Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10122EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
SILICON POWER MOS FET
NE5520379A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS
DATA SHEET
The mark shows major revised points.
DESCRIPTION
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power
amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a
surface mount package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz
under the 2.8 V supply voltage.
FEATURES
•High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)
: Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)
•High power added efficiency :
add = 65% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm)
:
add = 35% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm)
•High linear gain : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm)
: GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm)
•Surface mount package : 5.7 5.7 1.1 mm MAX.
•Single supply : VDS = 2.8 to 6.0 V
APPLICATIONS
•Digital cellular phones : 3.2 V GSM/DCS Dual-Band handsets
•Others : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5520379A-T1
79A
A3
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
NE5520379A-T1A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520379A-A
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Data Sheet PU10122EJ03V0DS
NE5520379A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15.0
V
Gate to Source Voltage
VGS
5.0
V
Drain Current
ID
1.5
A
Drain Current (Pulse Test)
ID Note
3.0
A
Total Power Dissipation
Ptot
20
W
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
65 to +125
C
Note Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
2.8
3.2
6.0
V
Gate to Source Voltage
VGS
0
2.5
3.5
V
Drain Current (Pulse Test)
ID
Duty Cycle 50%, Ton 1 s
1.75
2.0
A
Input Power
Pin
f = 1.8 GHz, VDS = 3.6 V
24
25
26
dBm
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Data Sheet PU10122EJ03V0DS
3
NE5520379A
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSS
VGS = 6.0 V
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 8.5 V
100
nA
Gate Threshold Voltage
Vth
VDS = 3.5 V, ID = 1 mA
1.0
1.35
2.0
V
Transconductance
Gm
VDS = 3.5 V, ID = 0.8 to 1.0 A
2.5
S
Drain to Source Breakdown Voltage
BVDSS
IDSS = 10
A
15
20
V
Thermal Resistance
Rth
Channel to Case
5
C/W
Linear Gain
GL
f = 915 MHz, Pin = 10 dBm,
VDS = 3.2 V, VGS = 2.5 V, Note
16.0
dB
Output Power
Pout
f = 915 MHz, Pin = 25 dBm,
35.5
dBm
Drain Efficiency
d
VDS = 3.2 V, VGS = 2.5 V, Note
68
%
Power Added Efficiency
add
65
%
Linear Gain
GL
f = 1 785 MHz, Pin = 10 dBm,
VDS = 3.2 V, VGS = 2.5 V, Note
8.5
dB
Output Power
Pout
f = 1 785 MHz, Pin = 25 dBm,
31.0
33.0
dBm
Drain Efficiency
d
VDS = 3.2 V, VGS = 2.5 V, Note
29
38
%
Power Added Efficiency
add
35
%
Note DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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Data Sheet PU10122EJ03V0DS
NE5520379A
TYPICAL CHARACTERISTICS (TA = +25C)
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Data Sheet PU10122EJ03V0DS
5
NE5520379A
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Data Sheet PU10122EJ03V0DS
NE5520379A
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10122EJ03V0DS
7
NE5520379A
S-PARAMETERS
LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, IDset = 600 mA, Pin = 25 dBm)
f (MHz)
Zin ()
ZOL () Note
1 785
TBD
TBD
Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
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Data Sheet PU10122EJ03V0DS
NE5520379A
PACKAGE DIMENSIONS
79A (UNIT: mm)
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
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Data Sheet PU10122EJ03V0DS 9
NE5520379A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature) : 215C or below
Time at temperature of 200C or higher : 25 to 40 seconds
Preheating time at 120 to 150C : 30 to 60 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature) : 350C or below
Soldering time (per pin of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
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