DATA SHEET SILICON POWER MOS FET NE5520379A UE D 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V supply voltage. O NT IN FEATURES * High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) * High power added efficiency : add = 65% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : add = 35% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) * High linear gain : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm) : GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm) * Surface mount package : 5.7 5.7 1.1 mm MAX. * Single supply : VDS = 2.8 to 6.0 V APPLICATIONS * Digital cellular phones : 3.2 V GSM/DCS Dual-Band handsets * Others : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications ORDERING INFORMATION Package Marking SC Part Number NE5520379A-T1 79A A3 NE5520379A-T1A Supplying Form * 12 mm wide embossed taping * Gate pin face the perforation side of the tape * Qty 1 kpcs/reel * 12 mm wide embossed taping * Gate pin face the perforation side of the tape * Qty 5 kpcs/reel DI Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5520379A-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10122EJ03V0DS (3rd edition) Date Published July 2003 CP(K) The mark shows major revised points. NE5520379A Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15.0 V Gate to Source Voltage VGS 5.0 V Drain Current ID 1.5 A Drain Current (Pulse Test) Note 3.0 A ID Ptot 20 W Channel Temperature Tch 125 C Storage Temperature Tstg 65 to +125 Note Duty Cycle 50%, Ton 1 s RECOMMENDED OPERATING CONDITIONS Symbol Test Conditions C MIN. O NT IN Parameter UE Total Power Dissipation D ABSOLUTE MAXIMUM RATINGS (T A = +25C) TYP. MAX. Unit Drain to Source Voltage VDS 2.8 3.2 6.0 V Gate to Source Voltage VGS 0 2.5 3.5 V ID Duty Cycle 50%, Ton 1 s 1.75 2.0 A Input Power Pin f = 1.8 GHz, VDS = 3.6 V 24 25 26 dBm DI SC Drain Current (Pulse Test) 2 Data Sheet PU10122EJ03V0DS NE5520379A ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit IGSS VGS = 6.0 V 100 nA Drain to Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS = 8.5 V 100 nA Gate Threshold Voltage Vth VDS = 3.5 V, ID = 1 mA Transconductance Gm VDS = 3.5 V, ID = 0.8 to 1.0 A IDSS = 10 A 15 Drain to Source Breakdown Voltage BVDSS 1.0 D Gate to Source Leak Current 1.35 2.0 V 2.5 S 20 V 5 C/W 16.0 dB f = 915 MHz, Pin = 25 dBm, 35.5 dBm VDS = 3.2 V, VGS = 2.5 V, Note 68 % 65 % 8.5 dB Rth Channel to Case Linear Gain GL f = 915 MHz, Pin = 10 dBm, UE Thermal Resistance VDS = 3.2 V, VGS = 2.5 V, Note Output Power Pout d Drain Efficiency add Linear Gain GL f = 1 785 MHz, Pin = 10 dBm, O NT IN Power Added Efficiency VDS = 3.2 V, VGS = 2.5 V, Note Output Power Drain Efficiency Power Added Efficiency Pout f = 1 785 MHz, Pin = 25 dBm, 31.0 33.0 dBm d VDS = 3.2 V, VGS = 2.5 V, Note 29 38 % 35 % add Note DC performance is 100% testing. RF performance is testing several samples per wafer. DI SC Wafer rejection criteria for standard devices is 1 reject for several samples. Data Sheet PU10122EJ03V0DS 3 NE5520379A DI SC O NT IN UE D TYPICAL CHARACTERISTICS (T A = +25C) 4 Data Sheet PU10122EJ03V0DS DI SC O NT IN UE D NE5520379A Data Sheet PU10122EJ03V0DS 5 O NT IN UE D NE5520379A DI SC Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10122EJ03V0DS NE5520379A LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, IDset = 600 mA, Pin = 25 dBm) Zin () 1 785 TBD ZOL () Note TBD UE f (MHz) D S-PARAMETERS DI SC O NT IN Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency. Data Sheet PU10122EJ03V0DS 7 NE5520379A PACKAGE DIMENSIONS O NT IN UE D 79A (UNIT: mm) DI SC 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) 8 Data Sheet PU10122EJ03V0DS NE5520379A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method VPS : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215C or below Time at temperature of 200C or higher : 25 to 40 seconds Maximum number of reflow processes : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below WS260 : 10 seconds or less O NT IN Partial Heating VP215 : 30 to 60 seconds Maximum chlorine content of rosin flux (% mass) Time at peak temperature IR260 D Peak temperature (package surface temperature) Preheating time at 120 to 150C Wave Soldering Condition Symbol UE Infrared Reflow Soldering Conditions Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350C or below Soldering time (per pin of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350-P3 DI SC Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10122EJ03V0DS 9