Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET VDS (V) -20 rDS(on) () ID (A) 0.130 @ VGS = -4.5 V -2.3 0.190 @ VGS = -2.5 V -1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150C)b TA= 25C V -2.3 ID TA= 70C -1.5 A Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25C Power Dissipationb Unit IDM -10 IS -1.6 1.25 PD TA= 70C W 0.8 TJ, Tstg -55 to 150 C Symbol Limit Unit Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc 100 C/W C/W RthJA RthJA 166 Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-58543--Rev. D, 20-Jul-98 www.vishay.com FaxBack 408-970-5600 2-1 Si2301DS Vishay Siliconix Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = -250 mA -20 VGS(th) VDS = VGS, ID = -250 mA -0.45 Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage VDS = 0 V, VGS = "8 V "100 VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 55C -10 IGSS IDSS V ID(on) rDS(on) DS( ) VDS v -5 V, VGS = -4.5 V -6 VDS v -5 V, VGS = -2.5 V -3 nA mA A VGS = -4.5 V, ID = -2.8 A 0.105 0.130 VGS = -2.5 V, ID = -2.0 A 0.145 0.190 W gfs VDS = -5 V, ID = -2.8 A 6.5 VSD IS = -1.6 A, VGS = 0 V -0.80 -1.2 S 5.8 10 V Dynamicb Total Gate Charge Qg VDS = -6 6V V, VGS = -4.5 45V ID ^ -2.8 2.8 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.70 Input Capacitance Ciss 415 Output Capacitance Coss Reverse Transfer Capacitance Crss 87 td(on) 13.0 25 36.0 60 42 70 34 60 VDS = -6 6V V, VGS = 0, 0 f = 1 MHz MH 0.85 nC C 223 pF F Switchingc Turn-On Time tr Turn-Off Time td(off) tf VDD = -6 6 V V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70627 S-58543--Rev. D, 20-Jul-98 Si2301DS Vishay Siliconix Output Characteristics 10 Transfer Characteristics 10 VGS = 5, 4.5, 4, 3.5, 3 V 2.5 V 6 2V 4 2 TC = -55C 8 I D - Drain Current (A) I D - Drain Current (A) 8 25C 6 125C 4 2 0, 0.5, 1 V 1.5 V 0 0 0 1 2 3 4 5 0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 On-Resistance vs. Drain Current 2.5 3.0 Capacitance 0.5 800 C - Capacitance (pF) r DS(on)- On-Resistance ( ) 2.0 1000 0.6 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 600 Ciss 400 Coss Crss 200 0.1 0 0 0 2 4 6 8 0 10 ID - Drain Current (A) 1.8 VDS = 6 V ID = 2.8 A 1.6 r DS(on)- On-Resistance ( ) (Normalized) 4 3 2 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 70627 S-58543--Rev. D, 20-Jul-98 3 6 9 12 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si2301DS Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150C TJ = 25C 0.4 0.3 ID = 2.8 A 0.2 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD - Source-to-Drain Voltage (V) 2 Threshold Voltage 8 Single Pulse Power 14 0.3 12 10 ID = 250 mA Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) 0.4 0.2 4 0.1 8 TC = 25C Single Pulse 6 0.0 4 -0.1 2 0 -0.2 -50 0 50 100 150 0.01 0.10 TJ - Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70627 S-58543--Rev. D, 20-Jul-98