BF422 Semiconductor NPN Silicon Transistor Descriptions * High voltage application * Monitor equipment application Features * Collector-Emitter voltage : VCEO=250V * Complementary pair with BF423 Ordering Information Type NO. Marking Package Code BF422 TO-92 BF422 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 0.40.02 2.060.1 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Collector 3. Base 0.38 1.200.1 1 2 3 KST-9065-000 1 BF422 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 250 V Collector-Emitter voltage VCEO 250 V Emitter-base VEBO 5 V Collector current IC 100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C Electrical Characteristics Characteristic Symbol Collector-Emitter breakdown voltage BVCEO Test Condition IC=1mA, IB=0 Min. Typ. Max. Unit 250 - - V Collector cut-off current ICBO VCB=200V, IE=0 - - 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA DC current gain hFE VCE=20V, IC=25mA 50 - - - VCE(sat) IC=30mA, IB=5mA - - 0.6 V fT VCE=20V, IC=10mA, f=100MHz - 100 - MHz VCB=20V, IE=0, f=1MHz - 1 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance Cob KST-9065-000 2