
(pF)
L1, L2
(nH)
MATCH BW
(@12dB RL)
1 10 WBC1-1TL 1:1 220 180 6-18
2 70 WBC1-1TL 1:1 39 33 29-102
3 140 WBC1-1TL 1:1 22 18 50-190
4 240 WBC1-1TL 1:1 15 12 115-295
5 4501WBC1-1TL 1:1 NA 0 390-560
6 900 HHM1522B1 1:1 2.2 0 710-1630
7 1900 HHM1526 2:1 1 0 1660-2500
8 2450 HHM1520A2 2:1 1 0 1640-2580
9 3600 HHM1583B1 2:1 0.5 0 3330-3840
Note 1: Series 5.6pF capacitor is used at the input (see Figure 3).
LO Input Port
Figure 7 shows a simplifi ed schematic of the LO input. The
LO input connections drive the bases of the mixer transis-
tors, while a 200Ω resistor across the inputs provides the
impedance termination. The internal 1kΩ bias resistors are
in parallel with the input resistor resulting in a net input
DC resistance of approximately 180Ω. The pins are biased
by an internally generated voltage at approximately
1V below VCC; thus external DC blocking capacitors are
required. If desired, the LO inputs can be driven differen-
tially. The required LO drive at the IC is 240mVRMS (typ)
which can come from a 50Ω source or a higher impedance
such as PECL.
Figure 7. LO Input Schematic
LO+
LO–
C3
C5
L5
LT5560
1k 1k
200Ω
C4C7
8
1
VCC
LOIN
50Ω
VBIAS
5560 F07
FREQUENCY (MHz)
10
–30
RETURN LOSS (dB)
–10
–5
0
100 1000 4000
5560 F06
–15
–20
–25
123
4
5
6
7
9
LT5560
18
5560f
FREQUENCY (MHz)
100
–30
RETURN LOSS (dB)
–10
–5
0
1000 4000
5560 F08
–15
–20
–25
123
4
68
APPLICATIO S I FOR ATIO
WUUU
Figure 8. Typical LO Input Return Loss vs
Frequency for Different Matching Values
Reactive matching from the LO source to the LO input is
recommended to take advantage of the resulting voltage
gain. To assist in matching, Table 4 lists the single-ended
input impedances of the LO input port. Actual com-
ponent values, for several LO frequencies, are listed in
Table 5. Figure 8 shows the typical return loss response
for each case.
Table 4. Single-Ended LO Input Impedance (Parallel Equivalent)
FREQUENCY
(MHz)
INPUT
IMPEDANCE
(Ω)
REFLECTION COEFFICIENT (ZO = 50Ω)
MAG ANGLE (DEG.)
150 161 || –j679 0.529 –9.3
520 142 || –j275 0.494 –23.3
760 130 || –j192 0.475 –33.5
1660 74 || –j98 0.347 –74.5
1760 69 || –j94 0.330 –80.1
2040 60 || –j89 0.308 –90.1
2210 51 || –j91 0.266 –104
3150 50 || –j103 0.235 –104
3340 33 || –j41 0.472 –138
Table 5. Component Values for LO Input Matching
CASE
FREQ.
(MHz)
C4
(pF)
L5
(nH)
C7
(pF)
C3, C5
(pF)
MATCH BW
(@12dB RL)
1 150 8.2 68 - 1000 120-180
2 250 4.7 47 - 1000 195-300
3 520 1.5 22 - 1000 390-605
4 760 1 12 - 100 590-890
5 1200 - 6.8 - 100 850-1430
6 1760 - 4.7 1 10011540-1890
7 2900 - 1 1 10 2690-3120
8 3150 - 0 - 10 2990-3480
Note 1: C5 is not used at 1760MHz
LT5560
19
5560f
APPLICATIO S I FOR ATIO
WUUU
Signal Output Port
A simplifi ed schematic of the output circuit is shown in
Figure 9. The output pins, OUT+ and OUT–, are internally
connected to the collectors of the mixer transistors. These
pins must be biased at the supply voltage, which can be
applied through a transformer center-tap, impedance
matching inductors, RF chokes, or pull-up resistors. With
external resistor R1 = 3Ω (Figures 1 to 3), each OUT pin
draws about 4.5mA of supply current. For optimum per-
formance, these differential outputs should be combined
externally through a transformer or balun.
