KST-9065-000 1
BF422
NPN Silicon Transistor
Descriptions
• High voltage application
•
••
• Monitor equipment application
Features
• Collector-Emi tter v oltage : VCEO=250V
• Complementary pair with BF423
Ordering Information
Type NO. Marking Package Code
BF422 BF422 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Collector
3. Bas e
KST-9065-000 2
BF422
Absolute maximum ratings
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 250 V
Collector-Emitter voltage VCEO 250 V
Emitter-base VEBO 5V
Collector current IC100 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=1mA, IB=0 250 - - V
Collector cut-off current ICBO VCB=200V, IE=0 - - 100 nA
Emitter c ut-off c urrent IEBO VEB=5V, IC=0 - - 100 nA
DC current gain hFE VCE=20V, IC=25mA 50 - - -
Collec tor -Emitter s a turation voltage VCE(sat) IC=30mA, IB=5mA - - 0.6 V
Tran sistor frequency fTVCE=20V, IC=10mA,
f=100MHz - 100 - MHz
Collec tor output capac itance Cob VCB=20V, IE=0, f=1MHz -1 -pF
