ZXMS6005DT8 Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE (R) INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits * * * Continuos Drain Source Voltage On-State Resistance Nominal Load Current (VIN = 5V) 60V 200m 1.8A * Clamping Energy 210mJ Description The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications * * * * Lamp Driver Motor Driver Relay Driver Solenoid Driver * * * * * * * * * * * * * * Compact Dual Package Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Over Voltage Protection (active clamp) Thermal Shutdown with Auto Restart Over-Current Protection Input Protection (ESD) High Continuous Current Rating Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability AEC-Q101-006 Short Circuit Reliability Characterized PPAP Capable (Note 4) Mechanical Data * * * * * Case: SM-8 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish e3 Weight: 0.117 grams (approximate) D1 SM-8 IN2 IN1 S1 Top View 1 D2 IN1 D1 S1 D1 IN2 D2 S2 D2 S2 Device Symbol Top View Pin-Out Ordering Information (Note 4) Product ZXMS6005DT8TA Notes: Marking ZXMS6005D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Pin 1 ZXMS 6005D ZXMS6005D = Product Type Marking Code Top View IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 1 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 ADVANCE INFORMATION Functional Block Diagram Application Information * * * * * * * Two completely isolated independent channels Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications C compatible power switch for 12V DC applications Automotive rated Replaces electromechanical relays and discrete circuits Linear Mode Capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to self-protect at low VDS Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units VDS 60 V VDS(SC) 24 V VIN -0.5 to +6 V Continuous Input Current @ -0.2V VIN 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No limit IIN 2 mA Pulsed Drain Current @VIN = 3.3V ( Note 7) IDM 5 A Pulsed Drain Current @VIN = 5V ( Note 7) IDM 6 A IS 2.5 A Pulsed Source Current (Body Diode) ISM 10 A Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V EAS 210 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V Continuous Drain-Source Voltage Drain-Source Voltage For Short Circuit Protection Continuous Input Voltage Continuous Source Current (Body Diode) (Note 5) IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 2 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Symbol Value Units Power Dissipation at TA = +25C (Notes 5 & 8) Linear Derating Factor PD 1.16 9.28 W mW/C Power Dissipation at TA = +25C (Notes 5 & 9) Linear Derating Factor PD 1.67 13.3 W mW/C Power Dissipation at TA = +25C (Notes 6 & 8) Linear Derating Factor PD 2.13 17 W mW/C RJA 108 C/W Thermal Resistance, Junction to Ambient (Notes 5 & 8) Thermal Resistance, Junction to Ambient (Notes 5 & 9) RJA 75 C/W Thermal Resistance, Junction to Case (Notes 6 & 8) RJC 58.7 C/W Thermal Resistance, Junction to Case (Note 10) RJC 26.5 C/W TJ -40 to +150 C TSTG -55 to +150 C Operating Temperature Range Storage Temperature Range Notes: 5. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions. 6. For a dual device surface mounted on FR4 PCB measured at t 10sec. 7. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300s - pulse width limited by junction temperature. Refer to transient thermal impedance graph. 8. For a dual device with one active die. 9. For a dual device with 2 active die running at equal power. 10. Thermal resistance from junction to the mounting surface of the drain pin. Recommended Operating Conditions The ZXMS6005DT8 is optimized for use with C operating from 3.3V and 5V supplies. Symbol Min Max Input Voltage Range Characteristic VIN 0 5.5 Unit V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET to be on VIH 3 5.5 V Low Level Input Voltage for MOSFET to be off VIL 0 0.7 V Peripheral Supply Voltage (voltage to which load is referred) VP 0 24 V IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 3 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 Limited by Over-Current Protection 10 by RDS(on) 1ms 1 DC 100m 10m 1s Single Pulse Tamb=25C 100ms 25X25X1.6mm FR4 10ms Single 1oz Cu One active die Limit of s/c protection 1 10 Max Power Dissipation (W) ID Drain Current (A) Limited 1.6 1.4 2 active die 1.2 1.0 0.8 0.6 0.4 1 active die 0.2 0.0 0 25 VDS Drain-Source Voltage (V) 100 80 25X25X1.6mm FR4 Single 1oz Cu One active die Tamb=25C D=0.5 60 40 Single Pulse D=0.2 D=0.05 D=0.1 20 0 100 1m 10m 100m 1 10 75 100 125 150 Derating Curve Maximum Power (W) 120 50 Temperature (C) Safe Operating Area Thermal Resistance (C/W) ADVANCE INFORMATION Thermal Characteristics 100 1k 25X25X1.6mm FR4 Single 1oz Cu One active die Single Pulse Tamb=25C 100 10 1 100 1m Pulse Width (s) 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 4 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 ADVANCE INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Static Characteristics Symbol Min Typ Max Unit Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V -- -- 1 -- -- 2 Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current while Over Temperature Active -- Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Notes 5 & 9) ID Continuous Drain Current (Notes 5 & 8) Current Limit (Note 11) ID(LIM) 0.7 1 1.5 -- 60 100 -- 120 200 -- -- 300 -- 170 250 -- 150 200 1.4 -- -- 1.6 -- -- 1.7 -- -- 1.8 -- -- 2.2 5 -- 3.3 7 -- A V A A m Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = +25C A VIN = 5V; TA = +25C VIN = 3V; TA = +25C VIN = 5V; TA = +25C A VIN = +3V VIN = +5V Dynamic Characteristics Turn On Delay Time td(on) -- 6 -- s tr -- 14 -- s td(off) -- 34 -- s ff -- 19 -- s TJT 150 175 -- C -- ff -- 10 -- C -- Rise Time Turn Off Delay Time Fall Time VDD = 12V, ID = 1A, VGS = 5V Over-Temperature Protection Thermal Overload Trip Temperature (Note 12) Thermal Hysteresis (Note 12) Notes: 11. The drain current is restricted only when the device is in saturation (see graph `typical output characteristic'). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 12. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as "outside" normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 5 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 4.5V 5V 120 TA = 25C IIN Input Current (A) ID Drain Current (A) 9 8 7 6 5 4 3 2 1 0 4V 3.5V 3V 2.5V 2V VIN 1.5V 0 1 2 3 4 5 6 7 100 80 60 40 20 0 0 8 9 10 11 12 1 3 4 5 Input Current vs Input Voltage Typical Output Characteristic 1.4 ID = 1A 0.4 TJ = 150C 0.2 TJ = 25C 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance () 2 VIN Input Voltage (V) VDS Drain-Source Voltage (V) VIN = VDS ID = 1mA 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (C) VIN Input Voltage (V) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 0.40 10 0.35 0.30 VIN = 3V 0.25 0.20 0.15 VIN = 5V 0.10 0.05 0.00 -75 -50 -25 0 25 50 75 100 125 150 IS Source Curent (A) RDS(on) On-Resistance () ADVANCE INFORMATION Typical Characteristics TJ=150C 1 TJ=25C 0.1 0.01 TJ Junction Temperature (C) On-Resistance vs Temperature 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Reverse Diode Characteristic IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 6 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 Drain-Source Voltage (V) Drain-Source Voltage (V) 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=1A VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (s) Time (s) Switching Speed Switching Speed ID Drain Current (A) ADVANCE INFORMATION Typical Characteristics (cont.) VIN = 5V VDS = 15V RD = 0 8 6 4 2 0 0 5 10 15 Time (ms) Typical Short Circuit Protection IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 7 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A1 A SM-8 Dim Min Max Typ A -1.70 1.60 A1 0.02 0.10 0.04 b 0.70 0.90 0.80 c 0.24 0.32 0.28 D 6.30 6.70 6.60 e 1.53 REF e1 4.59 REF E 6.70 7.30 7.00 E1 3.30 3.70 3.50 L 0.75 1.00 0.90 O --45 O1 -15 -O2 --10 All Dimensions in mm Seating Plane D e1 L o E E1 o1 e b c o2 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions C C1 X Y Y1 Y C1 Y1 X Value (in mm) 1.52 4.60 0.95 2.80 6.80 C IntelliFET(R) is a registered trademark of Diodes Incorporated. ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 8 of 9 www.diodes.com July 2014 (c) Diodes Incorporated ZXMS6005DT8 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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ZXMS6005DT8 Document number: DS32248 Rev. 4 - 2 9 of 9 www.diodes.com July 2014 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: ZXMS6005DT8TA