ZXMS6005DT8TA - Diodes Incorporated

ZXMS6005DT8

ADVANCE INFORMATION

60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

INTELLIFET® MOSFET

Product Summa r y

• Continuos Drain Source Voltage 60V

• On-State Resistance 200mΩ

• Nominal Load Current (VIN = 5 V) 1.8A

• Clamping Energy 210mJ

Description

The ZXMS6005DT8 is a dual

self protected low side MOSFET with

logic level input. It integrates over-temperature, over-

current,

over-

voltage (active clamp) and ESD protected logic level

functionali ty. The ZXMS6005DT8

is ideal as a general purpos e switch

driven from 3.3V or 5V microcontrollers in harsh environments where

standard MOSFETs are not rugged enough.

Applications

• Lamp Driver

• Motor Driver

• Relay Driver

• Solenoid Driver

Features and Benefits

• Compact Dual Package

• Low Input Current

• Logic Level Input (3.3V and 5V)

• Short Circuit Prot ection with A uto Restart

• Over Voltage Protecti on (active clam p)

• Thermal Shutdown with Auto Restart

• Over-Current Protection

• Input Protection (ESD)

• High Continuous Current Rating

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• AEC-Q101-00 6 S h o rt Circuit Reliability Characterized

• PP AP Capable (Note 4)

Mechanical Data

• Case: SM-8

• Case Material: Molded Plast ic, “Green” Molding Com pound

UL Flammabilit y Classification Rating 94V-0

• Moisture Sensitivi t y: Level 1 per J-STD-020

• Terminals: Matte Ti n Finish

• Weight: 0.117 grams (approxim ate)

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantit y per reel

ZXMS6005DT8TA

ZXMS6005D

7

12

1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead -free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the sam e, e xcept whe re spe c ifi e d. F or mo re info rm ati o n, pl ea se ref er to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

SM-8

Top View

Pin-Out

ZXMS6005D = Product Type Marking Code

Device Symbol

Top View

IN1

S1

S2

IN2

D1

D2

1

D2

S2

IN2

D1

S1

IN1

ZXMS

6005D

Pin 1

Green

e3

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 1 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Functional Bloc k Diagram

Application Information

• Two completely isol ated independent c hannels

• Especiall y suited f or loads with a high in-rush current such as lamps and motors

• All types of resisti ve, inducti ve and capacit i ve loads in switching applicat i ons

• μC compatible power switch for 12V DC applications

• Automotive rated

• Replaces electromechanical relays and discrete circuits

• Linear Mode Capability - the current-lim iti ng prot ection circuitry is designed to de-activate at l ow VDS to minimise on state power dissipation.

The maximum DC operating current is therefore det ermined by t he thermal capabi lit y of the package/ board combi nation, rather than by the

protecti on circuitry. T his does not compromis e the product’s abi lit y to self-protect at low VDS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Continuous Drain-S ource Voltage

VDS

60

V

Drain-Source Voltage For Short Circuit Protection

VDS(SC)

24

V

Continuous Input Voltage V

IN

-0.5 to +6 V

Continuous Input Current @ -0.2V ≤ VIN ≤ 6V

Continuous Input Current @VIN < -0.2V or VIN > 6V

IIN No limit

│IIN │≤2 mA

Pulsed Drain Current @VIN = 3.3V ( Note 7)

IDM

5 A

Pulsed Drain Current @VIN = 5V ( Note 7)

IDM

6

A

Continuous Sourc e Current (Body Diode) (Note 5)

IS

2.5

A

Pulsed Source Current (Body Di ode)

ISM

10

A

Unclamped Single Pulse Inductive Energy,

T

J

= +25°C, I

D

= 0.5A, V

DD

= 24V EAS 210 mJ

Electrostatic Discharge (Human Body Model) V

ESD

4000 V

Charged Device Model

VCDM

1000

V

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 2 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Thermal Characteristics (@TA = +25°C, unless otherwise specifi ed.)

