This is information on a product in full production.
February 2014 DocID025268 Rev 2 1/17
17
STGW28IH125DF
STGWT28IH125DF
1250 V, 30 A IH series
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Designed for soft commutation only
•Maximum junction temperature: T
J
= 175 °C
•Minimized tail current
•V
CE(sat)
= 2.0 V (typ.) @ I
C
= 25 A
•Tight parameters distribution
•Safe paralleling
•Low V
F
soft recovery co-packaged diode
•Low thermal resistance
•Lead free package
Applications
•Induction heating
•Microwave oven
•Resonant converters
Description
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
TO-247 TO-3P
1
23
1
2
3
TAB
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGW28IH125DF G28IH125DF TO-247 Tube
STGWT28IH125DF G28IH125DF TO-3P Tube
www.st.com
Contents STGW28IH125DF, STGWT28IH125DF
2/17 DocID025268 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID025268 Rev 2 3/17
STGW28IH125DF, STGWT28IH125DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 1250 V
I
C
Continuous collector current at T
C
= 25 °C 60 A
I
C
Continuous collector current at T
C
= 100 °C 30 A
I
CP(1)
1. Pulse width limited by maximum junction temperature.
Pulsed collector current 120 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 60 A
I
F
Continuous forward current at T
C
= 100 °C 30 A
I
FP(1)
Pulsed forward current 120 A
P
TOT
Total dissipation at T
C
= 25 °C 375 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.4 °C/W
R
thJC
Thermal resistance junction-case diode 1.47 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW28IH125DF, STGWT28IH125DF
4/17 DocID025268 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 1250 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 25 A 2 2.5
V
V
GE
= 15 V, I
C
= 25 A
T
J
= 125 °C 2.2
V
GE
= 15 V, I
C
= 25 A
T
J
= 175 °C 2.3
V
GE
= 15 V, I
C
= 50 A 2.65
V
F
Forward on-voltage
I
F
= 25 A 1.2 1.6
V
I
F
= 50 A 1.45
I
F
= 25 A T
J
= 125 °C 1.2
I
F
= 25 A T
J
= 175 °C 1.2
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 1250 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2035- pF
C
oes
Output capacitance - 139 - pF
C
res
Reverse transfer
capacitance -52-pF
Q
g
Total gate charge
V
CC
= 960 V, I
C
= 25 A,
V
GE
= 15 V, see Figure 25
-114-nC
Q
ge
Gate-emitter charge - 11 - nC
Q
gc
Gate-collector charge - 69 - nC
DocID025268 Rev 2 5/17
STGW28IH125DF, STGWT28IH125DF Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test condition s Min. Typ. Max. Unit
t
d(off)
Turn-off delay time V
CE
= 600 V, I
C
= 25 A,
R
G
= 10 Ω, V
GE
= 15 V, see
Figure 23
-128-ns
t
f
Current fall time - 82 - ns
E
off(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 0.72 - mJ
t
d(off)
Turn-off delay time V
CE
= 600 V, I
C
= 25 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 23
-132-ns
t
f
Current fall time - 190 - ns
E
off(1)
Turn-off switching losses - 1.53 - mJ
Table 7. IGBT switching characteristics (capacitive load)
Symbol Parameter Test condition s Min. Typ. Max. Unit
E
off(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses
V
CC
= 900 V, R
G
= 10 Ω,
I
C
= 50 A, L = 500 μH,
C
snub
= 330 nF, see
Figure 24
-230-
μJ
V
CC
= 900 V, R
G
= 10 Ω,
I
C
= 50 A, L = 500 μH,
C
snub
= 330 nF, T
J
= 175 °C,
see Figure 24
-520-
Electrical characteristics STGW28IH125DF, STGWT28IH125DF
6/17 DocID025268 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
Figure 4. Output characteristics (T
J
= 25°C) Figure 5. Output characteristics (T
J
= 175°C)
P
tot
100
00T
C
(°C)
(W)
100
200
50 150
300
V
GE
≥ 15V, T
J
≤ 175 °C
GIPG300120140946FSR
I
C
20
10
00T
C
(°C)
(A)
100
30
50
V
GE
≥ 15V, T
J
≤ 175 °C
150
40
50
60
GIPG300120140951FSR
I
C
20
0
01V
CE
(V)
(A)
4
40
23
V
GE
=15V
60
9V
11V
5
80
100 13V
GIPG300120140955FSR
I
C
20
0
01V
CE
(V)
(A)
4
40
23
V
GE
=15V
60
9V
11V
5
80
100 13V
7V
GIPG300120141005FSR
Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
V
CE(sat)
1.8
1.6
1.4
-50 T
J
(°C)
(V)
100
2
050
2.2
150
V
GE
= 15V
I
C
= 50A
I
C
= 25A
I
C
= 12.5A
2.8
2.6
2.4
3.2
3
GIPG300120141019FSR
V
CE(sat)
1.6
1.4
1.20I
C
(A)
(V)
30
1.8
10 20
2
40
2.2
V
GE
= 15V
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
50
2.4
2.6
2.8
3.0
GIPG300120141024FSR
DocID025268 Rev 2 7/17
STGW28IH125DF, STGWT28IH125DF Electrical characteristics
