Data sheet MMIC DPDT Reflective Switch, DC - 6GHz The P35-4245-000-200 is a high performance Gallium Arsenide double pole double throw broadband RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented at the isolated output of the switch. The switch is controlled by the application of complimentary 0V/-5V or 0/-8V signals to the control lines in accordance with the truth table below. Features * Broadband performance * Low insertion loss; 0.5dB typ at 2GHz * Ultra low DC power consumption * Fast switching speed; 3ns typical This die is fabricated using Bookham Technology's 0.5 m gate length MESFET process (S20) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. www.bookham.com Thinking RF solutions P35-4245-000-200 Electrical Performance Ambient temperature = 22 3 C , Zo = 50 ohms, Control voltages = 0V/-5V unless otherwise stated Parameter Insertion Loss 1 Isolation 2 Input Return Loss 3 Output Return Loss 3 1dB power compression point Switching Speed Conditions DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz DC - 3GHz 3 - 6GHz 4 0/-5V Control; 50MHz 0/-5V Control; 0.5 - 4GHz 0/-8V Control; 50MHz 0/-8V Control; 0.5 - 4GHz 50% Control to 10%90%RF Min 40 30 20 15 20 12 - Typ 0.5 0.8 45 35 25 18 22 14 19.5 25.5 21.5 28 3 Max 0.6 0.9 - Units dB dB dB dB dB dB dB dB dBm dBm dBm dBm ns Notes 1. 2. 3. 4. Insertion loss refers to each pole of the switch. Isolation measured between RF IN & RF OUT (2 poles). Return Loss measured in low loss switch state. Input power at which insertion loss compresses by 1dB. Typical Performance at 22 C Insertion Loss Isolation Input Return Loss Output Return Loss Absolute Maximum Ratings Max control voltage Max I/P power Operating temperature Storage temperature www.bookham.com -8V +30 dBm -60 C to +125 C -65 C to +150 C Thinking RF solutions P35-4245-000-200 Chip Outline MMICS Die size: Minimum Bond pad size: Die thickness: 0.99 x 0.64mm 90 m x 90 m 200 m Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ UK * Tel: +44 (0) 1327 356 789 * Fax: +44 (0) 1327 356 698 Electrical Schematic rfsales@bookham.com Important Notice Bookham Technology has a policy of continuous improvement. As a result certain parameters detailed on this flyer may be subject to change without notice. If you are interested in a particular product please request the product specification sheet, available from any RF sales representative. Switching Schematic Switching Truth Table A B 0V -5V -5V 0V RF IN-RF1 RF3-RF OUT Low Loss Isolated RF IN-RF2 RF4-RF OUT Isolated Low Loss Handling, Mounting and Bonding The back of the die is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The maximum allowable die temperature is 310 C for 2 minutes. Bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the die face at 225 C to 275 C with a heated thermosonic wedge (approx. 125 C) and a maximum force of 60 grams. Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Note that there is a choice of control pads (A & B) to aid circuit layout. Ordering Information P35-4245-000-200 www.bookham.com 462/SM/00026/200 Issue 1/2 (c) Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc