MOTOROU
SEMICONDUCTOR TECHNICAL DATA Order~le document
by2C3019HV/D
e
2C3019HV Chip
NPN Silicon
Small*ignaI Transistor
...deeigned for dc to VHF ampfifier applications and general+urpose switching.
.V(BR)CEO =80 Vdc
.hFE =100 Min @150 mAdc
.VCE(sat) =0.2 Vdc Ma @150 mAdc ~:,,,
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Rating Symbol Unit
Collector-EmitterVobge VCEO Vdc
Colleotor_e Volmge .,~
VCBO ,:, ‘U,,%,.,,$140
,.,/>+, v&
Emtier-eee VoWge VEBO ..,,,:,y,+,;,,i::,,
J.**.~..~,.,%.7.0 Vk
.~)3,,
e
ColleotorCurrent Ic \,> >,$i~1000 mAdc
PowerDieeiption @TA=25°C
Dereteshove25°C
StorageandJunctionTemwratureRange -65 to +200 ‘c
CharscterI*c ~f”f”~~$s Symbol Mln M= Unit
OFFCWRA~ERISTl* ,&*~~~$
CollWor+mMer Br*kdW~we* V(BR)CEO 80 Vdc
(ic =30Wdc) .*\:$f,,
,,.... *,
~*,,,?....
.,
Colldor+sae Br*~ Voltage V(BR)CBO 140 v&
(Ic *100@*~:~,,F
\V(BR)EBO 7.0 Vdc
1ICES 10 nA&
10 fi&
lE~ 10 M&
B
&
E
Physiml
Characteristics:
Die Size -
24x 26 roils
Die Thickness
7-11 roils
Bond Pad Sizw
Emitter 4.4x 6.2 roils
Base 4.7x 6.3 roils
Back Metal
20 ~Gold (Nom)
Top Metal
15@ Alum. (Nom)
Back Side =Collector
*Pulsed.PulseWdth 250toWOW, DutyCycle1.0to 2.OYO. (mntinued)
aRW O
91W
@M-ROLA
@Motorola, Im. 19W
2C3019HV
ELECTRICAL CHARACTERISTICS continu~ UA =25°C unless otherwise noted.)
Charectetiatlc S~bol IMin Max Unit
ON CHARA~ERISTICS
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
MOTORO~
2C3019HV
*,t\”$t +<? .$>
lt, **,:,, .,\, ~
M@orolar-w@*@kecWgm~bWfutiW noticetoanyproductsherein. Motoda makesnowarranty,representetionorguarsntee regarding
the su~tity of~~~ for any particular pu-, nor~Motorola assume any fiabi~i arfaing out of the ~ion or use of any wduct or ciuti,
mdWifl%_msMyWdlli*llW,l~ tilngwt~@Kmtitionyauetidoriti&*l~ag=. T@W-etemmnmd*vayindlflerent
. .
ap~i~low %~~~lng parameters, itiudng ~~d~ mustbevd~ted for each@omer @ication bycustomer’s techni~ experts. Motorola does
notconv~ sn~~ibnse utir bpatent tights northe rfghtsof others. Motorola products are notdesigned, intended, or authdzed for use as components in
s~twjw for surgi~ imdant Intothe ~, orother@Wione intended to suppoti or sustin Hfe,or for any other applbtion in which the fdlure of
the.~w ptiW could create askuation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
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-steal wk uchunmtendsd or unauthoflzed use,evenif suchclaim alleges that Motorolawas negtigent regardi~ the design or manufacture ofthe part.
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Llte@re Dfstrfbutfon &ntem
US~ Motorola Literature DistnMio~ P.O.Box2W12; Pknix, Atizona m.
EUROPE Motorola Ltd.; European Literature 0erttr3 SSTannersDrive, Blakefanda,MiRonKeynes, MK14 5BP,England.
JAPAN Mppon Motorola Ltd.;H2-1, Nishffio@ ShlnagswaAu, To~o 141, Japan.
ASIA PACIFIC Motorola Semicotictom H.K. Ltd.; Sil~ H*ur &nter, No. 2Dd King Streeg Td Po Industtid Estate,Td Po, N.T.,Hong Kong,
@M~ROLA
1PHW41011-2 PRINKD IN USA WW MPWPOD CPTO YDACAA 2CW19HVID -
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