2N6344G - LITTELFUSE - Datasheet.Live

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

■Blocking Voltage to 800 V

■All Diffused and Glass

Passivated Junctions for

Greater Parameter Uniformity

and Stability

■Small, Rugged, Thermowatt

Construction for Low Thermal

Resistance, High Heat

Dissipation and Durability

■Gate Triggering Guaranteed in

all Four Quadrants

■For 400 Hz Operation,

Consult Factory

■Pb−Free Package is Available

Features

The 2N6344 is designed primarily for full-wave AC control applications,

such as light dimmers, motor controls, heating controls and power

supplies; or wherever full-wave silicon gate controlled solid-state

devices are needed. Triac type thyristors switch from a blocking to

a conducting state for either polarity of applied anode voltage with

positive or negative gate triggering.

Description

Functional Diagram

Additional Information

Pin Out

CASE 221A

STYLE 4

Resources Accessories Samples

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

Rating Symbol Value Unit

*Peak Repetitive Off-State Voltage (Note 1)

(TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)

2N6344

2N6349

VDRM,

VRRM

600

800 V

† On-State RMS Current (TC = +80°C)

Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) IT (RMS)

8.0

4.0 A

† Peak Non−Repetitive Surge Current

(One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current ITSM 100 A

Circuit Fusing Considerations (t = 8.3 ms) I2

t40 A²s

†Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 W

†Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 W

†Peak Gate Current (TC = +80°C, Pulse Width = 2.0 µs) IGM 2.0 A

†Peak Gate Voltage (TC = +80°C, Pulse Width = 2.0 µs) VGM 10 V

†Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings and Thermal Characteristics (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

† Indicates JEDEC Registered Data.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

† Thermal Resistance, Junction to Case R8JC 2.2 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL260 °C

† Indicates JEDEC Registered Data.

Electrical Characteristics - OFF (TC = 25°C unless otherwise noted; Electricals apply in both

directions)

Characteristic Symbol Min Ty p Max Unit

*Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open)

TJ = 25°C

TJ = 100°C

IDRM,

IRRM

- - 10 µA

- - 2.0 mA

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

Electrical Characteristics - ON (TC = 25°C unless otherwise noted; Electricals apply in both

directions)

Characteristic Symbol Min Ty p Max Unit

†Peak On−State Voltage

(ITM = ±11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle ≤ 2%) VTM -1. 3 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ω)

Quadrant I: MT2(+), G(+) Both

IGT

-12 50

Quadrant II: MT2(+), G(−) 2N6349 only - 12 75

Quadrant III: MT2(−), G(−) Both - 20 50

Quadrant IV: MT2(−), G(+) 2N6349 only - 35 75

†MT2(+), G(+); MT2(−), G(−) TC = −40°C - - − 100

†MT2(+), G(−); MT2(−), G(+) TC = −40°C - - − 125

Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω)

Quadrant I: MT2(+), G(+) Both

VGT

− 0.9 2.0

Quadrant II: MT2(+), G(−) 2N6349 only − 0.9 2.5

Quadrant III: MT2(−), G(−) Both − 1. 1 2.0

Quadrant IV: MT2(−), G(+) 2N6349 only − 1. 4 2.5

†MT2(+), G(+); MT2(−), G(−) TC = −40°C - − 2.5

†MT2(+), G(−); MT2(−), G(+) TC = −40°C - − 3.0

Gate Non−Trigger Voltage (Continuous dc)

(VD = Rated VDRM, RL = 10 k Ω, TJ = 100°C) †MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−) VGD 0.2 - - V

†Holding Current (VD = 12 Vdc, Gate Open) TC = 25°C

(Initiating Current = 200 mA) *TC = −40°C

TC = 25°C IH

- 6.0 40 mA

TC = -40°C - - 75

†Turn-On Time (VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt - 8 10 µs

†Indicates JEDEC Registered Data.

Dynamic Characteristics

Characteristic Symbol Min Ty p Max Unit

Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11 A, Commutating di/

dt = 4.0 A/ms, Gate Unenergized, TC = 80°C) dv/dt(c) − 5.0 − V/µs

Voltage Current Characteristic of Triacs (Bidirectional Device)

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

VI tnardauQIII tnardauQ

I tnardauQII tnardauQ

Quadrant Deﬁnitions for a Triac

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

Figure 1. RMS Current Derating

Ratings and Characteristic Curves

Figure 2. On−State Power Dissipation

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

Figure 8. Typical Holding CurrentFigure 7. Maximum On-State Characteristics

Figure 9. Maximum Allowable Surge Current

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 02/15/21

2N6344

Surface Mount – 600-800V

Figure 10. Thermal Response

Dimensions

Part Marking System

1212 33

SEATIN

PLANE

CASE 221A

STYLE 4

Dim Inches Millimeters

Min Max Min Max

A0.590 0.620 14.99 15.75

B0.380 0.420 9.65 10.67

C0.178 0.188 4.52 4.78

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.095 0.105 2.41 2.67

H0.110 0.13 0 2.79 3.30

J0.018 0.024 0.46 0.61

K0.540 0.575 13.72 14.61

L0.060 0.075 1.52 1.91

N0.195 0.205 4.95 5.21

Q0.105 0.115 2.67 2.92

R0.085 0.095 2.16 2.41

S0.045 0.060 1. 14 1.52

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 - 1. 15 -

Z- 0.080 - 2.04

1. Dimensioning And Tolerancing Per Ansi Y14.5m, 1982.

2. Controlling Dimension: Inch.

3. Dimension Z Deﬁnes A Zone Where All Body And Lead Irregularities Are Allowed.

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4Main Terminal 2

Ordering Information

Device Package Shipping†

2N6344 TO-220AB

1000 Units / Box

2N6344G TO-220AB

(Pb-Free)

2N6344G

YMAXX

Y =Year

M =Month

A =Assembly Site

XX =Lot Serial Code

G =Pb-Free Package

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