Figure 8. Forward bias safe operating area Figure 9. Transfer characteristics
C
= 25°C,
T ≤ 175 C; V
I
C
10
1
0.11V
CE
(V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, T
J
<= 175°C
V
GE
= 15V
100
1 μs
100
1000
GIPG300120141043FSR
I
C
20
06V
GE
(V)
(A)
10
8
40
T
J
=175°C
60
T
J
=25°C
V
CE
=10V
12
80
100
GIPG300120141054FSR
Figure 10. Diode V
F
vs. forward current Figure 11. Normalized V
GE(th)
vs junction
temperature
V
F
1.2
1.0
0.8
0.60I
F
(A)
(V)
20
T
J
= 175°C
40 60 80
T
J
= 25°C
T
J
= -40°C
100
2.0
1.8
1.6
1.4
2.4
2.2
GIPG300120141110FSR
V
GE(th)
1.1
1.0
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 1mA
V
CE
= V
GE
0.7
0.8
0.9
GIPD281020131600FSR
Figure 12. Normalized V
(BR)CES
vs. junction
temperature Figure 13. Capacitance variation
V
(BR)CES
1.08
1.0
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
GIPG300120141121FSR
C
1V
CE
(V)
(pF)
0.1 1 10
C
ies
10
100
C
oes
C
res
100
1000
GIPG300120141124FSR
Electrical characteristics STGW28IH125DF, STGWT28IH125DF
8/17 DocID025268 Rev 2
Figure 14. Gate charge vs. gate-emitter voltage Figure 15. Switching loss vs collector current
V
GE
8
0
Q
g
(nC)
(V)
020
I
C
= 25A
I
GE
= 1mA
V
CC
= 960V
4
40
12
60
16
80 100 120
GIPG300120141130FSR
E
OFF
0I
C
(A)
(μJ)
01020
500
30 40
1000
T
J
= 175 °C
1500
V
CC
= 600V, V
GE
= 15V,
R
G
= 10Ω
50
2000
2500
T
J
= 25 °C
GIPG300120141133FSR
Figure 16. Switching loss vs gate resistance Figure 17. Switching loss vs temperature
E
OFF
400 R
G
(Ω)
(μJ)
01020
600
800
1000
30 40
1200
V
CC
= 600 V, V
GE
= 15 V,
I
C
= 25 A
T
J
= 175 °C
T
J
= 25 °C
1400
1600
1800
2000
2200
GIPG300120141141FSR
600 T
J
(°C)
(μJ)
10 40 70
700
800
900
100 130
E
OFF
V
CC
= 600V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 25A
1000
160
1100
1200
1300
1400
1600
GIPG300120141158FSR
Figure 18. Switching loss vs collector-emitter
voltage Figure 19. Switching times vs. collector current
0V
CE
(V)
(μJ)
250 650
50
100
150
E
OFF
V
GE
= 15V,
R
G
= 10Ω, I
C
= 25A
200
250
450 850
T
J
= 175°C
T
J
= 25°C
GIPG300120141206FSR
t
I
C
(A)
(ns)
010 20
10 30
t
f
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, V
CC
= 600V
t
doff
100
40 50
GIPG300120141346FSR
DocID025268 Rev 2 9/17
STGW28IH125DF, STGWT28IH125DF Electrical characteristics
Figure 20. Switching times vs. gate resistance
t
R
G
(Ω)
(ns)
01020
10 30
t
f
T
J
= 175°C, V
GE
= 15V,
I
C
= 25A, V
CC
= 600V
40
100
t
doff
GIPG300120141353FSR
Electrical characteristics STGW28IH125DF, STGWT28IH125DF
10/17 DocID025268 Rev 2
Figure 21. Thermal impedance for IGBT
Figure 22. Thermal impedance for diode
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
tp
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
DocID025268 Rev 2 11/17
STGW28IH125DF, STGWT28IH125DF Test circuits
3 Test circuits
Figure 23. Test circuit for inductive load
switching Figure 24. Test circuit for capacitive load
switching
Figure 25. Gate charge test circuit Figure 26. Switching waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Package mechanical data STGW28IH125DF, STGWT28IH125DF
12/17 DocID025268 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 27. TO-2 47 drawing
0075325_G
DocID025268 Rev 2 13/17
STGW28IH125DF, STGWT28IH125DF Package mechanical data
Table 8. TO-2 47 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGW28IH125DF, STGWT28IH125DF
14/17 DocID025268 Rev 2
Figure 28. TO-3P drawin g
8045950_A
DocID025268 Rev 2 15/17
STGW28IH125DF, STGWT28IH125DF Package mechanical data
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Revision history STGW28IH125DF, STGWT28IH125DF
16/17 DocID025268 Rev 2
5 Revision history
Table 10. Document revision history
Date Revision Changes
20-Jan-2014 1 Initial release.
03-Feb-2014 2
Document status promoted form preliminary to production data.
Updated Table 2: Absolute maximum ratings, Table 4: Static
characteristics, Table 5: Dynamic characteristics, Table 6: IGBT
switching characteristics (inductive load) and Table 7: IGBT
switching characteristics (capacitive load).
Inserted Section 2.1: Elect rical cha racteristics (curves) .
Minor text changes.
DocID025268 Rev 2 17/17
STGW28IH125DF, STGWT28IH125DF
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