An equivalent small-signal model for the output is shown
in Figure 10. The output impedance can be modeled as
a 1.2kΩ resistor in parallel with a 0.7pF capacitor. For
low frequency applications, the 0.7nH series bond-wire
inductances can be ignored.
The external components, C2, L3 and L4, form a lowpass
impedance transformation network to match the mixer
output impedance to the input impedance of transformer
T2. The values for these components can be estimated
Figure 9. Output Port Schematic Figure 10. Output Port Small-Signal Model
with External Matching
OUT+
OUT–
0.7pF
LT5560
1.2k
VCC
5560 F09
6
5
using the impedance parameters listed in Table 6 along
with similar equations as used for the input matching net-
work. As an example, at an output frequency of 140MHz
and RL = 200Ω (using a 4:1 transformer for T2),
n== =
R
R
S
L
1082
200 541.
Q=−
()
=n1210.
XR
Q
CS
==515Ω
CXpF
C
==
1221
ω•.
C2 = C – CINT = 1.51pF
X
L = RL• Q = 420Ω
LL XnH
L
34
2239== =
ω
OUT
LT5560
C2 C10
0.7nH
0.7nH
L3
L4
T2
VCC
6
5
5560 F10
OUT+
OUT–
CINT
0.7pF
RINT
1.2k
LT5560
20
5560f
FREQUENCY (MHz)
0 500 1000 2000
–30
RETURN LOSS (dB)
–10
–5
0
1500 2500
5560 F11
–15
–20
–25
7
3
4
68
APPLICATIO S I FOR ATIO
WUUU
In cases where the calculated value of C2 is less than the
internal output capacitance, capacitor C10 can be used to
improve the impedance match.
Figure 11. Output Return Loss vs Frequency
for Different Matching Values
Table 7 lists actual component values used on the
LT5560 evaluation boards for impedance matching at
several frequencies. The measured output return loss
vs frequency performance is plotted for several of the
cases in Figure 11.
Table 6. Output Port Differential Impedance (Parallel Equivalent)
FREQUENCY
(MHz)
OUTPUT
IMPEDANCE
(Ω)
REFLECTION COEFFICIENT (ZO = 50Ω)
MAG ANGLE (DEG.)
70 1098 || –j3185 0.913 –1.8
140 1082 || –j1600 0.912 –3.6
240 1082 || –j974 0.912 –5.9
360 1093 || –j646 0.913 –8.9
450 1083 || –j522 0.913 –11.0
750 1037 || –j320 0.910 –17.8
900 946 || –j269 0.903 –21.1
1500 655 || –j162 0.870 –34.5
1900 592 || –j122 0.865 –44.6
2150 662 || –j108 0.883 –50.0
2450 612 || –j95.7 0.879 –55.4
3600 188 || –j53.1 0.756 –88.7
Table 7. Component Values for Output Matching
CASE
FREQ.
(MHz)
T2
C2
(pF)
L3, L4
(nH)
C10
(pF)
MATCH
BW
(@12dB RL)
1 10 WBC16-1TL 16:1 - 0 - 3-60
2 70 WBC16-1TL 16:1 - 0 -13-60
3 140 MABAES0061
4:1
1.5 220 - 110-170
4 240 MABAES0061
4:1
0.5 120 - 175-300
5 380 MABAES0061
4:1
- 68 - 290-490
6 450 MABAES0061
4:1
- 68 1.5 360-540
7 900 HHM1515B2 4:1 - 27 2.2 850-940
8 1900 HHM1525 1:1 - 3.9 1 1820-2000
Note 1: A better 70MHz match can be realized by adding a shunt 180nH
inductor at the C10 location.
LT5560
21
5560f
R1 (Ω)
0
4
SUPPLY CURRENT (mA)
6
8
10
510 15 20
5560 F13
25
12
14
5
7
9
11
13
30
TA = 25°C
VCC = 3V
SUPPLY CURRENT (mA)
4
GAIN AND NF (dB), IIP3 (dBm)
4
6
8
10 14
5560 F14
2
0
–2 68 12
10
12
14
SSB NF
IIP3
GAIN
TA = 25°C
VCC = 3V
fLO = 760MHz
fIF = 140MHz
PLO = –2dBm
SUPPLY CURRENT (mA)
4
GAIN AND NF (dB), IIP3 (dBm)
4
6
8
10 14
5560 F15
2
0
–2 68 12
10
12
14
SSB NF
IIP3
GAIN
MEASURED WITH InF CAP ACROSS R1
TA = 25°C
VCC = 3V
fLO = 760MHz
fIF = 140MHz
PLO = –2dBm
APPLICATIO S I FOR ATIO
WUUU
Figure 12. Enable Input Circuit
Enable Interface
Figure 12 shows a simplifi ed schematic of the EN pin
interface. The voltage necessary to turn on the LT5560 is
2V. To disable the chip, the enable voltage must be less
than 0.3V. If the EN pin is allowed to fl oat, the chip will tend
to remain in its last operating state, thus it is not recom-
mended that the enable function be used in this manner.
