STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features * Designed for soft commutation only TAB * Maximum junction temperature: TJ = 175 C * Minimized tail current 2 * VCE(sat) = 2.0 V (typ.) @ IC = 25 A 3 3 1 2 1 * Tight parameters distribution * Safe paralleling * Low VF soft recovery co-packaged diode TO-247 TO-3P * Low thermal resistance * Lead free package Applications Figure 1. Internal schematic diagram * Induction heating * Microwave oven C (2, TAB) * Resonant converters Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW28IH125DF G28IH125DF TO-247 Tube STGWT28IH125DF G28IH125DF TO-3P Tube February 2014 This is information on a product in full production. DocID025268 Rev 2 1/17 www.st.com 17 Contents STGW28IH125DF, STGWT28IH125DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID025268 Rev 2 STGW28IH125DF, STGWT28IH125DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1250 V IC Continuous collector current at TC = 25 C 60 A IC Continuous collector current at TC = 100 C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 60 A IF Continuous forward current at TC = 100 C 30 A IFP(1) Pulsed forward current 120 A PTOT Total dissipation at TC = 25 C 375 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.4 C/W RthJC Thermal resistance junction-case diode 1.47 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID025268 Rev 2 3/17 Electrical characteristics 2 STGW28IH125DF, STGWT28IH125DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Max. 1250 VGE = 15 V, IC = 25 A VCE(sat) Typ. V 2 VGE = 15 V, IC = 25 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 25 A TJ = 175 C Unit 2.5 2.2 V 2.3 VGE = 15 V, IC = 50 A 2.65 IF = 25 A 1.2 IF = 50 A 1.45 IF = 25 A TJ = 125 C 1.2 IF = 25 A TJ = 175 C 1.2 1.6 Forward on-voltage V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 1250 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 960 V, IC = 25 A, VGE = 15 V, see Figure 25 Qge Gate-emitter charge Qgc Gate-collector charge DocID025268 Rev 2 Min. Typ. Max. Unit - 2035 - pF - 139 - pF - 52 - pF - 114 - nC - 11 - nC - 69 - nC STGW28IH125DF, STGWT28IH125DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 600 V, IC = 25 A, RG = 10 , VGE = 15 V, see Figure 23 VCE = 600 V, IC = 25 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 23 Min. Typ. Max. Unit - 128 - ns - 82 - ns - 0.72 - mJ - 132 - ns - 190 - ns - 1.53 - mJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 900 V, RG = 10 , IC = 50 A, L = 500 H, Csnub = 330 nF, see Figure 24 Eoff(1) Turn-off switching losses VCC = 900 V, RG = 10 , IC = 50 A, L = 500 H, Csnub = 330 nF, TJ = 175 C, see Figure 24 Min. Typ. Max. - 230 J - 520 - 1. Turn-off losses include also the tail of the collector current. DocID025268 Rev 2 5/17 Electrical characteristics 2.1 STGW28IH125DF, STGWT28IH125DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPG300120140946FSR Ptot (W) Figure 3. Collector current vs. case temperature GIPG300120140951FSR IC (A) 60 300 50 40 200 30 20 100 0 0 50 100 150 0 TC(C) Figure 4. Output characteristics (TJ = 25C) GIPG300120140955FSR IC (A) VGE 15V, TJ 175 C 10 VGE 15V, TJ 175 C VGE=15V 13V 100 80 50 0 100 150 TC(C) Figure 5. Output characteristics (TJ = 175C) GIPG300120141005FSR IC (A) VGE=15V 100 13V 80 11V 60 40 11V 60 40 9V 20 9V 20 7V 0 0 2 1 3 4 5 VCE(V) Figure 6. VCE(sat) vs. junction temperature GIPG300120141019FSR VCE(sat) (V) 0 0 IC= 50A VGE= 15V TJ= 25C 2.6 2.6 IC= 25A 2.4 2.4 2.2 2.2 TJ= -40C 2 2 1.8 IC= 12.5A 1.8 1.6 1.4 1.6 6/17 TJ= 175C 2.8 2.8 1.4 -50 VCE(V) GIPG300120141024FSR VCE(sat) (V) 3.0 3 5 4 3 Figure 7. VCE(sat) vs. collector current VGE= 15V 3.2 2 1 0 50 100 150 TJ(C) 1.2 DocID025268 Rev 2 0 10 20 30 40 50 IC(A) STGW28IH125DF, STGWT28IH125DF Electrical characteristics Figure 8. Forward bias safe operating area GIPG300120141043FSR IC (A) Figure 9. Transfer characteristics GIPG300120141054FSR