Characteristic

Symbol

Value

Units

Power Dissipation at TA = +25°C (Notes 5 & 8)

Linear Derating Factor

PD 1.16

9.28

W

mW/

°

C

Power Dissipation at TA = +25°C (Notes 5 & 9)

Linear Derating Factor PD 1.67

13.3 W

mW/°C

Power Dissipation at TA = +25°C (Notes 6 & 8)

Linear Derating Factor

PD

2.13

17

W

mW/

°

C

Thermal Resistance, Junction to Ambient ( Notes 5 & 8 )

RθJA

108 °

C/W

Thermal Resistanc e, Junction to Ambient (Not es 5 & 9)

RθJA

75 °

C/W

Thermal Resistanc e, Junction to Case (Notes 6 & 8)

RθJC

58.7

°

C/W

Thermal Resistanc e, Juncti on to Case (Note 10)

RθJC

26.5

°

C/W

Operating Temperature Range

TJ

-40 to +150

°

C

Storage Temperature Range TSTG -55 to +150 °C

Notes: 5. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air

conditions.

6. For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec.

7. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient

thermal impedance graph.

8. For a dual device with one act iv e di e.

9. For a dual devi c e wit h 2 acti ve die runni ng at eq ual po w er.

10. Thermal resistance from junction to the mounting surface of the drain pin.

Recommended Operating Conditions

The ZXMS6005DT8 is optimized for us e with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

V

IN

0

5.5

V

Ambient Temperature Range

TA

-40

+125

°C

High Level Input Voltage for MOSFET to be on

VIH

3 5.5 V

Low Level Input Voltage for MOSFET to be off

VIL

0 0.7 V

Peripheral Supply Voltage (voltage to which load is referred)

VP

0

24

V

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 3 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Thermal Characteristics

110

10m

100m

1

10

25X25X 1.6mm FR4

Single 1oz Cu

One active die

Limited by Ov er-Current Protection

Single Pulse

Tamb=25°C

Limited

by R

DS(on)

1ms

10ms

100ms

1s

DC

Safe O perating A rea

I

D

Drain Current (A)

V

DS

Drain-Source Voltage (V)

Limit of s/c protection

025 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1 active die

Derating Curve

Tem perature (°C)

M ax Pow er Dissipation (W )

2 active die

100µ 1m 10m 100m 110 100 1k

0

20

40

60

80

100

120

25X25X 1.6mm FR4

Single 1oz Cu

One active die

T

amb

=25°C

Transient Therm al Im ped ance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W )

Pulse Width (s) 100µ 1m 10m 100m 110 100 1k

1

10

100

25X25X 1.6mm FR4

Single 1oz Cu

One active die

Single Pulse

T

amb

=25°C

Pu lse Power Dissipation

Pulse Width (s)

M aximum P ower (W )

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 4 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Static Characteri stics

Drain-Source Cl am p Voltage

VDS(AZ)

60 65 70 V

ID = 10mA

Off Stat e Drai n Current IDSS — — 1 µA

VDS = 12V, VIN = 0 V

—

2

VDS = 36V, VIN = 0 V

Input Threshold Voltage

VIN(th)

0.7

1

1.5

V

VDS = VGS, ID = 1mA

Input Current IIN — 60 100 µA VIN = +3V

— 120 200 V

IN

= +5V

Input Current while Over Temperature Active — — — 300 µA V

IN

= +5V

Static Drain-Source On-State Res i sta nce RDS(on) — 170 250 mΩ V

IN

= +3V , I

D

= 1A

—

150

200

VIN = +5V , ID = 1A

Continuous Drain Current (Notes 5 & 9) ID

1.4 — —

A

VIN = 3V ; TA = +25

°

C

1.6 — —

VIN = 5V ; TA = +25

°

C

Continuous Drai n Current (Notes 5 & 8)

1.7

—

VIN = 3V ; TA = +25

°

C

1.8

—

VIN = 5V ; TA = +25

°

C

Current Limit (Note 11) ID(LIM)

2.2

5

—

A

VIN = +3V

3.3

7

—

VIN = +5V

Dynamic Characteristi cs

Turn On Delay Time td(on) — 6 — µs

VDD = 1 2V, ID = 1A, VGS = 5V

Rise Time t

r

— 14 — µs

Turn Off Delay Time t

d(off)

— 34 — µs

Fall Time

ff

—

19

—

µs

Over-Temperature Protection

Thermal Overload Trip Temperature (Note 12)

TJT

150

175

—

°

C

—

Thermal Hysteresis (Not e 12)

ff

— 10 — °

C

—

Notes: 11. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be use d i n the

fully on state without interference from the current limit. The device is full y prot ect ed at al l drai n cu rr ent s, as the low pow er diss i pation ge ne rat ed

outside saturation makes current limit unnecessary.

12. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal

operating range, so this part is not designed to withstand over-temperat ur e for extended periods.

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 5 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Typical Characteristics

0 1 2 3 4 5 6 7 8 9 10 11 12

0

1

2

3

4

5

6

7

8

9

-75 -50 -25 025 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.0

0.2

0.4

-75 -50 -25 025 50 75 100 125 150

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

012345

0

20

40

60

80

100

120

0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

2V

4V

5V 4.5V

3.5V 3V2.5V

1.5V

Typical O utpu t Ch aracteristic

T

A

= 25°C

V

IN

ID Drain Current (A)

VDS Drain-Source Voltage (V)

Threshold Voltage vs Tem perature

V

IN

= V

DS

I

D

= 1mA

VTH Threshold Voltage (V)

TJ Jun ction Tem peratu re (°C)

T

J

= 150°C

O n-Resistance vs Inp ut Vo ltage

T

J

= 25°C

RDS(on) On-Resistance (Ω)

VIN Inpu t Voltage (V)

I

D

= 1A

R everse Diod e Ch aracteristic

V

IN

= 3V

V

IN

= 5V

O n-Resistance vs Tem p erature

TJ Jun ction Tem peratu re (°C)

RDS(on) On-Resistance (Ω)

Input Current vs Input Voltage

IIN Input Current (µA)

VIN Inpu t Voltage (V)

VSD Sou rce-Drain Voltage (V)

I S Source Curent (A )

T

J

=25°C

T

J

=150°C

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 6 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Typical Characteristics (cont.)

-50 050 100 150 200 250 300

0

2

4

6

8

10

12

-50 050 100 150 200 250 300

0

2

4

6

8

10

12

0 5 10 15

0

2

4

6

8

Switching Speed

VIN

Drain-S ource Voltage (V)

Time (µ

s)

VDS

ID=1A VDS

VIN

Switching Speed

Drain-S ource Voltage (V)

Time (µ

s)

ID=1A

Typical Short Circuit Protection

VIN = 5V

VDS = 15V

RD = 0Ω

ID Drain Current (A)

Time (ms)

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 7 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

Package Ou t lin e Dim en sio ns

Please see AP02002 at http://www.diodes.c om/ dat asheets / ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for t he latest version.

SM-8

Dim

Min

Max

Typ

A

--

1.70

1.60

A1

0.02

0.10

0.04

b

0.70

0.90

0.80

c

0.24

0.32

0.28

D

6.30

6.70

6.60

e

1.53 REF

e1

4.59 REF

E

6.70

7.30

7.00

E1

3.30

3.70

3.50

L

0.75

1.00

0.90

Ø

--

45°

Ø1

--

15°

--

Ø2

--

10°

All Dimensions in mm

Dimensions

Value (in mm)

C

1.52

C1

4.60

X

0.95

Y

2.80

Y1

6.80

b

D

E1

E

A

e

e1

A1

L

c

ø1

ø

ø2

Seating Plane

Y1

XC

Y

C1

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 8 of 9

www.diodes.com July 2014

ZXMS6005DT8

ADVANCE INFORMATION

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTIO N).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark ri ghts, nor the rights of others. Any Customer or user of this document or products described herein in such applicat ions shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harml ess against all damages.

Diodes Incorporated does not warrant or acc ept any li ability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirect l y, any claim of personal injury or death associat ed with such unintended or unauthori zed appli cat i on.

Products desc ribed herein may be covered by one or more United St ates, international or foreign patents pending. Product names and m arkings

noted herein may also be covered by one or more United States, international or f orei gn trademarks.

This document is written i n English but may be translated int o multiple languages for reference. Only the English version of t his document is the

final and determinative f orm at released by Diodes I ncorporat ed.

LIFE SU PPORT

Diodes Incorporated products are specificall y not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in signifi cant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affec t its safety or effectiveness.

Customers repres ent that they have all necessary expertise i n the safety and regulatory ramif ications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safet y-related requirem ents concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.

www.diodes.com

IntelliFET® is a registered trademark of Diodes Incorporated.

ZXMS6005DT8

Document number: DS32248 Rev. 4 - 2 9 of 9

www.diodes.com July 2014

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Diodes Incorporated:

ZXMS6005DT8TA