If the shutdown function is not required, then the EN pin
should be connected directly to VCC.
The voltage at the EN pin should never exceed the power
supply voltage (VCC) by more than 0.3V. If this should
occur, the supply current could be sourced through the
EN pin ESD diode, potentially damaging the IC.
Figure 13. Typical Supply Current vs R1 Value
Figure 14. 900MHz Upconverting Mixer Gain,
Noise Figure and IIP3 vs Supply Current
Figure 15. 900MHz Downconverting Mixer Gain,
Noise Figure and IIP3 vs Supply Current
Adjustable Supply Current
The LT5560 offers a direct trade-off between power sup-
ply current and linearity. This capability allows the user
to optimize the performance and power dissipation of
the mixer for a particular application. The supply current
can be adjusted by changing the value of resistor R1 at
the center-tap of the input balun. For downconversion
applications, a bypass capacitor in parallel with R1 may
be desired to minimize noise fi gure. The bypass capacitor
has a greater effect on noise fi gure at larger values of R1.
In upmixer confi gurations, adding a capacitor across R1
has little effect.
Figure 13 shows the supply current as a function of R1.
Note that the current will also be affected by parasitic
resistance in the matching components. Figure 14 il-
lustrates the effect of supply current on Gain, IIP3 and
NF of a 900MHz upconverting mixer. The performance
LT5560
60k
EN
VCC
5560 F12
2
vs current of a 900MHz downconverting mixer is plotted
in Figure 15. In this example, a 1nF capacitor has been
placed in parallel to R1 for best noise fi gure.
LT5560
22
5560f
OUTPUT FREQUENCY (MHz)
170
8
10
14
230 270
5560 F16
6
4
190 210 250 290 310
2
0
12
GAIN (dB), IIP3 (dBm)
fIF = 10MHz
fLO = fRF + fIF
IIP2
IIP3
GAIN
52
58
56
54
50
48
46
44
IIP2 (dBm)
LO INPUT POWER (dBm)
–10
9
11
–4 –2
5560 F17
7
5
–8 –6 02
3
1
12
14
10
8
6
4
GAIN (dB), IIP3 (dBm)
fRF = 140MHz
fIF = 10MHz
fLO = 150MHz
SSB NF
IIP3
GAIN
NOISE FIGURE (dB)
RF INPUT FREQUENCY (MHz)
3300
GAIN NF (dB), IIP3 (dBm)
7
9
11
3700
5560 F18
5
3
6
8
10
4
2
13400 3500 3600 3800
DSB NF
IIP3
GAIN
Figure 16. LT5560 Performance in 240MHz
Upconverting Mixer Application
Figure 17. LT5560 Performance in 140MHz
Downconverting Mixer Application
Figure 18. LT5560 Performance as a
3600MHz Downconverting Mixer
APPLICATIO S I FOR ATIO
WUUU
Application Examples
The LT5560 may be used as an upconverting or
downconverting mixer in a wide variety of applications,
in addition to those identifi ed in the datasheet. The fol-
lowing examples illustrate the versatility of the LT5560.
(The component values for each case can be found in
Tables 3, 5 and 7).
Figure 16 demonstrates gain, IIP3 and IIP2 performance
versus RF Output Frequency for the LT5560 when used
as a 240MHz upconverting mixer. The input frequency
is 10MHz, with an LO frequency of 250MHz. The circuit
uses the topology shown in Figure 1.
The performance in a 140MHz downconverting mixer
application is plotted in Figure 17. In this case the gain,
IIP3 and NF are shown as a function of LO power with an
IF output frequency of 10MHz. The circuit topology for
this case is shown in Figure 3.