IC (A) VCE=10V 100 TJ=25C 100 1 s 80 10 s 10 60 100 s 1 0.1 1 10 GIPG300120141110FSR VF (V) 0 6 VCE(V) Figure 10. Diode VF vs. forward current TJ= 175C 2.4 TJ=175C 20 1000 100 40 1 ms Single pulse Tc= 25C, TJ<= 175C = 25C, VCGE = 15V T 175 C; V 10 8 12 VGE(V) Figure 11. Normalized VGE(th) vs junction temperature GIPD281020131600FSR VGE(th) (norm) 1.1 IC= 1mA VCE= VGE 2.2 TJ= 25C 2.0 1.0 1.8 0.9 1.6 TJ= -40C 1.4 0.8 1.2 1.0 0.7 0.8 0.6 0 20 40 60 80 100 Figure 12. Normalized V(BR)CES vs. junction temperature GIPG300120141121FSR V(BR)CES (norm) 1.08 0.6 -50 IF(A) 0 50 100 150 TJ(C) Figure 13. Capacitance variation GIPG300120141124FSR C (pF) Cies IC= 2mA 1000 1.0 100 Coes Cres 10 0.9 -50 0 50 100 150 TJ(C) DocID025268 Rev 2 1 0.1 1 10 100 VCE(V) 7/17 Electrical characteristics STGW28IH125DF, STGWT28IH125DF Figure 14. Gate charge vs. gate-emitter voltage GIPG300120141130FSR VGE (V) EOFF (J) 2500 IC= 25A IGE= 1mA VCC= 960V 16 Figure 15. Switching loss vs collector current GIPG300120141133FSR VCC = 600V, VGE = 15V, RG = 10 2000 TJ = 175 C 12 1500 8 TJ = 25 C 1000 4 500 0 0 20 40 60 80 100 120 Figure 16. Switching loss vs gate resistance GIPG300120141141FSR EOFF (J) 2200 VCC = 600 V, VGE = 15 V, IC = 25 A 10 20 30 40 50 IC(A) Figure 17. Switching loss vs temperature EOFF (J) 1600 GIPG300120141158FSR VCC= 600V, VGE= 15V, RG= 10, IC= 25A 1400 2000 1800 0 0 Qg(nC) 1300 TJ = 175 C 1200 1600 1100 1400 1000 1200 1000 900 TJ = 25 C 800 800 600 700 400 0 10 20 30 Figure 18. Switching loss vs collector-emitter voltage EOFF (J) 250 600 10 RG() 40 40 70 100 130 160 TJ(C) Figure 19. Switching times vs. collector current GIPG300120141206FSR VGE= 15V, RG= 10, IC= 25A t (ns) GIPG300120141346FSR TJ= 175C, VGE= 15V, RG= 10, VCC= 600V TJ= 175C 200 tdoff 100 150 tf 100 TJ= 25C 50 0 250 8/17 450 650 850 VCE(V) DocID025268 Rev 2 10 0 10 20 30 40 50 IC(A) STGW28IH125DF, STGWT28IH125DF Electrical characteristics Figure 20. Switching times vs. gate resistance t (ns) GIPG300120141353FSR TJ= 175C, VGE= 15V, IC= 25A, VCC= 600V tdoff tf 100 10 0 10 20 30 40 RG() DocID025268 Rev 2 9/17 Electrical characteristics STGW28IH125DF, STGWT28IH125DF Figure 21. Thermal impedance for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 Figure 22. Thermal impedance for diode 10/17 DocID025268 Rev 2 tp (s) STGW28IH125DF, STGWT28IH125DF 3 Test circuits Test circuits Figure 23. Test circuit for inductive load switching Figure 24. Test circuit for capacitive load switching Csnub AM01504v1 AM17096v2 Figure 25. Gate charge test circuit Figure 26. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC Td(on) Tr(Ion) Ton AM01505v1 DocID025268 Rev 2 10% Td(off) Tf Toff AM01506v1 11/17 Package mechanical data 4 STGW28IH125DF, STGWT28IH125DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 27. TO-247 drawing 0075325_G 12/17 DocID025268 Rev 2 STGW28IH125DF, STGWT28IH125DF Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID025268 Rev 2 5.70 13/17 Package mechanical data STGW28IH125DF, STGWT28IH125DF Figure 28. TO-3P drawing 8045950_A 14/17 DocID025268 Rev 2 STGW28IH125DF, STGWT28IH125DF Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID025268 Rev 2 15/17 Revision history 5 STGW28IH125DF, STGWT28IH125DF Revision history Table 10. Document revision history Date Revision 20-Jan-2014 1 Initial release. 2 Document status promoted form preliminary to production data. Updated Table 2: Absolute maximum ratings, Table 4: Static characteristics, Table 5: Dynamic characteristics, Table 6: IGBT switching characteristics (inductive load) and Table 7: IGBT switching characteristics (capacitive load). Inserted Section 2.1: Electrical characteristics (curves). Minor text changes. 03-Feb-2014 16/17 Changes DocID025268 Rev 2 STGW28IH125DF, STGWT28IH125DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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