Data
sheet
www.bookham.com Thinking RF solutions
MMIC DPDT Reflective
Switch, DC - 6GHz
The P35-4245-000-200 is a high performance Gallium
Arsenide double pole double throw broadband RF switch
MMIC. It is suitable for use in broadband communications
and instrumentation applications. A short circuit reflective
termination is presented at the isolated output of the switch.
The switch is controlled by the application of complimentary
0V/-5V or 0/-8V signals to the control lines in accordance
with the truth table below.
This die is fabricated using Bookham Technology’s 0.5 µm
gate length MESFET process (S20) and is fully protected
using Silicon Nitride passivation for excellent performance
and reliability.
Features
•Broadband performance
•Low insertion loss; 0.5dB typ
at 2GHz
•Ultra low DC power consumption
•Fast switching speed; 3ns typical
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Electrical Performance
Ambient temperature = 22 ± 3 °C , Zo = 50 ohms, Control voltages = 0V/-5V unless otherwise stated
P35-4245-000-200
Parameter Conditions Min Typ Max Units
Insertion Loss 1DC - 3GHz - 0.5 0.6 dB
3 - 6GHz - 0.8 0.9 dB
Isolation 2DC - 3GHz 40 45 - dB
3 - 6GHz 30 35 - dB
Input Return Loss 3DC - 3GHz 20 25 - dB
3 - 6GHz 15 18 - dB
Output Return Loss 3DC - 3GHz 20 22 - dB
3 - 6GHz 12 14 - dB
1dB power compression point 4 0/-5V Control; 50MHz - 19.5 - dBm
0/-5V Control; 0.5 - 4GHz - 25.5 - dBm
0/-8V Control; 50MHz - 21.5 - dBm
0/-8V Control; 0.5 - 4GHz - 28 - dBm
Switching Speed 50% Control to 10%90%RF - 3 - ns
Notes
1. Insertion loss refers to each pole of the switch.
2. Isolation measured between RF IN & RF OUT (2 poles).
3. Return Loss measured in low loss switch state.
4. Input power at which insertion loss compresses by 1dB.
Typical Performance at 22° C
Insertion Loss Isolation
Input Return Loss Output Return Loss
Absolute Maximum Ratings
Max control voltage -8V
Max I/P power +30 dBm
Operating temperature -60 °C to +125 °C
Storage temperature -65 °C to +150 °C
Chip Outline
Electrical Schematic
Switching Schematic
Switching Truth Table
Handling, Mounting and Bonding
The back of the die is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with low
temperature conductive epoxy. The maximum allowable die temperature is 310 °C for 2 minutes. Bonds should be made
onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the die
face at 225 °C to 275 °C with a heated thermosonic wedge (approx. 125 °C) and a maximum force of 60 grams. Ball bonds
may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the
bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Note that
there is a choice of control pads (A & B) to aid circuit layout.
Ordering Information
P35-4245-000-200
www.bookham.com 462/SM/00026/200 Issue 1/2
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
• Tel: +44 (0) 1327 356 789
• Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4245-000-200
Die size: 0.99 x 0.64mm
Minimum Bond pad size: 90 µm x 90 µm
Die thickness: 200 µm
A B RF IN-RF1 RF IN-RF2
RF3-RF OUT RF4-RF OUT
0V -5V Low Loss Isolated
-5V 0V Isolated Low Loss