The LT5560 operation at higher frequencies is demon-
strated in Figure 18, where the performance of a 3600MHz
downconverting mixer is shown. The conversion gain, IIP3
and DSB NF are plotted for an RF input frequency range
of 3300 to 3800MHz and an IF frequency of 450MHz. The
circuit is the same topology as shown in Figure 2.
LT5560
23
5560f
CDC
CO
C
O
RB
LO
LO
LDC
RA
5560 F19
APPLICATIO S I FOR ATIO
WUUU
Lumped Element Matching
The applications described so far have employed external
transformers or hybrid baluns to realize single-ended to
differential conversions and, in some cases, impedance
transformations. An alternate approach is to use lumped-
element baluns to realize the input or output matching
networks.
A lumped element balun topology is shown in Figure 19.
The desired component values can be estimated using
the equations below, where RA and RB are the terminat-
ing resistances on the unbalanced and balanced ports,
respectively. Variable fC is the desired center frequency.
(The resistances of the LT5560 input and output can be
found in Tables 2 and 6).
LRR
f
OAB
C
=•
••2π
CfRR
O
CAB
=1
2• • • •π
The computed values are approximate, as they don’t ac-
count for the effects of parasitics of the IC and external
components.
Inductor LDC is used to provide a DC path to ground or to
VCC depending on whether the circuit is used at the input
or output of the LT5560. In some cases, it is desirable to
make the value of LDC as large as practical to minimize
loading on the circuit; however, the value can also be op-
timized to tune the impedance match. The shunt inductor,
LO, provides the DC path for the other balanced port.
Capacitor CDC may be required for DC blocking but
can often be omitted if DC decoupling is not required.
Figure 19. Lumped Element Balun
In some applications, CDC is useful for optimizing the
impedance match.
The circuit shown on page 1 illustrates the use of lumped
element baluns. In this example, the LT5560 is used to
convert a 900MHz input signal down to 140MHz using a
760MHz LO signal.
For the 900MHz input, RA = 50Ω and RB = 28Ω (from
Table 2). The actual values used for CO and LO are 4.7pF
and 6.8nH, which agree very closely with the calculated
values of 4.7pF and 6.6nH. The 15nH shunt inductor, in
this case, has been used to optimize the impedance match,
while the 100pF cap provides DC decoupling.
At the 140MHz output, the values used for RA and RB
are 50Ω and 1080Ω (from Table 6), respectively, which
result in calculated values of CO = 4.9pF and LO = 265nH.
These values are very close to the actual values of 4.7pF
and 270nH. A shunt inductor (LDC) of 270nH is used here
and the 33pF blocking cap has been used to optimize the
impedance.
LT5560
24
5560f
APPLICATIO S I FOR ATIO
WUUU
Measured IFOUT and IM3 levels vs RF input power for the
mixer with lumped element baluns are shown on page 1.
Additional performance parameters vs RF input frequency
are plotted in Figure 20.
Figure 20. Performance of 900MHz Downconverting
Mixer with Lumped Element Baluns
Low Frequency Applications
At low IF frequencies, where transformers can be impracti-
cal due to their large size and cost, alternate methods can
be used to achieve desired differential to single-ended
conversions. The examples in Figures 21 and 22 use an
op-amp to demonstrate performance with an output fre-
quency of 450KHz. Pull-up resistors R3 and R4 are used
at the open-collector IF outputs instead of large inductors.
The op-amp provides gain and converts the mixer dif-
ferential outputs to single-ended. At low frequencies, the
LO port can be easily matched with a shunt resistor and
a DC blocking cap. This IF interface circuit can be used
for signals up to 1MHz.
Figure 21 shows an input match that uses a transformer
to present a differential signal to the mixer. A possible
alternative, shown in Figure 22, is to use a single-ended
drive on one input pin, with the other pin grounded. This
approach is more cost effective than the transformer,
however, some performance is sacrifi ced. Another option
is to use a lumped-element balun, which requires only one
more component than the single-ended impedance match,
but could provide better performance. Measured data for
the examples below are summarized in Table 8.
Table 8. Low-Frequency Performance
fIN
(MHz)
fOUT
(MHz)
GC
(dB)
IIP3
(dBm)
DSB NF
(dB)
ICC
(mA)
200 0.45 9 3.8 11.6 14
90 0.45 6.8 3.3 22 18
Figure 21. A 200MHz to 450KHz Downconverter with Active IF Interface
INPUT FREQUENCY (MHz)
800
4
GAIN AND NF (dB), IIP3 (dBm)
5
7
8
9
900 1000
13
5560 F20
6
850 950
10
11
12
SSB NF
IIP3
GAIN
1
2
3
4
8
7
6
5
9
IN+
IN–
LO–
EN
OUT+
OUT–
LO+
PGND
RFIN
200MHz IFOUT
450kHz
LOIN
200.45MHz
VCC
VEN
C3
10nF
C5
10nF
C6
1nF
C11
1µF
C13
1µF
C14
1µF
C8
1µF
C12
1µF
C1
15pF
R1
3Ω
R2
160Ω
R3
200Ω
R4
200Ω
R5
200Ω
R7
51Ω
R8
5.1kΩ
5V
R9
5.1kΩ
R6
200Ω
L2
12nH
L1
12nH
T1
1:1
WBC4-6TL
5560 F21
–
+
U1
LT5560
U2
LT6202
LT5560
25
5560f
Figure 23. Upconverting Mixer Evaluation Board (DC963B)—See Table 1
APPLICATIO S I FOR ATIO
WUUU
Figure 22. 90MHz Downconverter with a Low Cost Discrete
Balun Input and a 450kHz Active IF Interface
1
2
3
4
8
7
6
5
9
IN+
IN–
LO–
EN
OUT+
OUT–
LO+
PGND
RFIN
90MHz IFOUT
450kHz
LOIN
90.45MHz
VCC
VEN
C3
10nF
C5
10nF
C6
1nF
C11
1µF
C13
1µF
C14
1µF
C8
1µF
C12
1µF
R2
160Ω
R3
200Ω
R4
200Ω
R5
200Ω
R7
51Ω
R8
5.1kΩ
5V
R9
5.1kΩ
R6
200Ω
L2
82nH
L1
12nH
5560 F22
–
+
U1
LT5560
U2
LT6202
C1
56pF
LT5560
26
5560f
TYPICAL APPLICATIO S
U
Figure 24. Downconverting Mixer Evaluation Board (DC991A)—See Table 1
Figure 25. HF/VHF/UHF Upconverting or Downconverting
Mixer Evaluation Board (DC1027A)—See Table 1
LT5560
27
5560f
PACKAGE DESCRIPTIO
U
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
DD8 Package
8-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1698)
3.00 ±0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON TOP AND BOTTOM OF PACKAGE
0.38 ± 0.10
BOTTOM VIEW—EXPOSED PAD
1.65 ± 0.10
(2 SIDES)
0.75 ±0.05
R = 0.115
TYP
2.38 ±0.10
(2 SIDES)
14
85
PIN 1
TOP MARK
(NOTE 6)
0.200 REF
0.00 – 0.05
(DD8) DFN 1203
0.25 ± 0.05
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
1.65 ±0.05
(2 SIDES)
2.15 ±0.05
0.50
BSC
0.675 ±0.05
3.5 ±0.05
PACKAGE
OUTLINE
0.25 ± 0.05
0.50 BSC
LT5560
28
5560f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006
LT 0406 • PRINTED IN USA
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512 1KHz to 3GHz High Signal Level
Downconverting Mixer
20dBm IIP3, Integrated LO Buffer, HF/VHF/UHF Optimized
LT5514 Ultralow Distortion, IF Amplifi er/ADC Driver
with Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5518 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and
RF Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting
Mixer
17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting
Mixer
15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5521 10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended
LO Port Operation
LT5522 400MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended
RF and LO Ports
LT5524 Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
LT5525 High Linearity, Low Power Downconverting
Mixer
50Ω Single-Ended LO and RF Ports, 17.6 dBm IIP3 at 1900MHz, ICC = 28mA
LT5526 High Linearity, Low Power Active Mixer 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA,
–65dBm LO-RF Leakage
LT5527 400MHz to 3.7GHz High Signal Level
Downconverting Mixer
IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA,
Single-Ended LO and RF Ports
LT5528 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –66dBc at 2.14GHz
LT5568 700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
22.9dBm OIP3, –160dBm/Hz Noise Floor, –46dBc Image Rejection,
–43dBm LO Leakage
RF Power Detectors
LTC
®
5505 RF Power Detectors with >40dB Dynamic
Range
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Linear Dynamic Range, Low Power Consumption, SC70 Package
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time
LTC5536 Precision 600MHz to 7GHz RF Detector with
Fast Comparater
25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to
+12dBm Input Range
LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply
