
MC74HCT04A
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3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
Value
Unit
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Current, per Pin
±20
mA
Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Output Current, per Pin
±25
mA
ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Current, VCC and GND Pins
±50
mA
ÎÎ
PD
ÎÎÎÎÎÎÎÎÎÎÎÎ
Power Dissipation in Still Air Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎ
750
500
450
Î
mW
Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Temperature Range
– 65 to + 150
_C
ÎÎ
TL
ÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
ÎÎÎ
260
Î
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
Min
Max
Unit
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating Temperature Range, All Package Types
– 55
+ 125
_C
tr, tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Input Rise/Fall Time (Figure 1)
0
500
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
V
Guaranteed Limit
Symbol Parameter Condition −55 to 25°C≤85°C≤125°C Unit
VIH Minimum High−Level Input Voltage Vout = 0.1V
|Iout| ≤ 20mA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL Maximum Low−Level Input Voltage Vout = VCC − 0.1V
|Iout| ≤ 20mA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH Minimum High−Level Output
Voltage
Vin = VIL
|Iout| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIL |Iout| ≤ 4.0mA 4.5 3.98 3.84 3.70
VOL Maximum Low−Level Output
Voltage
Vin = VIH
|Iout| ≤ 20mA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH |Iout| ≤ 4.0mA 4.5 0.26 0.33 0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 5.5 ±0.1 ±1.0 ±1.0 mA
ICC Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0mA
5.5 1 10 40 mA
DICC Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0mA5.5
≥ −55°C25 to 125°C
mA
2.9 2.4
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + ΣDICC.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.