SAMSUNG SEMICONDUCTOR INC Ss WHE Df 29u41M2 coozsas 2 ff KSB772 PNP EPITAXIAL SILICON TRANSISTOR : 1-33-17 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING Complement to KSD882 TO-126 + ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Base Voltage Veso . ~40 Vv Collector-Emitter Voltage Veeco 30 Vv Emitter-Base Voltage Vepo ~5 Vv Collector Current (DC} Io ~3 A *Collector Current (Pulse) lc -7 A Base Current (DC) la 0.6 A Collector Dissipation (T.=25C) Po : 10 WwW Collector Dissipation (Tg=25C) Pe 1 WwW 1. Emitter 2, Collector 3. Base Junction Temperature Ti 150 C Storage Temperature Tstg 55~150 C * PWs10ms, Duty Cycle <50% ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current lego Vca=~30V, le=O -1 pA Emitter Cutoff Current lepo Ves=3V, Ilo=O -1 pA *DC Current Gain res Vee=2V, l= -20mA 30 220 : reo Voe=2V, lo=-1A 60 160 400 * Collector Emitter Saturation Voltage Vce (sat) | Ie=2A, Ilgp=0.2A -0.3 ~0.5 Vv * Base Emitter Saturation Voltage Voc (sat) | Ic=2A, lp=0.2A -1.0 -2.0 Vv Current Gain Bandwidth Product fr Vee=5V, 1e=0.1A 80 MHz Output Capacitance Cob Ves=-10V, le=O 55 pF : f=1MHz * Pulse Test: PW<350us, Duty Cycle<2% hre(2) CLASSIFICATION 4 Classification ; R oO Y G Hee(2) 60-120 ~ 100-200 160-320 200-400 ck SAMSUNG SEMICONDUCTOR 90SAMSUNG SEMICONDUCTOR INC KSB772 x STATIC CHARACTERISTIC t t L{A), COLLECTOR CURRENT J 2 + Vee{Vh COLLECTOR-EMITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE Vex (wat) Vae{eat) (mV), SATURATION L({mA), COLLECTOR CURRENT CURRENT GAIN-BANDWIDTH PRODUCT ' f{MHz}, CURRENT GAIN BANDWIDTH PRODUCT -3~5 -10 1 0.01 -0.03~0.05 -0.1 -0.3-05 -1 K{A}, COLLECTOR CURRENT ave o [Pescunsv2 ooorsie 4 PNP EPITAXIAL SILICON TRANSISTOR T-33-17 DC CURRENT GAIN --10 =50-100 300 Ig (mA), COLLECTOR CURRENT, COLLECTOR OUTPUT CAPACITANCE Cob (pF), CAPACITANCE -3-5 -10 = Veat}, COLLECTOR-BASE VOLTAGE 300-500 - 1000 SAFE OPERATING AREA 1 3-6 10 =30~-80-100 -300-500 -1000 Veet). COLLECTOR-EMITTER VOLTAGE ae SAMSUNG SEMICONDUCTOR 91SAMSUNG SEMICONDUCTOR INC aye o Pf zseyiy2 ooozsi7 s ff KSB772 . PNP EPITAXIAL SILICON TRANSIST OR a 7-33-17 DERATING CURVE OF SAFE OPERATING AREAS POWER DERATING |. (%), 1c DERATING PolW}, POWER DISSIPATION o 150 200 To{*C), CASE TEMPERATURE ee SAMSUNG SEMICONDUCTOR . 92- = = SAMSUNG SEMICONDUCTOR INC | LYE D BP 2cb4L42 0000518 a I "os = BNP EPITAXIAL SILICON ~ KSB794 . | DARLINGTON TRANSISTOR 7233-3) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE TO-126 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Base Voltage Vceo -60 Vv Collector-Emitier Voltage Vceo 60 Vv Emitter-Base Voltage Vezo 8 Vv Collector Current (DC) le #1.6 A *Collector Current (Pulse). Ic +3 A Base Current (DC) la 6.15 A Collector Dissipation (Ta=25C) | Pe ~ 1 Ww 1. Emitter 2. Collector 3. Base Collector Dissipation (T.=26C) | Pc 10 Ww. Junction Temperature . Tj 150 C Storage Temperature Tstg -55~150 C * PW300ups, Duty Cycle <10% ELECTRICAL CHARACTERISTICS (T, =25C) Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current keso Ven=60V, =O - -10 pA Collector Cutoff Current leer Vee==60V, Roe=510, T.2125C =1 mA Collector Cutoff Current foext Mce=60V, Vez (off)=1.5V ~10 pA Collector Cutoff Current Icex2 Voe=60V, Voc (off)=1.5V : -1 mA Ta=T25C | Emitter Cutoff Current tep0 Vea=5V, lb=0 . . -1 mA *DC Current Gain Dees Vce= 2V, bb =-0.5A 1000 . . Neee . Vce=-2V, lb=-1A 2000 | 30000 -.*Collector-Emitter Saturation Voltage Vee (sat) c=-1A, h=1MA , ~-1.5 V- *Base-Emitter Saturation Voltage Veg (sat)-.| b= 1A, fg=1MA . ~2 Vv Pulse Test: PW<350ps; Duty Cycles 2% pulsed. hre(2) CLASSIFICATION Ciassification R oO Y Nre(2) 2000-5000 4000-10000 8000-30000 Ri510k2 R,25000 rH SAMSUNG SEMICONDUCTOR | 93clue o ff 2ae4i42 ooo7sia t ff - . PNP EPITAXIAL SILICON. KSB794 DARLINGTON TRANSISTOR T-33-3) STATIC CHARACTERISTIC . DC CURRENT GAIN SAMSUNG SEMICONDUCTOR INC a bee, DC CURRENT GAIN IfA}, COLLECTOR CURRENT I 2 oo a 1.0 2.0 ~3.0 4.0 -50 0.01 -0.03 O.1 1 - - VestV}, COLLECTOR-EMITTER VOLTAGE kia), COLLECTOR CURRENT SATURATION VOLT, DERATING CURVE OF SAFE OPERATING AREAS SA VOL 180 T(%), Ic DERATING & 40 Veelsat), Vac(eatX), SATURATION VOLTAGE \ ' 20 0. ~0.04 ~0.06-0.1 | 03-05 -1 3-4 bfA), COLLECTOR CURRENT , Te{*C), CASE TEMPERATURE 9 50 100 50 200 SAFE OPERATING AREA POWER DERATING Po(W), POWER [XSSIPATION {A}, COLLECTOR CURRENT a 8 9G 50 100 150 200 -3 =10 -50 T-{*C), CASE TEMPERATURE . Veet}, COLLECOTR-EMITTER VOLTAGE rH SAMSUNG SEMICONDUCTOR 94pte rtremtsenal pit te Veep me cin tet SAMSUNG SEMICONDUCTOR KSB795 AUDIO FREQUENCY POWER INC LOW SPEED SWITCHING INDUSTRIAL USE LYE D WE O fF ?7U4L42 GOO7S20 & PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit Collector-Base Voltage Veo 80 Vv Callector-Emitter Voltage Vcro -80 Vv Emitter-Base Voltage Veno -8 Vv Collector Current (DC) Io #1.5 A *Collector Current (Pulse) le 1 3 A Base Current (DC) ; Ip -0.15 A Collector Dissipation (T,=25C) Pe 1 Ww Collector Dissipation (T-=25C) | P. 10 Ww Junction Temperature Tj 150 C Storage Temperature Tstg FP 55~150 mae * PW<300ys, Duty Cycle <10% ELECTRICAL CHARACTERISTICS (Tz =25C) 7233-3) 70-126 1, Emitter 2. Collector Base Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current lepo Vos=80V, IrE=O -10 pA Collector Cutoff Current leer Vee=80V, Rac=51N, T2=125C -1 mA Collector Cutoff Current loex 1 Voe= 80V, Vee (offf=1.5V ~-10 pA Collector Cutoff Current leex2 Vce= 80V, Var (off}=1.5V 1 mA Ta=125C Emitter Cutoff Current leo Vep=5V, k=O -1 mA *DC Current Gain rer Vee=2V, Io=-0.5A 1000 . Dree Vce=-2V, lo= 1A 2000 | 30000 *Collector-Emitter Saturation Voltage Vee {sat) ic=1A, l= -1mMA ~-1.5 Vv *Base-Emitter Saturation Voltage Ver (sat) | lk=1A, b=1mA -2 Vv *Pulse Test: PW<350ps, Duty Cycles2% pulsed. ~ c 9 hre(2) CLASSIFICATION Classification R Oo Y Hee(2) 2000-5000 4000-10000 . 8000-30000 Ay ANY R, Rz 9 E R,y=10kQ R,=5000" abe SAMSUNG SEMICONDUCTOR 95{A}, COLLECTOR CURRENT t 2 Vesteatt, VaelsatXV}, SATURATION VOLTAGE SAMSUNG SEMICONDUCTOR INC- vue o PP zaeua42 coovsar a &f KSB795 : - PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR , | T233 -3) STATIC CHARACTERISTIC . OC CURRENT GAIN hep, OC CURRENT GAIN = =2 =3 =4 -0.01 -0.03 0.1 1 Vee{), COLLECTOR-EMITTEA VOLTAGE I{A} COLLECT OA CURRENT BASE-EMITTER SATURATION VOLTAGE DERATING CURVE OF SAFE OPERATING AREAS SATURATION VOLTAGE 160 140 120 1(%), le DERATING & 0.04 -0.06-0.1 |. -03 -05 -1 -3-4 o + $0 100 150 200 If), COLLECTOR CURRENT : . _ TeX*C), CASE. TEMPERATURE POWER DERATING SAFE OPERATING AREA Po(W), POWER DISSIPATION | LA}, COLLECTOR CURRENT 1 2 ~0.01 so 100 180 * 200 1 -3 -5 =10 -320 =0 =100 Tol*C}, CASE TEMPERATURE =| Vee{V), COLLECTOR-EMITTER VOLTAGE be SAMSUNG SEMICONDUCTOR 96