BAR81... Silicon RF Switching Diode * Designed for use in shunt configuration in high performance RF switches * High shunt signal isolation * Low shunt insertion loss * Optimized for short - open transformation using /4 lines * Pb-free (RoHS compliant) package BAR81W " ! Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) 0.15* Marking BBs * series inductance chip to ground Maximum Ratings at T A = 25C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation Ptot 100 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Ts 138C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 120 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 2011-06-14 BAR81... Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - 0.93 1 V DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics pF CT Diode capacitance VR = 1 V, f = 1 MHz - 0.6 1 VR = 3 V, f = 1 MHz - 0.57 0.9 rf - 0.7 1 rr - 80 - ns I-region width WI - 3.5 - m Shunt Insertion loss1) IL - 30 - dB ISO - 0.7 - Forward resistance IF = 5 mA, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 IF = 10 mA, f = 1.89 GHz Shunt isolation1) VR = 3 V, f = 1.89 GHz Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 1For more information please refer to Application Note 049. 2 2011-06-14 BAR81... Diode capacitance CT = (VR) Reverse parallel resistance RP = (VR) f = Parameter f = Parameter 10 4 1 KOhm 100 MHz pF 10 3 Rp CT 0.8 0.7 10 2 1 GHz 1.8 GHz 0.6 1 Mhz ... 1.8 GHz 10 1 0.5 0.4 10 0 0.3 0.2 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = (IF) Forward current IF = (VF) f = 100MHz TA = Parameter 10 1 10 0 A 10 -1 Ohm rf IF 10 -2 10 0 10 -3 -40 C 25 C 85 C 125 C 10 -4 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 3 2011-06-14 BAR81... Forward current IF = (TS ) Permissible Puls Load RthJS = (t p) BAR81W BAR81W 10 3 120 mA K/W 100 RthJS 90 IF 80 70 10 2 60 50 10 40 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 1 30 20 10 0 0 15 30 45 60 90 105 120 C 75 10 0 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tP Permissible Pulse Load IFmax / IFDC = (t p) BAR81W IFmax/IFDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tP 4 2011-06-14 Package SOT343 BAR81... Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 0.6 +0.1 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 5 2011-06-14 BAR81... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-06-14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BAR 81W E6327 BAR 81W H6327